arXiv subjects

Takashi Taniguchi

Publications and source records attributed to Takashi Taniguchi.

At least 181 records · Page 10Linked to original sources

arXiv2026

Cryogenic shock exfoliation for ultrahigh mobility rhombohedral graphite nanoelectronics

Rhombohedral multilayer graphene (RMG) offers a highly tunable platform for correlated electron physics, featuring field-effect control of magnetic, superconducting, and topological phases[1-24]. The promise of these materials has been held back by the limited abundance of rhombohedral stacking in natural graphite, which constrains both sample yield and useful area. Here we introduce 'cryogenic shock exfoliation' to produce large area rhombohedral graphene flakes which, combined with a low-pressure van der Waals assembly technique that preserves stacking order, enable highly uniform devices exceeding 1300 $μm^2$ with fabrication yields of 90%. Using scanning nanoSQUID-on-tip imaging, we demonstrate uniform spin magnetism over the full central 10 times 10 $μm^2$ area of our devices. Transverse magnetic focusing reveals a disorder mean free path exceeding 200 $μm$ at low temperatures. Within the flat surface bands of RMG[20], we observe a size-driven crossover from Poiseuille to porous electron flow in the intermediate-temperature regime of strong electron-electron hydrodynamics[16, 25], providing a further signature of ultrahigh device quality. Our approach overcomes a key materials bottleneck in the fabrication of mesoscopic rhombohedral graphene devices, paving the way for incorporating strongly correlated phases into two-dimensional nanoelectronics.

cond-mat.mes-hall↗

arXiv2026

Substrate-Mediated Persistent Photodoping in WSe2/hBN Field-Effect Transistors Enabled by Defect States in SiO2

Photodoping plays an important role in determining the optoelectronic response of two-dimensional semiconductor devices; however, the origin of the responsible trap states remains unclear. In this work, we investigate UV-induced photodoping in multilayer WSe2 field-effect transistors (FETs) based on WSe2/hBN heterostructures on SiO2/p-Si substrates. Wavelength-dependent measurements reveal pronounced n-type photodoping under 405 nm illumination, whereas the effect is orders of magnitude weaker under 640 nm excitation and for p-type photodoping. Furthermore, when the SiO2 layer is removed, both n-type and p-type photodoping are strongly suppressed, demonstrating that the oxide layer is essential for persistent photodoping. Analysis of defect-state distributions in amorphous SiO2, together with first-principles calculations for hBN defects, shows that the experimental observations cannot be explained by defects in hBN. Instead, the results indicate that defect states in the SiO2 substrate act as charge reservoirs that facilitate charge transfer and long-term carrier trapping. These findings highlight the dominant role of substrate-related trap states in UV-induced photodoping and photogating behavior in WSe2 FET devices.

cond-mat.mes-hall↗

arXiv2026

Emergent Trion Resonance Driven by Lattice Reconstruction in a Moiré Superlattice

We investigate how many-electron excited states emerge in twisted MoSe2 homobilayers when the lattice reconstructions evolve. Notably, we identify a new trion resonance that arises in the transition regime of lattice reconstruction, where gradual changes in atomic alignment between the layers occur. Magnetic field-dependent measurements, supported by first-principles calculations, indicate that the exciton forms at the K valley while the doped hole resides in the Gamma valley. First-principles calculations further indicate that two nearly degenerate exciton resonances can arise, localized at different sites within the moiré supercell. We propose that the new trion resonance is a "charge-transfer" trion, in which the electron-hole pair is spatially separated from the doped hole. The emergence of these complex excited states stems from the distinct moiré potentials acting on holes and excitons, resulting in their different spatial distribution within the superlattice.

cond-mat.mes-hall↗

arXiv2026

Twist-configured moire-moire reconstruction governs diverse commensurate double-moire phases in twisted bilayer graphene on h-BN

The coexistence of multiple moire lattices in van der Waals heterostructures raises a fundamental question: how do distinct moire patterns interact and reconstruct? Here, we investigate twisted bilayer graphene (tBG) on hexagonal boron nitride (h-BN), where tBG and graphene/h-BN moire structures coexist, using conductive atomic force microscopy combined with continuum-model simulations. We show that reconstruction between these moire lattices-moire-moire reconstruction-manifests across multiple length scales, giving rise to diverse commensurate double-moire phases. Locally, the stacking registry between the two moire lattices is uniquely selected by the global twist configuration (helical or alternate), mediated by rotational relaxation of the shared graphene layer. This registry, together with twist angle and strain, governs commensurate domains from C3z-symmetric to strained symmetry-modified structures. These results establish moire-moire reconstruction as a general framework for engineering structural and electronic order -- including theoretically predicted topological flat bands below the magic angle -- in multilayer moire materials.

