arXiv subjects

Takashi Taniguchi

Publications and source records attributed to Takashi Taniguchi.

At least 361 records · Page 20Linked to original sources

arXiv2025

Chiral-helical junctions in screened graphene

Reproducibility and quantization in quantum spin Hall platforms is a persisting challenge, limiting their use in hybrid realizations of topological superconductivity. We report robust and reproducible quantized transport in a graphene quantum Hall topological insulator, stabilized at low magnetic fields by screening long-range Coulomb interactions with a metallic Bi$_2$Se$_3$ back gate. Beyond quantized resistance plateaus, we demonstrate mode-resolved control via gate-defined chiral-helical junctions that selectively transmit or backscatter a single helical channel, a capability inaccessible in time-reversal symmetric quantum spin Hall systems. Targeted experiments and simulations identify contact-induced doping, effectively creating unintended chiral-helical interfaces, as a generic mechanism for quantization breakdown, which is mitigated by large area contacts that enhance edge-channel equilibration. Our findings establish metal screened graphene as a gate-tunable, interaction-driven helical system with quantized transport, spatially separable helical channels, and compatibility with superconducting proximity for topological devices.

cond-mat.mes-hall↗

arXiv2025

Imaging Electron-Hole Asymmetry in the Quantum Melting of Generalized Wigner Crystals

Two-dimensional moiré materials provide a versatile platform to explore phase transitions in strongly correlated systems. Using scanning tunneling microscopy (STM) we have imaged the density-driven melting of generalized Wigner crystals (GWCs) and Mott insulators (MIs) in electron-doped, near-60° twisted MoSe2 bilayers featuring a triangular moiré superlattice. We observe striking electron-hole asymmetry in GWC melting: hole-doped GWCs yield interaction-driven disordered states whereas electron-doped GWCs melt into delocalized liquid-like states. This asymmetry arises from the broken particle-hole symmetry of the moiré superlattice, which produces electron and hole Fermi pockets with different momentum geometries upon GWC condensation. MI states melt without such asymmetry, consistent with the absence of a symmetry-breaking density modulation. This work provides direct visualization of the novel emergent phases that appear as GWCs undergo quantum melting transitions.

cond-mat.str-el↗

arXiv2025

Moiré-modulated $Γ$ valley in twisted bilayer and twisted double-bilayer MoTe$_2$

Twisted MoTe$_2$ hosts intriguing correlated quantum phenomena including the fractional quantum anomalous Hall effect in twisted bilayer (t-BL) MoTe$_2$ near 3.7$^\circ$, which is sensitive to the twist angle and moiré superlattices. Here, we directly visualize the twist-angle-modulated electronic structure of t-BL and twisted double-bilayer (t-DBL) near this critical angle. We find that the moiré superlattice not only modifies the relative energy between $Γ$ and K valleys in t-BL MoTe$_2$, but also strongly reconstructs the $Γ$ valley for both t-BL and t-DBL. Specifically, the deep $p_z$-derived band at $Γ$ exhibits a distinct splitting that systematically varies with increasing twist angle. Theoretical analysis suggests that this modulation arises from the twist-angle-dependent lattice relaxation, especially interfacial corrugations. Our work directly visualizes the moiré-modulated electronic structure and provides key spectroscopic information of lattice relaxation and interlayer interactions underlying the physics of twisted MoTe$_2$.

cond-mat.str-el↗

arXiv2025

High-Temperature Activation of Single-Photon Emitters in monolayer WS2

Controlled activation of defect-bound excitonic states in two-dimensional semiconductors provides a route to isolated quantum emitters and a sensitive probe of defect physics. Here we demonstrate that \textit{in situ} high-temperature annealing of hBN-encapsulated monolayer WS$_2$ on a suspended microheater leads to the emergence of spectrally isolated single-photon emitters at cryogenic temperatures. Annealing at temperatures around 1100 K produces a sharp emission line, $X_L$, red-shifted by approximately 80 meV from the neutral exciton and exhibiting a linewidth below 200 $μ$eV. Photoluminescence excitation spectroscopy and power-dependent measurements show that $X_L$ originates from annealing-induced defects in the WS$_2$ monolayer, while second-order photon correlation measurements reveal clear antibunching with $g^{(2)}(0)<0.5$. These results establish high-temperature \textit{in situ} annealing as a controlled means to access defect-bound excitonic states and single-photon emission in van der Waals materials.

