Search arXiv⌕ Search

arXiv subjects

Takashi Taniguchi

Publications and source records attributed to Takashi Taniguchi.

At least 37 records · Page 2Linked to original sources
arXiv2026

Nanoscale Mapping of Strain-engineered Excitons in Monolayer WSe$_2$

Excitons in monolayer transition metal dichalcogenides (TMDs) are highly sensitive to external stimuli, allowing control of resonance energies and lifetimes through electric and magnetic fields, heterostructures, moire potentials and mechanical strain. Observations of single-photon emission (SPE) near sample edges, wrinkles, and strained nanobubbles have motivated strain-engineering aimed at realizing localized emitters in 2D materials. The origin of these emitters remains unclear and prior studies have relied on far-field spectroscopy with strain profiles inferred separately through topography, limiting direct correlation between local strain and excitonic response. We directly probe strain-modified excitonic spectra in monolayer WSe$_2$ using cryogenic scattering-type scanning near-field optical microscopy (s-SNOM). We compare two strain-engineering techniques, nano-indentation and patterned substrates, used to produce SPEs. At 9 K, we spatially resolve exciton resonance shifts with sub-diffraction limit resolution, simultaneously measuring near-field optical response and topography. We observe that strain transferred from nano-indentation into a deformable polymer substrate differs from that produced by draping TMDs over patterned dielectric pillars. Adhesion and tearing during plastic deformation drive a compressive exciton blueshift, while draping produces dominant tensile strain. Comparing the strain model results to the experimentally observed energy shifts shows that the nano-indentation strain is over an order of magnitude smaller than previously inferred, due to puncturing of the fragile monolayer, whereas pillar-strained devices remain intact under more modest strain. These differences suggest SPE arises from complex, strain-mediated interactions rather than simple confinement potentials, establishing s-SNOM as a powerful probe of quantum emission in strained 2D materials.

cond-mat.mes-hall↗
arXiv2026

Graphene double quantum dot as a solid-state two-level system in the THz range

Matter-based two-level quantum systems are fundamental building blocks of quantum technologies, underpinning applications in quantum computing, simulation, communication, and sensing. Today, most of these two-level quantum systems, including Rydberg atoms, trapped ions, superconducting circuits, molecules, and quantum dots, involve transition frequencies in microwave or optical domains. However, extending their transition frequency to the THz spectral range could provide numerous benefits, leveraging the unique properties of THz radiation. Here, we show that an hBN-encapsulated graphene double quantum dot realizes a two-level system with a transition frequency in the THz spectral range. Using low-temperature transport spectroscopy in the dark combined with modeling based on nonequilibrium Green's function formalism, we demonstrate the formation of an artificial molecule, featuring bonding and antibonding states separated by an energy of up to 0.6 meV, corresponding to a resonance frequency of 0.145 THz. This approach provides direct access to important parameters of open double quantum dot systems, including tunneling rates, offering a practical alternative to conventional techniques such as photon-assisted tunneling, which are challenging to implement at THz frequencies. The realized 2D-material-based THz two-level system, compatible with direct on-chip integration, could serve as a key building block for future THz quantum technologies. Furthermore, by involving a single-electron transition, coupling these devices to a THz resonator could enable the exploration of ultra-strong light-matter interactions at the fundamental limit of a single transition coupled to a single cavity, beyond the reach of existing THz quantum systems based on collective transitions.

cond-mat.mes-hall↗
arXiv2026

Controlling the Atomic Reconstruction in Twisted MoSe$_2$/WSe$_2$ with a Monolayer hBN Spacer

Twisted van der Waals heterobilayers are a promising material platform for studying collective exciton many-body phenomena, but near-aligned structures often exhibit a local, anisotropic atomic reconstruction that compromises lateral homogeneity. The present study describes how atomic-scale rearrangement in adjacent regions of hBN-encapsulated, near-aligned MoSe$_2$/WSe$_2$ heterobilayers is controlled by the presence of a mono- or bilayer hBN spacer between the two monolayers. High-angle annular dark-field STEM directly resolves the atomic alignment in both layers and shows that the spacer suppresses the reconstruction and strongly increases the structural uniformity of the heterobilayers. 4D-STEM quantitatively maps local rotation, dilation, and heterostrain, revealing that the separated regions remain consistent with rigid moiré superlattice simulations, whereas without the spacer the structural parameters have two to three times broader distributions. By suppressing reconstruction, ultrathin hBN spacers therefore provide an effective route to enhance lattice homogeneity in MoSe$_2$/WSe$_2$ heterobilayers targeting collective excitonic and optoelectronic phenomena.