cond-mat.mtrl-sci↗

arXiv2026

Bandwidth-Limited Critical Currents in Electrically Tunable Moiré Bands

Moiré superlattices host narrow minibands whose bandwidth governs correlated and topological phases. Here, we demonstrate that the bandwidth also sets the critical current for the onset of out-of-equilibrium transport. In bilayer graphene aligned to hexagonal boron nitride, we explore the high-current transport regime as we continuously flatten the valence miniband using an out-of-plane displacement field. We observe a significant reduction in the critical current, which is captured by a minimal analytical model and corresponds to the calculated narrowing of the miniband. Moreover, by comparing distinct moiré platforms, we show that the scaling between critical current and bandwidth is a universal feature of graphene superlattices. Our results reveal a direct link between miniband dispersion and high-current transport, and establish this regime as a fast and accessible electrical probe of bandwidth evolution.

cond-mat.mes-hall↗

arXiv2026

Tunable Extended Magnetic Non-Fermi Liquid in Graphene Moiré Heterostructures

Exploring exotic quantum metallic states beyond Landau's Fermi liquid theory remains a central focus in condensed matter physics. Such non-Fermi liquid behavior is mostly observed near quantum criticality, yet growing attention is directed toward extended NFL phases with intrinsic quantum fluctuations rooted in the extended ground state. While these extended NFL states have been previously reported only in a limited set of d- and f-electron systems, realizing a single, highly tunable platform capable of exhibiting multiple resistance exponent values is essential for uncovering the connection between the resistance exponent and the dominant quantum fluctuations coupled to quasiparticles. However, corresponding experimental progress remains elusive. Here, we report the observation of tunable extended non-Fermi liquid behavior in twisted double bilayer graphene encapsulated by aligned hBN layers. This NFL phase spans a broad range of carrier densities and exhibiting a carrier density dependent resistance exponent. Combined with temperature dependent resistance, magnetotransport and differential resistance measurements, these findings support a scenario where strong quantum fluctuations emerge from the interplay between localized and itinerant carriers. Our work establishes a highly tunable platform beyond conventional frameworks to investigate the organizing principles of non-Fermi liquid physics manifested in diverse behaviors.

cond-mat.mes-hall↗

arXiv2026

Orientation-tunable correlated Chern insulating states in chiral twisted double bilayer graphene proximitized by WSe2

Moire flat bands in graphene systems proximitized by transition-metal dichalcogenides (TMDCs) provide a setting where spin-orbit coupling (SOC) can reshape band topology. The crystallographic alignment angle twist angle between TMDC and graphene layers is predicted to tune the balance of Ising and Rashba SOC, but a combined theoretical and experimental understanding of how twist angle governs the topological character of correlated states has not been systematically established. Here we show that in chiral-stacked twisted double bilayer graphene in proximity to WSe2, twist angle between graphene and WSe2 determines the topological character of correlated Chern insulators. Continuum model calculations reveal that Ising spin-orbit coupling dominates at zero twist angle, giving rise to flat bands with finite valley Chern numbers, whereas Rashba coupling dominates at larger twist angle, resulting in topologically trivial bands. Transport measurements at quarter filling confirm this picture: twist angle = 0 deg devices exhibit C = +1 Chern insulators, consistent with spontaneous isospin polarization, whereas twist angle = 15 degree devices show C = 0 despite exhibiting similar correlated insulating behavior. The sharp contrast establishes crystallographic alignment as a new tuning knob, complementary to twist angle, displacement field, and carrier density, for engineering correlated topological states in van der Waals heterostructures.

cond-mat.mes-hall↗

arXiv2026

Magnetic-Free Quantum Interference and Universal Josephson Diode Effect Driven by a Supercurrent Gauge Field