cond-mat.mtrl-sci↗

arXiv2025

Time-resolved Charge Detection in Transition Metal Dichalcogenide Quantum Dots

We investigate electronic transport through gate-defined quantum dots in molybdenum disulfide MoS$_2$ using an integrated charge detector. We observe a crossover from two weakly coupled single dots to a strongly coupled double quantum dot. In the regime of extremely weak dot-lead coupling, where the direct transport current is below the detection limit, we measure the dot occupation via charge detection and access the few-electron regime. Due to the large band gap of MoS$_2$, tunneling rates can be sufficiently suppressed to resolve individual tunneling events. These results establish a platform for single-shot spin- and valley-to-charge conversion and highlight the potential of transition-metal dichalcogenide quantum dots for quantum information applications.

cond-mat.mes-hall↗

arXiv2025

Fast Interlayer Energy Transfer from the Lower Bandgap MoS2 to the Higher Bandgap WS2

Energy transfer (ET) is a dipole-dipole interaction, mediated by the virtual photon. Traditionally, ET happens from the higher (donor) to lower bandgap (acceptor) material. However, in some rare instances, ET can happen from the lower-to-higher bandgap material, depending on the strong overlap between the acceptor photoluminescence (PL) and the donor absorption spectra. In this work, we report an ET process from the lower bandgap MoS2 to the higher bandgap WS2, due to a near 'resonant' overlap between the MoS2 B and WS2 A excitonic levels. Changing the MoS2 bandgap from direct-to-indirect by increasing the layer number results in a reduced ET rate, evidenced by the quenching of the WS2 PL emission. Our work shows at 300 K, the ET timescale of ~33 fs is faster than the reported thermalization of the MoS2 excitonic intervalley scattering (K to K') time and competing with the ultrafast charge transfer timescale. Thus, allowing us to open a new direction in understanding the competing inter/intralayer processes.

cond-mat.mtrl-sci↗

arXiv2025

Nonreciprocal Transport with Quantum Geometric Origin in Layered Hybrid Perovskite

Quantum geometry quantifies how the electron wavefunction evolves distinctly from conventional transport theory. In noncentrosymmetric materials, nonreciprocal transport with quantum geometric origin remains prominent with localized charge independent of vanished group velocity. The discovery of such nonreciprocal and nonlinear responses was realized by recent advances in two-dimensional materials. As a promising candidate, the electronic structure and symmetry of layered hybrid perovskites can be deliberately designed and manipulated by incorporating selected organic ligands. Despite the observation of exotic photogalvanic effects and chiral optical effects, the underlying mechanism how these nonlinear responses are enabled in the multi-quantum well structures remained unclear. Here we demonstrated the quantum geometric origin for interlayer spontaneous photocurrent in (PEA)2PbI4. Contrary to assumptions that charge transport across the 2D planes is limited, we observed a spontaneous photocurrent along this crystalline orientation. Theoretical analysis using a tight-binding model identifies shift current as the microscopic origin. This quantum geometric effect is enabled by ionic displacements from centrosymmetric coordinates and enhanced by multiband transition high-density bands of the layered hybrid crystal. We anticipate that such unique low-dimensional systems with structure can provide fertile ground for discovering novel optoelectronic functionalities.

cond-mat.mtrl-sci↗

arXiv2025

Bilayer Excitons in the Laughlin Fractional Quantum Hall State

The Laughlin state embodies a universal class of fractional quantum Hall effects arising in two-dimensional electron systems subjected to strong perpendicular magnetic fields. Conventionally described by a single-component wavefunction, the Laughlin state features fractionally charged quasiparticles arising from correlations within one electron species. Here, we explore a novel physical situation by introducing inter-species Coulomb coupling between two intra-species Laughlin states in a quantum Hall graphene bilayer structure. Although quasiparticle excitations typically exhibit charge gaps of tens of Kelvin, we observe that this energy scale is significantly lowered through interlayer excitonic pairing between quasiparticles and quasiholes. Identified via transport measurements, these excitons belong to an unprecedented category of charge-neutral anyons, opening a new avenue for investigating exotic quantum statistics and phases of matter.

cond-mat.mes-hall↗

arXiv2025

van der Waals Nanoreactors

Advancing the chemical synthesis of crystals is important for both fundamental research and practical applications of quantum materials. While established bulk-phase and thin-film growth methods have enabled enormous progress, synthesizing single crystals suitable for quantum electronic discoveries remains challenging for many emerging materials. Here, we introduce van der Waals (vdW) stacks as nanochemical reactors for single-crystal synthesis and demonstrate their broad applicability in growing both elemental and compound crystals at the micrometer scale. By encapsulating atomically thin reactants that are stacked compactly with inert vdW layers such as hexagonal boron nitride (hBN), we achieve nanoconfined synthesis with the resulting crystals remaining encapsulated. As proof of concept, we synthesized isolated single crystals of elemental tellurium and distinct types of Pd-Te compounds. Structural characterization, including atomic-resolution scanning transmission electron microscopy, confirms the high crystalline quality of the products. We confirm the intrinsic semiconducting gap of tellurium and observe that non-stoichiometric PdTe1-x with a significantly reduced Te content (x ~ 0.18, a regime not previously achieved) retains uniform crystallinity and exhibits superconductivity below a critical temperature of 3.8 K. This nanochemical synthesis is broadly generalizable, chip-integrable, well-suited to a wide range of processing conditions, and compatible with nanofabrication routines for constructing devices. The concept of vdW nanoreactors offers a powerful and versatile pathway to expand the accessible landscape of quantum materials.