cond-mat.mes-hall↗
arXiv2026

Establishing the role of thickness in LaOBr; an alternative gate dielectric for vdW heterostructures

In electronic devices, the quality of the dielectric material is determined by figures of merit such as the band gap, leakage onset field, breakdown field and the number of built-in defects, which can all limit device performance. An additional and important metric to consider is the strength of the dielectric constant. Hexagonal boron nitride (hBN) is the benchmark gate dielectric for two-dimensional van der Waals heterostructures, owing to its wide bandgap, and atomically flat interface. At the same time, its dielectric constant (2--4) highlights the opportunity to explore alternative higher-permittivity van der Waals dielectrics that provide stronger electrostatic control. Previous work established lanthanum oxybromide (LaOBr), a layered dielectric with a predicted dielectric constant of 12.5, as a potential dielectric for van der Waals heterostructures. Using graphene field-effect devices with LaOBr, we show that the leakage-onset and breakdown fields decrease systematically with thickness. Dual-gate capacitance measurements combined with a dead-layer model reveal a bulk dielectric constant of $\varepsilon_{\mathrm{bulk}} = 12.2$, in agreement with theory, while interfacial dead-layers cause the effective dielectric constant to vary from 6 to 11 across multiple thicknesses. Benchmarked against established gate dielectrics, LaOBr combines breakdown fields comparable to hBN with dielectric constants 2 to 3 times larger. By establishing the operating regime of devices with various thicknesses, we further confirm the advantage of LaOBr over hBN for high-capacitance gate-dielectric operation. These results validate LaOBr as a promising dielectric for integration into two-dimensional heterostructures, and establish thickness-dependent benchmarking as essential for evaluating emerging layered dielectric materials.

cond-mat.mes-hall↗
arXiv2026

Fermi lune and non-reciprocal transport in rhombohedral multilayer graphene

We develop a microscopic theory of Fermi-lune metals in rhombohedral multilayer graphene and investigate their non-reciprocal longitudinal transport. We show that tuning the layer number and displacement field drives Lifshitz transitions from circular to annular non-interacting Fermi surfaces accompanied by redistributions of electronic weight among layers. Combining renormalization-group corrections with unrestricted Hartree-Fock calculations, we further demonstrate how Coulomb interactions reconstruct the non-interacting annular Fermi surface into crescent-shaped Fermi lune through spontaneous breaking of time-reversal, mirror and rotation symmetries. We determine competing mean-field phases for four to nine layers and distinguish two types of transdimensional orbital magnetic orders. Beyond the Fermi-lune state that exhibits transdimensional anomalous Hall effect reported recently, we also identify a mirror-preserving Fermi-lune phase with spontaneous in-plane orbital magnetization but a symmetry-forbidden anomalous Hall response. The maximum calculated in-plane orbital moment increases approximately linearly with layer number. The asymmetric Fermi-velocity distributions of these states also lead to intrinsic non-reciprocal longitudinal transport. Measurements presented here in a nine-layer device show a non-reciprocal resistance ratio reaching 23% at a current magnitude of 17 nA. These results elucidate the formation mechanism, competing symmetries, and thickness dependence of Fermi-lune states, and connect their electronic structure to a longitudinal-transport signature beyond the previously reported anomalous Hall phenomenology.