The Josephson effect, a hallmark of superconducting phase coherence, drives modern quantum technologies. However, Josephson-based quantum interference has hitherto been tethered to magnetic fields, despite phase coherence being a quintessential, intrinsic trait of superconductivity. Moreover, the Josephson diode effect (JDE) is typically viewed as an anomalous phenomenon indicative of broken symmetries in exotic phases of matter. Here, in planar Josephson junctions made with $\mathrm{Bi}_2\mathrm{O}_2\mathrm{Se}$ and bilayer graphene, we demonstrate that the JDE is a missing universal property of the Josephson effect. Simultaneously, we present an all-electric technology that replaces magnetic flux for controlling and measuring supercurrent interference. Central to our approach is a supercurrent gauge field (SGF), generated and amplified through high-kinetic-inductance superconductors and novel device architectures. By establishing the physical equivalence between the SGF and a magnetic field, we eliminate the reliance on external fields in quantum interference and reveal a universal, field-free JDE mechanism with broad implications for detecting broken-symmetry states. Finally, we show that the SGF offers capabilities beyond those of a conventional magnetic field by experimentally demonstrating a magnetic-free, phase-sensitive technique to construct and characterize finite-momentum superconductivity, opening new frontiers for exploring novel phases of matter and superconducting quantum architectures.

cond-mat.supr-con↗

arXiv2026

Confined exciton polaron in MoS$_2$ on twisted-hBN

The simple electrostatic picture of a trion is that of an excess charge inducing an exciton polarization and binding closer (farther) to the hole (electron) side of it. Trion formation can be forbidden when such spontaneous rearrangement of charges is not allowed by the application of external perturbation, such as electric field. Here we test this hypothesis experimentally using a non-monotonic electric field. We realize this scenario by imprinting the ferroelectric domains at the AA-stacked twisted-hBN (t-hBN) interface onto a monolayer of MoS2 placed over it. The spatially varying in-plane electric field around the domain wall serves the dual purpose of (a) confining and polarizing the 2D exciton in the domain wall, and (b) depleting the free charge carriers from the domain wall. We observe a large quantized exciton splitting confirming strong exciton confinement in the domain wall. Forced by the confining potential, the electron side of the polarized exciton lies closer to the domain with accumulated free electrons, which should ideally prevent any trion formation. Contrary to the laid hypothesis, we observe signatures of quantized charged exciton emission, with an inter-level splitting that mimics the level-splitting of the quantized excitons. This paradox is explained using the many-body picture of exciton polaron, where a conduction band hole attractively binds the polarized exciton and the electron Fermi sea. The results provide a definitive way to unambiguously discern exciton polaron from trion.

cond-mat.mes-hall↗

arXiv2026

Moiré Phonons and Emergent Exciton-Phonon Coupling in a Moiré Heterobilayer

Moiré superlattices have emerged as a new platform for engineering electronic and optical properties in van der Waals heterostructures, enabling control over correlated and excitonic phenomena. Yet the impact of moiré superlattices on exciton-phonon coupling remains largely unexplored. Here we demonstrate emergent, layer-selective coupling between moiré phonons and moiré excitons in angle-aligned WS2/WSe2 heterobilayers. Using a broadband terahertz phonon transducer, we coherently launch moiré phonons that resonantly perturb the excitonic states. We show that the exciton-phonon coupling is intrinsically modified by the moiré superlattice in a layer-selective manner. A driven oscillator model captures the dynamics, revealing three moiré phonon resonances with distinct coupling to the moiré excitons. First principles calculations show that many moiré phonon modes can arise with distinct strongly hybridized in-plane and out-of-plane vibrations in the moiré unit cells. The calculations further identify the three experimentally observed moiré phonons and their emergent characteristic coupling to the moiré excitons.

cond-mat.mtrl-sci↗

arXiv2026

High-Performance Nanophononic Resonators in Self-Suspended WSe$_2$ Domes and Drums

Van der Waals materials are ideally suited for the implementation of high-frequency nanophononic resonators with atomically flat interfaces. Here, we present two versatile van der Waals-based nanophononic architectures: First, we introduce self-supporting nano-domes of WSe$_2$ as a scalable platform for the simultaneous generation of hundreds of high-quality nanoacoustic resonators with resonance frequencies in the 100 GHz range. Second, we engineer self-supporting nano-drums that reach record-high working frequencies for 2D-semiconductor transducers beyond 1 THz. Through optical pump-probe spectroscopy experiments and photoelastic linear chain model calculations, we gain a detailed understanding of the intricate interplay between phononic mode hybridization across heterostructures, the differences between modes close to the center and edge of the acoustic Brillouin zone, and the temporal structure of the photoelastic response. Both architectures have potential applications in low-cost nanoacoustic probing and the ultrafast modulation of quantum emitters in two-dimensional semiconductors. While nano-drums surpass the THz frequency barrier, nano-domes appear as an accessible, low-cost alternative for developing scalable nanophononic technologies.

cond-mat.mes-hall↗

arXiv2026

Band offsets and stability of WSe$_2$/RuCl$_3$ van der Waals charge-transfer contacts

