arXiv subjects

Takase Shimizu

Publications and source records attributed to Takase Shimizu.

11 recordsLinked to original sources

arXiv2026

In-Memory AM Demodulation Using an All-Silicon Independent-Dual-Gate Gain-Cell Memory with $<10^{-22}$ A Leakage Determined by Single-Electron Counting

Ultra-low-leakage memories are attracting increasing attention for in-memory sensing and computing. However, achieving sufficiently long retention in silicon memories for analog signal processing remains challenging because of leakage through the access transistor. In this work, we demonstrate an all-silicon independent-dual-gate memory whose leakage current, inferred from single-electron counting statistics, is below $10^{-22}$ A, giving a measured retention time exceeding 1000 s. Owing to the extremely low leakage, the subthreshold nonlinearity of the access transistor can be exploited without disturbing the stored charge, enabling in-memory amplitude-modulation (AM) demodulation. The proposed memory provides a CMOS-compatible platform for ultra-low-power signal processing and in-memory sensing.

cond-mat.mes-hall↗

arXiv2026

Charge discreteness and the energy efficiency of information erasure in dynamic random-access memory cells

A dynamic random-access memory (DRAM) cell stores information as an integer number of electrons on a capacitor, and whether this discreteness is thermodynamically relevant depends on the competition between the charging energy and thermal fluctuations. This competition is quantified by the ratio $κ$ of the single-electron charging energy to the thermal energy, and here we investigate how $κ$ affects the energy efficiency of information erasure in a DRAM cell. Using a stochastic-thermodynamic model of a DRAM cell, we show that the nonquasistatic heat released during the discharge step is suppressed as $κ$ increases, whereas the quasistatic heat of the charge step approaches the Landauer cost. As a result, the energy efficiency increases monotonically with $κ$ and approaches the Landauer limit where the effect of charge discreteness is maximal and the cell is effectively reduced to two charge states. The parameter $κ$ thus connects two thermodynamic regimes: a multilevel single-well memory, whose nonequilibrium initial state prevents quasistatic erasure, and an effective two-level memory that can attain the Landauer limit. These results identify $κ$ as the parameter that controls the fundamental efficiency ceiling of transistor--capacitor memory circuits.

cond-mat.stat-mech↗

arXiv2026

Strong intervalley mixing between copropagating quantum Hall edge channels in a silicon MOSFET

Copropagating quantum Hall edge channels provide a promising platform for compact electron interferometry and flying quantum states. In silicon, the valley degree of freedom offers a natural alternative to spin-resolved edge channels because spin-flip scattering is strongly suppressed by the weak spin-orbit interaction. Here, we investigate interchannel transitions between copropagating valley edge channels in a double-layer-gated silicon metal-oxide-semiconductor field-effect transistor. With the bulk filling factor set to $ν=2$, two spin-polarized valley edge channels are brought into close proximity near a depleted side gate. We observe strong intervalley mixing, with a transition probability close to 1/2, indicating nearly complete equilibration between the two valley edge channels. In contrast, interchannel transport between edge channels with different spin orientations shows negligible transition probability, consistent with suppressed spin-flip scattering in silicon. These results demonstrate that intervalley coupling at a Si/SiO$_2$ interface can provide a beam-splitter-like operation for copropagating valley edge channels, establishing a key building block toward compact silicon quantum Hall interferometers.

cond-mat.mes-hall↗

arXiv2026

Heat-dissipation decomposition and free-energy generation in a non-equilibrium dot with multi-electron states

We experimentally demonstrate the decomposition of heat dissipation during free-energy generation in a nanometer-scale dot transitioning to a non-equilibrium steady state via single-electron counting statistics. An alternating-current signal driving a reservoir that injects multiple electrons into the dot makes it non-equilibrium, leading to free-energy generation, heat dissipation, and Shannon-entropy production. By analyzing the time-domain probability distributions of multi-electron states of the dot, we quantitatively decompose the heat dissipation into housekeeping and excess heats, thereby revealing their direct correlation with free-energy generation. This correlation suggests that the ratio of the generated free energy to the work applied to the dot, can potentially reach 0.5 under far-from-equilibrium conditions induced by a large signal, while an efficiency of 0.25 was experimentally achieved. These results establish a quantitative link between decomposed heat dissipation and free-energy generation in a multi-electron stochastic system, providing a thermodynamic framework for non-equilibrium electronic devices.