cond-mat.mes-hall↗
arXiv2026

Contrasting $Γ$- and K-Valley Moiré Physics in Twisted Monolayer/Bilayer WSe$_2$

Electronic orbital character plays a central role in determining electronic correlations, spin-orbit coupling, dimensionality, and ultimately the quantum phases of condensed-matter systems. Two-dimensional moiré materials have emerged as highly tunable platforms for exploring correlated phenomena, but the role of orbital degrees of freedom remains largely unexplored. Here, we identify twisted monolayer/bilayer WSe$_2$ as a platform in which displacement-field tuning enables moiré physics to be realized in both the $K$ and $Γ$ valleys. The distinct orbital characters of these valleys give rise to contrasting correlated phases at moiré filling factors $ν=1$ and $ν=1/3$. At $ν=1$, the $K$-valley state is a weak insulator, consistent with an antiferromagnetic state near a van Hove singularity in the intermediate-coupling regime, similar to that observed in twisted bilayer WSe$_2$. In contrast, the $Γ$-valley state exhibits a pronounced Pomeranchuk effect, consistent with proximity to a Mott transition. At $ν=1/3$, the $K$ valley hosts a robust generalized Wigner crystal, whereas the $Γ$-valley state lies near the crystallization boundary and again exhibits a Pomeranchuk effect, with localization enhanced by increasing temperature or magnetic field. Our work highlights the importance of orbital character in defining quantum phases in moiré systems, and identify the $Γ$ valley as a promising platform for exploring correlated phenomena near quantum phase transitions, where competing phases and enhanced fluctuations may give rise to unconventional phases.

cond-mat.mes-hall↗
arXiv2026

Displacement-Field-Induced Ionization of Defect States in High-Quality hBN

Encapsulation of two-dimensional (2D) materials with hexagonal boron nitride (hBN) is widely used to fabricate ultraclean van der Waals (vdW) heterostructures for optoelectronic and quantum transport studies. These devices are often operated under strong out-of-plane displacement fields that tune the electronic properties of the active 2D material, while the surrounding hBN is typically assumed to remain electronically inert. This assumption, however, neglects defect states that are present even in high-quality hBN crystals. Here, we probe their response to the applied displacement field using monolayer graphene encapsulated between hBN crystals as a sensitive charge sensor. Increasing the displacement field induces notable charge transfer between graphene and hBN, producing additional electron doping of 10-20x10^9 cm^(-2) even at the moderate displacement field (~0.5 V nm^(-1)), while simultaneously increasing carrier-density inhomogeneity of the graphene layer. Both effects are consistent with ionization of defect states within the hBN bandgap, with the bulk density ~1-7x10^(-5) nm^(-3) varying across different hBN crystals. Our results show that displacement-field-induced defect ionization in hBN can modify the electronic response of vdW heterostructures, with direct implications for device design and interpretation of experiments.

cond-mat.mes-hall↗
arXiv2026

Nonlocal Josephson coupling and current redistribution in a large-area graphene multiterminal Josephson junction

Multiterminal Josephson junctions (MTJJs) extend conventional two-terminal Josephson physics to devices defined by multiple superconducting phases, where rich phenomena have been predicted. However, in conventional MTJJs, superconducting transport is often dominated by local coupling between neighboring leads, obscuring physics that goes beyond simple connectivity. Here, we realize a multiterminal Josephson network in a graphene Hall bar geometry with micron-scale dimensions, enabling substantial nonlocal coupling between distant terminals. Our key observation is a pronounced negative differential longitudinal resistance (NDLR) in the four-probe response near switching currents, while no such feature appears in two-terminal measurements. We reproduce the NDLR response with a network containing the interplay between two distinct forms of nonlocality: nonlocal Josephson coupling, which determines the switching sequence of the superconducting network, and nonlocal normal-state conductance, which redistributes current after different regions switch. Our results highlight the potential of the emergent NDLR for characterizing superconductor--semiconductor hybrid systems and for nonlinear circuits. Further, this Josephson Hall bar geometry provides a platform for exploring the interplay between mesoscopic superconductivity and many-body ground states in graphene-based heterostructures.