cond-mat.mtrl-sci↗

arXiv2025

Gate tuning of coupled electronic and structural phase transition in atomically thin Ta$_2$NiSe$_5$

Realizing an excitonic insulator phase from narrow-gap semiconductors remains challenging, as unambiguous experimental signatures are difficult to establish. Ta$_2$NiSe$_5$ has been widely regarded as a leading candidate, yet the nature of its phase transition and insulating state remains controversial. Here, we report a systematic Raman spectroscopy study of Ta$_2$NiSe$_5$ as a function of thickness and field-effect doping, complemented by electrical transport measurements. The phase transition persists down to the monolayer limit, with the critical temperature increasing as thickness decreases. In bilayer samples, both electron and hole doping suppress the insulating state, with electron doping lowering and hole doping raising the transition temperature. Importantly, the quasi-elastic scattering, previously attributed to excitonic fluctuations, evolves monotonically across the entire doping range, inconsistent with the expected suppression of excitonic correlations by Coulomb screening. These findings rule out a dominant excitonic mechanism and instead point to a coupled electronic and structural phase transition, whose stability is tunable by carrier doping. Our doping-based approach offers a general strategy for evaluating the role of excitonic effects in candidate excitonic insulators.

cond-mat.mtrl-sci↗

arXiv2025

Coherent and compact van der Waals transmon qubits

State-of-the-art superconducting qubits rely on a limited set of thin-film materials. Expanding their materials palette can improve performance, extend operating regimes, and introduce new functionalities, but conventional thin-film fabrication hinders systematic exploration of new material combinations. Van der Waals (vdW) materials offer a highly modular crystalline platform that facilitates such exploration while enabling gate-tunability, higher-temperature operation, and compact qubit geometries. Yet it remains unknown whether a fully vdW superconducting qubit can support quantum coherence and what mechanisms dominate loss at both low and elevated temperatures in such a device. Here we demonstrate quantum-coherent merged-element transmons made entirely from vdW Josephson junctions. These first-generation, fully crystalline qubits achieve microsecond lifetimes in an ultra-compact footprint without external shunt capacitors. Energy relaxation measurements, together with microwave characterization of vdW capacitors, point to dielectric loss as the dominant relaxation channel up to hundreds of millikelvin. These results establish vdW materials as a viable platform for compact superconducting quantum devices.

quant-ph↗

arXiv2025

Moire-Engineered Ferroelectric Transistors for Nearly Trap-free, Low-Power and Non-Volatile 2D Electronics

Long-range moire patterns in twisted WSe2 enable a built-in, moire-length-scale ferroelectric polarization that can be directly harnessed in electronic devices. Such a built-in ferroic landscape offers a compelling means to enable ultralow-voltage and non-volatile electronic functionality in two-dimensional materials; however, achieving stable polarization control without charge trapping has remained a persistent challenge. Here, we demonstrate a moire-engineered ferroelectric field-effect transistor (FeFET) utilizing twisted WSe2 bilayers that leverages atomically clean van der Waals interfaces to achieve efficient polarization-channel coupling and trap-suppressed, ultralow-voltage operation (subthreshold swing of 64 mV per decade). The device exhibits a stable non-volatile memory window of 0.10 V and high mobility, exceeding the performance of previously reported two-dimensional FeFET and matching that of advanced silicon-based devices. In addition, capacitance-voltage spectroscopy, corroborated by self-consistent Landau-Ginzburg-Devonshire modeling, indicates ultrafast ferroelectric switching (~0.5 microseconds). These results establish moire-engineered ferroelectricity as a practical and scalable route toward ultraclean, low-power, and non-volatile 2D electronics, bridging atomistic lattice engineering with functional device architectures for next-generation memory and logic technologies.

cond-mat.mtrl-sci↗

arXiv2025

Rewritable Complementary Nanoelectronics Enabled by Electron-Beam Programmable Ambipolar Doping