The layered Mott insulator $α$-RuCl$_3$ induces degenerate hole-doping in two-dimensional semiconductors due to its large electron affinity, making it a promising charge-transfer material for establishing ohmic contacts in electronic devices. In order to assess the applicability and guide the design of devices incorporating RuCl$_3$ it is critical to determine the electronic structure and robustness of the band offsets that underpin the transport properties of semiconductors in contact with RuCl$_3$. Here, we apply micro-focused angle-resolved photoemission spectroscopy to determine the electronic structure of single-layer WSe$_2$ contacted to RuCl$_3$ on hexagonal boron nitride substrates. We find that formation of a functioning WSe$_2$/RuCl$_3$ contact leads to a valence band shift of $(0.68 \pm 0.05)$ eV towards the Fermi energy in WSe$_2$. The charge transfer effect is challenging to observe as it depends sensitively on fabrication conditions such as solvent exposure, quality of interface encapsulation and heating of RuCl$_3$, imposing strict requirements on device design to attain high-quality contacts.

cond-mat.mes-hall↗

arXiv2026

Enabling Electrical Readout of Néel vector reversal in a van der Waals Antiferromagnet

Owing to its robustness against external perturbations and intrinsically ultrafast dynamics, the Néel vector in antiferromagnets (AFMs) can enable the development of next-generation spintronic and magnonic devices for memory and computing applications. To realize AFM-based magnetic memory devices, one of the key requirements is to demonstrate electrical readout of 180-degree reversal of Néel vector in thin film AFMs, which remains critically missing. In this work, we report experimental demonstration of a novel transport methodology to detect Néel vector reversal in atomically thin films of a van der Waals (vdW) based A-type AFM. For this, we utilize spin-dependent electronic band properties of CrSBr by coupling it to a spin-polarized layer, separated by a tunnel barrier. In this configuration, the spin-dependent tunnelling magnetoresistance (MR) becomes sensitive to the relative orientation between the magnetization of the reference electrode and the interfacial sublattice magnetization of the AFM layer, in turn enabling electrical detection of the Néel vector orientation. Importantly, the observed MR can also reveal 180-degree reversal of Néel vector in even-layers of CrSBr, wherein adjacent sublattice magnetic layers are exactly compensated and the net magnetization vanishes and thus establishes a broadly applicable strategy for electrical detection of Néel vector in vdW-based AFMs.

cond-mat.mes-hall↗

arXiv2026

Local spectroscopy of anyons bound to charge traps

Fractional quantum Hall states host anyons, emergent quasiparticles with fractional charge and nontrivial exchange statistics. Controlling, trapping, and braiding anyons are central goals for both fundamental physics and topological quantum computation. A key step toward such control is understanding how anyons behave when confined in local potentials, where their internal structure can become relevant. Here, we use the scanning tunneling microscopy/spectroscopy (STM/STS) to study the excitation spectrum in integer and fractional quantum Hall states of monolayer graphene near individual charged impurities. In the integer quantum Hall states, the STS spectra show lifting of orbital degeneracy near defects, appearing as a band of discrete energy levels. In fractional states, (v=1/3 and 2/5), however, we observe an additional energy splitting of the lowest-energy spectral feature that occurs only when the chemical potential lies within a fractional gap and is absent in compressible or integer regimes. We attribute this to many-body configurations of anyons trapped by an impurity potential. Strikingly, numerical calculations show that the splitting requires an anisotropic confining potential, vanishing for a rotationally symmetric trap. The competing multi-anyon states carry nearly identical charge within the core of the potential but differ in how that charge is redistributed at larger radius. Our results establish local tunneling spectroscopy as a direct probe of anyon bound states, providing a key step toward understanding and controlling their behavior in confined geometries relevant for braiding and fusion.

cond-mat.mes-hall↗

arXiv2026

Real-space Imaging of Quantum Hall Quasiparticles

Quantum Hall systems host emergent quasiparticles with unusual charge, spin, and statistics, such as fractionally charged anyons. Although transport measurements have revealed many of their collective properties, identifying and visualizing individual quasiparticles remain elusive. Here we use scanning tunneling spectroscopy (STS) to image quantum Hall quasiparticles in graphene. Within incompressible quantum Hall states, we observe spatial variation of Landau level energies originating from electrostatic potentials created by charged defects in graphene and the underlying hexagonal boron nitride (hBN). For surface and near-surface defects, the Coulomb potential lifts the degeneracy of Landau orbitals, producing discrete energy splittings that reveal Landau orbital wavefunctions. In quantum Hall ferromagnetic states, quasiparticles bound to defect potentials produce distinct spatial and spectroscopic signatures that serve as hallmarks of the presence and number of localized excitations. In the fractional quantum Hall regime at one-third filling, our theoretical calculations predict discrete spectroscopic changes associated with the sequential addition of localized anyons, with a three-anyon bound state quantitatively reproducing our experimental data at $ν= 5/3$. These observations establish spectroscopic fingerprints of quantum Hall quasiparticles and provide a pathway toward imaging and manipulating individual anyons in real space.