cond-mat.mes-hall↗
arXiv2026

Twist-angle-dependent quantum phase diagrams in twisted bilayer MoTe2

Two-dimensional semiconducting moiré superlattices provide a highly tunable platform for investigating strongly correlated and topological quantum phases. As a prototypical example, twisted bilayer MoTe2 (tMoTe2) has been shown to host fractional topological phases at zero magnetic field. However, their evolution with twist angle and competition with other correlated quantum states remain largely unexplored. Here we report a systematic transport study of twist-angle-dependent phase diagrams in tMoTe2 across a range of 3.79°-5.76°, revealing an evolution from valley-polarized, fractional topological states to valley-degenerate correlated states and superconductivity. At relatively small twist angles, partially-filled Chern bands of tMoTe2 host fractional quantum anomalous Hall (FQAH) states following the Jain sequence, together with signatures of an anomalous composite Fermi liquid at moiré hole filling factor νh = 1/2. Increasing twist angle progressively suppresses fractional topological phases and reconstructs the half-filled Chern band into symmetry-breaking integer Chern insulating states. At νh = 1, we observe a transition from robust integer quantum anomalous Hall (IQAH) insulators at small angles to displacement-field-tuned, topologically trivial correlated insulators at larger angles. Remarkably, at twist angles above approximately 5.6°, superconductivity emerges adjacent to the νh = 1 correlated insulator, with a phase diagram closely resembling that recently reported in twisted bilayer WSe2. Our results uncover a unified twist-angle-driven phase evolution linking fractional topology, symmetry breaking, magnetic order, and superconductivity, providing new insight into the emergent quantum phenomena in moiré systems.

cond-mat.mes-hall↗
arXiv2026

Emergent Quantum Geometric Phases in Holey Graphene

In graphene and other two-dimensional materials, periodic modulations of the electron density can significantly alter the energy spectrum and transport properties. Here, we report magnetotransport measurements in encapsulated monolayer graphene with ultra-high-quality patterned periodic antidot lattices that preserve the intrinsic electronic properties of the material. This lithographically defined platform enables controlled access to commensurability and superlattice phenomena at length scales otherwise difficult to achieve. By systematically tuning the lattice dimensions, we reveal a hierarchy of classical commensurability features arising from cyclotron orbits with comparable radii that follow multiple classical trajectories, resulting in broadened resistance peaks beyond the conventional single-orbit picture. Superimposed on these features, we observe pronounced Brown-Zak oscillations arising from the quantum commensurability between the magnetic flux quantum and the unit cell of the engineered Bravais lattices. We demonstrate that the intrinsic geometric phase of our system is directly measurable and show a precise matching of the magnetic field periodicity to the lithographic periodic patterning, where moiré-like electronic spectra can be geometrically generated in single-layer graphene without the need for twist, lattice mismatch, or multilayer stacking. Our results establish nanopatterned graphene as a clean, tunable, and scalable platform for realizing and exploring moiré physics through on-demand real-space design

cond-mat.mes-hall↗
arXiv2026

Remote magnon sensing detects the universal phase stiffness jump in Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$

Phase stiffness governs macroscopic quantum coherence in superfluids and superconductors, providing a sensitive probe of condensate depletion, fluctuations, and phase transitions. However quantitative and spatially resolved measurements remain challenging. Here we report a contactless, local, all-optical measurement of superconducting phase stiffness using propagating antiferromagnetic magnons as remote sensors. In CrSBr, strong exciton-magnon coupling enables optical excitation and detection of magnon wavepackets and precise determination of their group velocity. When CrSBr is interfaced with underdoped Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$, we find that the magnon group velocity is substantially enhanced below the superconducting transition and quantitatively encodes the phase stiffness through Meissner screening currents. Using this capability, we identify a parallel-field-induced Berezinskii-Kosterlitz-Thouless transition through direct observation of the universal phase-stiffness jump, revealing a field-controlled route to expose intrinsic two-dimensional phase-ordering physics in a bulk cuprate. Our work establishes propagating magnons as local probes of superconducting electrodynamics and phase-coherent phenomena in low-dimensional quantum materials.

