In-Memory AM Demodulation Using an All-Silicon Independent-Dual-Gate Gain-Cell Memory with $<10^{-22}$ A Leakage Determined by Single-Electron Counting
Ultra-low-leakage memories are attracting increasing attention for in-memory sensing and computing. However, achieving sufficiently long retention in silicon memories for analog signal processing remains challenging because of leakage through the access transistor. In this work, we demonstrate an all-silicon independent-dual-gate memory whose leakage current, inferred from single-electron counting statistics, is below $10^{-22}$ A, giving a measured retention time exceeding 1000 s. Owing to the extremely low leakage, the subthreshold nonlinearity of the access transistor can be exploited without disturbing the stored charge, enabling in-memory amplitude-modulation (AM) demodulation. The proposed memory provides a CMOS-compatible platform for ultra-low-power signal processing and in-memory sensing.