arXiv subjects

Simone Raoux

Publications and source records attributed to Simone Raoux.

6 recordsLinked to original sources

arXiv2024

The Behavior of the Intercalant AlCl_4 Anion during the Formation of Graphite Intercalation Compound: An X-ray Absorption Fine Structure Study

This work aims to study the insertion of AlCl_4^- anion in the crystalline structure of oriented pyrolytic graphite (PG) at the point of view of the anion itself. The electronic and atomic structures of the anion at different intercalation stages are studied. In particular double-edge (bicolor) X-ray absorption spectroscopy at the Al and Cl K-edges is carried out, highlighting a contraction of the anion bonding at the highest intercalation degree obtained electrochemically (stage 3), while the electronic population changes for both the edges upon cycle.

cond-mat.mtrl-sci↗

arXiv2024

A Direct Real-Time Observation of Anion Intercalation in Graphite Process and Its Fully Reversibility by SAXS/WAXS Techniques

The process of anion intercalation in graphite and its reversibility plays a crucial role in the next generation energy-storage devices. Herein the reaction mechanism of the aluminum graphite dual ion cell by operando X-ray scattering from small angles to wide angles is investigated. The staging behavior of the graphite intercalation compound (GIC) formation, its phase transitions, and its reversible process are observed for the first time by directly measuring the repeated intercalation distance, along with the microporosity of the cathode graphite. The investigation demonstrates complete reversibility of the electrochemical intercalation process, alongside nano- and micro-structural reorganization of natural graphite induced by intercalation. This work represents a new insight into thermodynamic aspects taking place during intermediate phase transitions in the GIC formation.

cond-mat.mtrl-sci↗

arXiv2019

Spin memory of the topological material under strong disorder

Robustness to disorder - the defining property of any topological state - has been mostly tested in low-disorder translationally-invariant materials systems where the protecting underlying symmetry, such as time reversal, is preserved. The ultimate disorder limits to topological protection are still unknown, however, a number of theories predict that even in the amorphous state a quantized conductance might yet reemerge. Here we report a directly detected robust spin response in structurally disordered thin films of the topological material Sb2Te3 free of extrinsic magnetic dopants, which we controllably tune from a strong (amorphous) to a weak crystalline) disorder state. The magnetic signal onsets at a surprisingly high temperature (~ 200 K) and eventually ceases within the crystalline state. We demonstrate that in a strongly disordered state disorder-induced spin correlations dominate the transport of charge - they engender a spin memory phenomenon, generated by the nonequilibrium charge currents controlled by localized spins. The negative magnetoresistance (MR) in the extensive spin-memory phase space is isotropic. Within the crystalline state, it transitions into a positive MR corresponding to the weak antilocalization (WAL) quantum interference effect, with a 2D scaling characteristic of the topological state. Our findings demonstrate that these nonequilibrium currents set a disorder threshold to the topological state; they lay out a path to tunable spin-dependent charge transport and point to new possibilities of spin control by disorder engineering of topological materials

cond-mat.mtrl-sci↗

arXiv2019

Influence of the electrode nano/microstructure on the electrochemical properties of graphite in aluminum batteries

Herein we report on a detailed investigation of the irreversible capacity in the first cycle of pyrolytic graphite electrodes in aluminum batteries employing 1-ethyl-3-methylimidazolium chloride:aluminum trichloride (EMIMCl:AlCl3) as electrolyte. The reaction mechanism, involving the intercalation of AlCl4 in graphite, has been fully characterized by correlating the micro/nanostructural modification to the electrochemical performance. To achieve this aim a combination of X-ray diffraction (XRD), small angle X-ray scattering (SAXS) and computed tomography (CT) has been used. The reported results evidence that the irreversibility is caused by a very large decrease in the porosity, which consequently leads to microstructural changes resulting in the trapping of ions in the graphite. A powerful characterization methodology is established, which can also be applied more generally to carbon-based energy-related materials. Introduction

cond-mat.mtrl-sci↗

arXiv2013

Low-Damage High-Throughput Grazing-Angle Sputter Deposition on Graphene

Despite the prevalence of sputter deposition in the microelectronics industry, it has seen very limited applications for graphene electronics. In this letter, we report systematic investigation of the sputtering induced damages in graphene and identify the energetic sputtering gas neutrals as the primary cause of graphene disorder. We further demonstrate a grazing-incidence sputtering configuration that strongly suppresses fast neutral bombardment and retains graphene structure integrity, creating considerably lower damage than electron-beam evaporation. Such sputtering technique yields fully covered, smooth thin dielectric films, highlighting its potential for contact metals, gate oxides, and tunnel barriers fabrication in graphene device applications.

cond-mat.mes-hall↗

arXiv2010

Phase change memory technology

We survey the current state of phase change memory (PCM), a non-volatile solid-state memory technology built around the large electrical contrast between the highly-resistive amorphous and highly-conductive crystalline states in so-called phase change materials. PCM technology has made rapid progress in a short time, having passed older technologies in terms of both sophisticated demonstrations of scaling to small device dimensions, as well as integrated large-array demonstrators with impressive retention, endurance, performance and yield characteristics. We introduce the physics behind PCM technology, assess how its characteristics match up with various potential applications across the memory-storage hierarchy, and discuss its strengths including scalability and rapid switching speed. We then address challenges for the technology, including the design of PCM cells for low RESET current, the need to control device-to-device variability, and undesirable changes in the phase change material that can be induced by the fabrication procedure. We then turn to issues related to operation of PCM devices, including retention, device-to-device thermal crosstalk, endurance, and bias-polarity effects. Several factors that can be expected to enhance PCM in the future are addressed, including Multi-Level Cell technology for PCM (which offers higher density through the use of intermediate resistance states), the role of coding, and possible routes to an ultra-high density PCM technology.

cond-mat.mtrl-sci↗