cond-mat.supr-con↗
arXiv2026

Ambipolar metal-insulator transition in bilayer MoSe2

When Coulomb interactions dominate kinetic energy, dilute two-dimensional carriers form a Wigner solid. Both its melting and disorder-driven localization can drive density-tuned metal-insulator transitions, but their relative roles and interplay have been debated for decades. Atomically thin semiconductors offer a new test because transport and scanning tunneling microscopy can probe the same material, yet poor contacts impede transport where correlations are strongest. Here we introduce contact-free radio-frequency reflectometry that senses sheet resistance through capacitive gate coupling. It resolves the electron and previously inaccessible hole transitions in the same bilayer MoSe2 device, whose carriers share disorder but not mass. Their critical densities differ fourfold yet correspond to comparable Coulomb-to-kinetic-energy ratios, where tunneling microscopy finds solid-liquid coexistence. Magnetoresistance peaks sharply at each transition, reflecting a Pomeranchuk-like, field-driven expansion of the Wigner solid against the correlated liquid. Our results demonstrate interaction-driven transitions in high-quality two-dimensional semiconductors, opening quantitative transport in contact-limited systems.

cond-mat.str-el↗
arXiv2026

Hidden valley dynamics behind vanishing circular polarization in moiré excitons

Optically addressable valley degrees of freedom in transition-metal dichalcogenide heterostructures provide a powerful platform for valleytronic and quantum-optical functionalities. In moiré superlattices, interlayer excitons inherit valley-contrasting optical selection rules while acquiring long lifetimes, electric dipoles, and site-dependent optical responses. However, because conventional measurements typically probe time-integrated valley polarization, the dynamical origin of vanishing polarization has remained elusive. Here, we show that a nearly zero steady-state valley polarization in electrically tunable moiré excitons does not necessarily indicate fast valley relaxation. Helicity-resolved time-resolved photoluminescence reveals a temporal crossing between co- and cross-circularly polarized emission, indicating that helicity-opposite dynamical components coexist and compensate after time integration. A minimal two-channel model, representing A-like and B-like moiré emission channels with opposite optical selection rules and distinct effective decay/depolarization rates, reproduces the observed helicity crossing without invoking a single rapid valley relaxation process. Furthermore, two-dimensional gate-field maps show that the crossing time evolves systematically with electrostatic tuning, demonstrating that the hidden valley dynamics are electrically controllable. These results show that time-integrated circular polarization can give a false-negative indication of valley polarization in multichannel valley emitters.

cond-mat.mes-hall↗
arXiv2026

Robust Diamond Quantum Sensing in Double-Quantum 4-Ramsey Interferometry by Dual-Feedback Scheme

We developed a highly sensitive and long-term stable diamond quantum magnetometer by integrating a dual-feedback system that compensates for common- and differential-mode frequency shifts in double-quantum (DQ) 4-Ramsey interferometry. Detecting extremely weak magnetic-field signals requires extensive signal accumulation to enhance the signal-to-noise ratio. However, deviations from the optimal operating frequencies caused by thermal drift or environmental magnetic noise severely hinder the long-term stability of such a sensing system. To overcome the limitation, we first derived analytical solutions for the signal response to common- and differential-mode detunings based on a detuning-inclusive Hamiltonian to theoretically clarify the robustness limit in DQ 4-Ramsey sensing. Guided by this theoretical model, we introduced synchronized frequency modulation and a dual-feedback scheme to independently track and compensate for these frequency shifts while maintaining an optimal magnetic-field response. The proposed method enabled stable continuous operation against temperature variations of 2.8 K. By maintaining a magnetic field sensitivity of 7.0 pT/Hz^1/2 in the frequency range of 5-100 Hz for a prolonged duration of 4 hours, we achieved an extremely low noise floor of 64 fT/Hz^1/2. During prolonged continuous sensing, the system exhibited the expected 1/T^1/2 scaling with integration time T, and prevented both the underestimation of amplitude and waveform distortion. These results establish a robust approach for long-term DQ 4-Ramsey diamond magnetometry and demonstrate its potential for detecting weak biomagnetic signals.