cond-mat.mes-hall↗

arXiv2026

Layer-tunable Hubbard bands probed via moiré excitons in MoSe$_2$/WS$_2$ heterostructures

Moiré superlattices in transition metal dichalcogenide heterostructures provide a highly tunable platform for engineering strongly interacting states at the nanoscale. However, quantitatively determining and in-situ tuning of the underlying Hubbard parameters remains experimentally challenging. Here, we report electric-field-driven reordering of layer-specific Hubbard bands by performing optical spectroscopy on a dual-gated, 60°-aligned MoSe$_2$/WS$_2$ heterobilayer. Using two spatially distinct moiré excitons as local optical probes and tracking them as a function of carrier filling and vertical electric field, we quantitatively extract the layer-dependent on-site Coulomb repulsions, U$_M$~60 meV in MoSe$_2$ and U$_W$~30 meV in WS$_2$. Furthermore, we stabilize generalized Wigner crystal and stripe phases by electrostatically tuning the system to a type-II band alignment, shifting the ground state into the WS$_2$ layer where reduced on-site repulsion allows inter-site Coulomb interactions to dominate. Our results establish vertical electric fields as a deterministic tuning knob for layer-selective Hubbard physics, enabling device-level control of complex many-body phases.

cond-mat.mes-hall↗

arXiv2026

Hexagonal Boron Nitride Spin Defects for Quantum Photonics: Annealing-Free Generation by Krypton Ion Implantation

Controlled, reproducible generation of luminescent defect centres in hBN remains a key challenge for scalable quantum-photonic technologies. Here, we report Kr$^{+}$ ion implantation as a tunable, annealing-free, and chemically inert route to room-temperature near-infrared luminescent spin defects in hBN, requiring no pre- or post-implantation annealing. SRIM Monte Carlo simulations were used to optimise the parameters for 40 keV Kr$^{+}$ irradiation of hBN flakes. The implanted samples exhibit a stable near-infrared photoluminescence (PL) band centred at $\sim$830 nm whose intensity increases with implantation fluence over $10^{11}$-$10^{15}$ions/cm$^{2}$. Temperature-dependent PL measurements (20-300 K) reveal a linewidth broadening well described by a $T^{3}$ dependence, consistent with acoustic-phonon-mediated dephasing. Raman spectra show the characteristic $E_{2g}$ mode of pristine hBN at $\sim$1366 cm$^{-1}$ alongside an implantation-induced defect feature at $\sim$1295 cm$^{-1}$, confirming irradiation-induced lattice disorder. Electron paramagnetic resonance (EPR) measurements reveal a paramagnetic centre with a $g$-factor of 2.003, and density functional theory (DFT) calculations indicate that a spatially separated $V_{\mathrm{N}}$-$C_{\mathrm{B}}$ donor-acceptor pair complex is a viable origin of the observed optical and magnetic signatures. Overall, Kr$^{+}$ implantation offers an effective, annealing-free, and scalable platform for generating stable room-temperature luminescent defects, providing a promising route toward quantum photonics.

physics.optics↗

arXiv2026

Visualizing Symmetry Broken Chern Insulators and their Quantum Melting

In the presence of a magnetic field, electronic states of moiré quantum materials develop a Hofstadter spectrum that provides a unique setting for studying the interplay between band topology and strong electron-electron interaction. Using scanning tunneling microscopy, we study Hofstadter's states in bilayer graphene aligned with hexagonal BN and directly visualize the formation of interaction-driven symmetry breaking Chern insulators. Our measurements reveal the formation of phases that double, triple or quadruple the moiré unit cell at fractional filling of the Hofstadter bands, as well as states with complex intra-unit-cell wave functions. We visualize two distinct quantum phenomena in different Chern states, including quantum melting driven by the appearance and proliferation of topological defects, and a quantum transition co-occurring with phase competition and separation.

cond-mat.mes-hall↗