cond-mat.stat-mech↗

arXiv2026

Thermodynamic Constraints in Dynamic Random-Access Memory Cells: Experimental Verification of Energy Efficiency Limits in Information Erasure

We measured the energy efficiency of information erasure using silicon DRAM cells capable of counting charges on capacitors at the single-electron level. Our measurements revealed that the efficiency decreased as the erasure error probability decreased, and notably, the Landauer limit was not achieved even under effectively infinite-time bit erasure. By comparing the measured efficiency with the Landauer limit, we identified a thermodynamic constraint that prevents DRAM from reaching this limit: the inability to prepare the initial state in thermal equilibrium, which in turn prohibits quasistatic operations. This finding has broad implications for DRAM cells and for many electronic circuits sharing similar structures. Furthermore, it validates our experimental approach to discovering thermodynamic constraints that impose tighter, practically relevant limits, opening a new direction in information thermodynamics research.

cond-mat.stat-mech↗

arXiv2025

Scalable Parallel Single-Electron Pumps in Silicon with Split-Source Control in the Nanoampere Regime

Parallelizing single-electron pumps offers a promising route to achieving nanoampere-level currents crucial for quantum current standard applications. Achieving such current levels is essential for demonstrating the ultra-high accuracy of single-electron pumps below 0.1 ppm toward quantum metrology triangle experiments. In addition, improving the accuracy at this current range is also desirable for practical small-current measurements. However, nanoampere-level currents have not yet been achieved with parallel pumps, mainly due to challenges in optimizing operating conditions. Here, we propose a scalable and easily implementable parallelization method based on tunable-barrier single-electron pumps with split source electrodes. By tuning the source voltages, we successfully parallelize four single-electron pumps at 200 MHz and further demonstrate a current plateau exceeding 2 nA using three pumps at 2.1 GHz. The wide applicability of this parallelization technique opens a path toward advancing high-accuracy quantum current standards.

cond-mat.mes-hall↗

arXiv2024

Coherent electron splitting in interacting chiral edge channels

This paper theoretically studies the quantum coherence of an electronic state on an artificial chiral Tomonaga-Luttinger (TL) liquid. Coulomb interaction between copropagating integer quantum Hall edge channels causes the TL liquid nature of charge excitations, resulting in the splitting of an electronic state into bosonic eigenmodes. We investigate the single-electron coherence under the splitting process by calculating the Aharonov-Bohm (AB) oscillations in an electronic Mach-Zehnder interferometer employing copropagating spin-up and spin-down edge channels as the interference paths. We investigate the voltage bias dependence of the AB oscillations at zero temperature, taking the inter-channel interaction into account using the bosonization technique. The calculation results of the visibility and the phase of the AB oscillations show non-monotonical bias dependence when the copropagating channels are electrostatically asymmetric. These observations are interpreted as the signatures of the second-order interference between the fractionalized spin excitations with different phase evolutions. We also report finite entanglement entropy between the bosonic eigenmodes split from an electron, which presents an analogy between the `electron splitting' in a TL liquid and the Cooper-pair splitting at a superconducting junction.

cond-mat.mes-hall↗

arXiv2024

Mach-Zehnder interference of fractionalized electron-spin excitations

Inter-channel Coulomb interaction mixes charge excitations in copropagating quantum Hall edge channels, generating coupled excitation eigenmodes propagating at different speeds. This mode transformation causes an electron state to split into fragments, corresponding to the Tomonaga-Luttinger liquid model of a chiral one-dimensional electronic system. This paper reports the coherent evolution of an electron state under the fractionalization process in a Mach-Zehnder interferometer employing copropagating spin-up and spin-down channels as the interference paths. We observe the interference visibility oscillations as a function of the voltage bias applied between the interference paths, which are attributed to the second-order interference between the fractionalized spin excitations with different phase evolutions. This observation contrasts with the single-particle picture that predicts only the first-order interference, reflecting the phase evolution of a spin-up and spin-down superposition state during the one-way transport. The second-order interference manifests the coherent splitting of the superposition state to the mutually independent fast and slow excitations. Our observation offers the fractionalization process as a novel way to encode an electron spin state to spatially separated fragments.