quant-ph↗
arXiv2026

Direct synthesis of moiré graphene with twist-tuned hybridization

Twisted van der Waals (vdW) systems provide a powerful platform for exploring emergent correlated phenomena, including superconductivity, magnetism, and topological phases. The twist angle offers a continuous tuning parameter for modifying the underlying Hamiltonian, however, precise and reproducible control remains challenging. Existing approaches are limited by single-use device architectures, restricted angular precision, or vertical probing geometries. Here we introduce a reconfigurable graphene-based moiré platform in which two independently fabricated layers are mechanically assembled and rotated in situ using a micro-electromechanical system (MEMS). Raman spectroscopy confirms the formation and robustness of the twist-induced moiré potential and enables continuous, deterministic control of the twist angle. The moiré potential folds the electronic band structure and activates the longitudinal optical (LO) phonon mode, allowing us to map its dispersion and directly visualize the moiré momentum. Angle-dependent electronic band hybridization is resolved through the evolution of the double-resonant 2D mode. Near \(0^\circ\), an emergent asymmetry of the \(Γ\)-point G-mode phonon reveals phonon band folding and hybridization driven by the moiré superlattice potential and interlayer relaxation. Our platform provides a reproducible Raman reference for twisted bilayer graphene while eliminating device-to-device variability. More broadly, it establishes the twist angle as a deterministically controllable parameter for systematic studies of correlated and topological phenomena in moiré quantum materials.

cond-mat.mes-hall↗
arXiv2026

Terahertz nanoscopy of quantum-geometric photovoltaics in bilayer graphene

The bulk photovoltaic effect (BPVE) provides a direct link between quantum geometry and nonlinear light-matter interactions, yet conventional far-field measurements cannot disentangle BPVE from contact- and interface-induced photothermoelectric signals. Here we develop cryogenic, polarization-sensitive terahertz microscopy with deep-subwavelength resolution and apply it to dual-gated AB bilayer graphene. Near resonance between the band gap and terahertz photon energy, we observe enhanced optical conductivity and spatially resolved BPVE. Polarization-dependent measurements reveal a characteristic twofold angular symmetry and a distinct shift-vector direction, both governed by crystalline symmetries and quantum geometry. The evolution of BPVE with carrier density and temperature provides a sensitive probe of the fine electronic structure of bilayer graphene, revealing signatures of trigonal warping and electron-hole asymmetry. Agreement with theory demonstrates that the terahertz nanoscopy of BPVE established here offers an optical lens into the interplay between band and quantum geometry in quantum materials.

cond-mat.mes-hall↗
arXiv2026

Orientational origin of nonlinear shear rheology in unentangled polymer melts

Universal rheological properties of unentangled polymer melts are investigated through the stretch-orientation decomposition of polymer dynamics. By externalizing stretch from the explicit state of each Rouse mode, we construct a constitutive model with orientational kinetics that preserves the Rouse relaxation spectrum. The resulting model yields the observed steady-shear scalings of the shear viscosity and first normal-stress coefficient, predicts a finite second normal-stress coefficient, and approximately reproduces the Cox-Merz and Gleissle-Osaki rules. The derived steady-oscillatory shear correspondence further identifies an elastic contribution, associated with the first normal stress difference, that is absent from the conventional Cox-Merz rule.

cond-mat.soft↗
arXiv2026

Symmetry Engineering Enables Deterministic Ensemble Polarization Control in Hexagonal Boron Nitride

Optical polarization is a key degree of freedom in quantum photonic and sensing technologies, enabling efficient light--matter coupling and directional emission. However, in defect ensemble-based quantum systems, orientational averaging across many defects suppresses optical anisotropy and eliminates a deterministic polarization axis. Here, symmetry engineering is introduced as a strategy to restore collective optical anisotropy in negatively charged boron vacancy (V_B^-) ensembles hosted in hexagonal boron nitride (h-BN). By imposing anisotropic in-plane tensile strain through lithographically defined nano-ridge arrays, in-plane symmetry is broken and the ensemble emission dipole is aligned with the ridge-defined strain symmetry axis. Polarization-resolved photoluminescence reveals that the polarization visibility scales with the magnitude of strain anisotropy, while the emission orientation rigidly follows the engineered symmetry axis across devices with varying strain direction. This deterministic alignment is independent of crystal orientation, establishing the optical foundation for polarization-defined ensemble spin readout and programmable photonic integration in two-dimensional quantum materials

cond-mat.mtrl-sci↗