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Stéphane Célérier

Publications and source records attributed to Stéphane Célérier.

2 recordsLinked to original sources

Nanoscale chemical engineering of Ti3C2Tx MXene multilayers through in situ electron beam irradiation in a TEM

Defect engineering in low-dimensional materials is a powerful approach to tailor their structure and chemistry at the atomic scale, with high relevance for tuning physical properties. Here, we apply this strategy to MXenes, one of the largest families of two-dimensional (2D) materials, and demonstrate the use of a highly focused scanning transmission electron microscope (STEM) beam for the structural and chemical nanoengineering of titanium carbide (Ti3C2Tx) multilayers. By adjusting the beam energy, electron dose, and scanning parameters, Ti3C2Tx multilayers were irradiated at 80 and 300 keV and characterized in situ using annular dark-field imaging and electron energy-loss spectroscopy (EELS). The irradiation induces gradual structural and chemical modifications, largely driven by the selective sputtering of atomic species and MXene layers. We identify irradiation conditions that selectively remove Cl or F surface terminations while largely preserving the Ti3C2 framework, whereas other conditions promote preferential carbon removal, in agreement with theoretical predictions. Most notably, electron irradiation drives the migration and accumulation of initially dilute nitrogen impurities within the irradiated regions, leading to the formation of nitrogen-rich titanium carbonitride (Ti3CyNzTx) nanodomains embedded in the Ti3C2Tx multilayers. These laterally patterned carbide/carbonitride architectures constitute in-plane MXene heterostructures with nanometer-scale spatial control. These results demonstrate that electron irradiation can be used to locally tailor MXene composition and create nanoscale architectures beyond those accessible through conventional chemical synthesis.

cond-mat.mtrl-sci↗

2D versus 3D-like electrical behavior of MXene thin films: insights from weak localization in the role of thickness, interflake coupling and defects

MXenes stand out from other 2D materials because they combine very good electrical conductivity with hydrophilicity, allowing cost-effective processing as thin films. Therefore, there is a high fundamental interest in unraveling the electronic transport mechanisms at stake in multilayers of the most conducting MXene, Ti$_3$C$_2$T$_x$. Although weak localization (WL) has been proposed as the dominating low-temperature (LT) transport mechanism in Ti$_3$C$_2$T$_x$ thin films, there have been few attempts to model it quantitatively. In this paper, the role of important structural parameters -- thickness, interflake coupling, defects -- on the dimensionality of the LT transport mechanisms in spin-coated Ti$_3$C$_2$T$_x$ thin films is investigated through LT and magnetic field dependent resistivity measurements. A dimensional crossover from 2D to 3D WL is clearly evidenced when the film thickness exceeds the dephasing length $l_ϕ$, which is in the $50-100\,\mathrm{nm}$ range. 2D WL can be restored by weakening the coupling between adjacent flakes, the intrinsic thickness of which is lower than $l_ϕ$, hence acting as parallel 2D conductors. Alternatively, $l_ϕ$ can be reduced down to the $10\,\mathrm{nm}$ range by defects. Our results clearly emphasize the ability of WL quantitative study to give deep insights in the physics of electron transport in MXene thin films.

cond-mat.mtrl-sci↗