cond-mat.mes-hall↗

arXiv2022

Fast time-domain current measurement for quantum dot charge sensing using a homemade cryogenic transimpedance amplifier

We developed a high-speed and low-noise time-domain current measurement scheme using a homemade GaAs high-electron-mobility-transistor-based cryogenic transimpedance amplifier (TIA). The scheme is versatile for broad cryogenic current measurements, including semiconductor spin-qubit readout, owing to the TIA's having low input impedance comparable to that of commercial room-temperature TIAs. The TIA has a broad frequency bandwidth and a low noise floor, with a trade-off between them governed by the feedback resistance $R_{FB}$. A lower $R_{FB}$ of 50 k$Ω$ enables high-speed current measurement with a -3dB cutoff frequency $f_{-3dB}$ = 28 MHz and noise-floor $NF = 8.5 \times 10^{-27}$ A$^{2}$/Hz, while a larger $R_{FB}$ of 400 k$Ω$ provides low-noise measurement with $NF = 1.0 \times 10^{-27}$ A$^{2}$/Hz and $f_{-3dB}$ = 4.5 MHz. Time-domain measurement of a 2-nA peak-to-peak square wave, which mimics the output of the standard spin-qubit readout technique via charge sensing, demonstrates a signal-to-noise ratio (SNR) of 12.7, with the time resolution of 48 ns, for $R_{FB}$ = 200 k$Ω$, which compares favorably with the best-reported values for the radio-frequency (RF) reflectometry technique. The time resolution can be further improved at the cost of the SNR (or vice versa) by using an even smaller (larger) $R_{FB}$, with a further reduction in the noise figure possible by limiting the frequency band with a low-pass filter. Our scheme is best suited for readout electronics for cryogenic sensors that require a high time resolution and current sensitivity and thus provides a solution for various fundamental research and industrial applications.

cond-mat.mes-hall↗

arXiv2022

Half-mirror for electrons on quantum Hall copropagating edge channels

A half-mirror that divides a spin-polarized electron into two parallel copropagating spin-resolved quantum Hall edge channels one half each is presented in this study. The partition process was coherent, as confirmed by observing the Aharonov-Bohm oscillation at a high visibility of up to 60% in a Mach-Zehnder interferometer, which comprised two such half-mirrors. The device characteristics were highly stable, making the device promising in the application of quantum information processing. The beam-splitting process is theoretically modelled, and the numerical simulation successfully reproduces the experimental observation. The partition of the electron accompanied by the spin rotation is explained by the angular momentum transfer from the orbital to the spin via spin-orbit interactions.

cond-mat.mes-hall↗

arXiv2020

Gate controlled unitary operation on flying spin qubits in quantum Hall edge states

Spin and orbital freedoms of electrons traveling on spin-resolved quantum Hall edge states (quantum Hall ferromagnets) are maximally entangled. The unitary operations on these two freedoms are hence equivalent, which means one can manipulate the spins with non-magnetic methods through the orbitals. If one takes the quantization axis of spins along the magnetization axis, the zenith angle is determined by the partition rate of spin-separated edges while the azimuth angle is defined as the phase difference between the edges. Utilizing these properties, we have realized electrically controlled unitary operation on the electron spins on the quantum Hall ferromagnets. The zenith angle of the spin was controlled through the radius of gyration at a corner by means of applying voltage to a thin gate placed at one edge. The subsequent rotation in the azimuth angle was controlled via the distance between the edge channels also by a gate voltage. The combination of the two operations constitutes the first systematic electric operation on spins in the quantum Hall edge channels.

cond-mat.mes-hall↗