The ability to reversibly and site-selectively tune ambipolar doping in a single semiconductor is crucial for reconfigurable electronics beyond silicon, but remains highly challenging. Here, we present a rewritable architecture based on electron-beam programmable field-effect transistors (FETs). Using WSe$_2$ as a model system, we demonstrate electron-beam-induced doping that enables reversible, precisely controlled carrier modulation exceeding $10^{13}$ cm$^{-2}$. The in-situ writing, erasing, and rewriting of ambipolar doping of nanoscale patterns was directly visualized by scanning microwave impedance microscopy. This mask-free, lithography-compatible approach can achieve precise band engineering within individual channels, yielding near-ideal subthreshold swings (~ 60 mV/dec) and finely tunable threshold voltages for both carrier types without specialized contact engineering. These capabilities allow on-demand realization of high performance logic, including CMOS inverters with high voltage gains and low power consumption, as well as NAND-to-NOR transitions on the same device via direct polarity rewriting. Our platform offers a scalable and versatile route for rapid prototyping of complementary electronics.

cond-mat.mtrl-sci↗

arXiv2025

Angle evolution of the superconducting phase diagram in twisted bilayer WSe2

Recent observations of superconductivity in twisted bilayer WSe$_2$ have extended the family of moiré superconductors beyond twisted graphene. In WSe$_2$ two different twist angles were studied, 3.65° and 5.0°, and two seemingly distinct superconducting phase diagrams were reported, raising the question of whether the superconducting phases in the two devices share a similar origin. Here we address the question by experimentally mapping the evolution of the phase diagram across devices with twist angles spanning the range defined by the initial reports, and comparing the results to twist angle-dependent theory. We find that the superconducting state evolves smoothly with twist angle and at all twist angles is proximal to a Fermi surface reconstruction with, presumably, antiferromagnetic ordering, but is neither necessarily tied to the Van Hove singularity, nor to the half band insulator. Our results connect the previously distinct phase diagrams at 3.65° and 5°, and offer new insight into the origin of the superconductivity in this system and its evolution as the correlation strength increases. More broadly, the smooth phase diagram evolution, repeatability between different devices, and dynamic gate tunability within each device, establish twisted transition metal dichalcogenides as a unique platform for the study of correlated phases as the ratio of interaction strength to bandwidth is varied.

cond-mat.mes-hall↗

arXiv2025

From fractional Chern insulators to topological electronic crystals in moiré MoTe2: quantum geometry tuning via remote layer

The quantum geometry of Bloch wavefunctions,encoded in the Berry curvature and quantum metric, is believed to be a decisive ingredient in stabilizing fractional quantum anomalous Hall (FQAH) effect(i.e., fractional Chern insulator, FCI, at zero magnetic field), against competing symmetry-breaking phases.A direct experimental demonstration of quantum geometry-driven switching between distinct correlated topological phases, however, has been lacking. Here, we report experimental evidence of such a switch in a high-quality 3.7 twisted MoTe2 (tMoTe2) device consisting of both A-A bilayer and A-AB trilayer regions. While composite Fermi liquid CFL/FQAH phases are established in A-A tMoTe2,the A-AB region-effectively an A-A moire bilayer proximitized by a remote B layer-develops a series of topological electronic crystal (TEC, also referred to as generalized QAH crystal, QAHC) states with integer quantized Hall conductance at commensurate fractional fillings v=1/2, 2/3, and an incommensurate filling factor v=0.53.The electrostatic phase diagram is mapped out by combined transport and optical measurements, showing that these TEC states emerge within the first moir'e valence band prior to any charge transfer to the B layer. Exact diagonalization (ED) incorporating the remote-layer-induced intralayer potential demonstrates a transition from a CFL-like manifold in the A-A limit to a Chern number C=1 ground-state consistent with a TEC at v=1/2 , accompanied by the further breakdown of ideal band geometry. Our results provide experimental evidence of quantum geometry-tuned competition between FQAH/CFL and TEC phases in a moiré Chern band and pave the way for further exploring correlation-driven topological phenomena by tuning quantum geometry.

cond-mat.mes-hall↗

arXiv2025

Spin-flop driven interfacial tunneling magnetoresistance in an antiferromagnetic tunnel junction

The utilization of two-dimensional (2D) materials in magnetic tunnel junctions (MTJs) has shown excellent performance and rich physics. As for 2D antiferromagnets, the magnetic moments in different layers respond asynchronously and can be configured at various states under different magnetic fields, showing the possibility of efficient magnetic and electrical tunability. In this report, A-type antiferromagnetic (AFM) material (Fe0.5Co0.5)5GeTe2 (FCGT) works as electrodes to realize full van der Waals magnetic tunnel junctions. Owing to the interfacial effect, the even-layer FCGT, although with zero net magnetization, exhibits spin selectivity in MTJ architecture contributing to a tunneling magnetoresistance (TMR) reaching about 25% at a low operating current 1 nA at 100 K and persists near room temperature. Due to the surface spin-flop (SSF) effect in antiferromagnetic FCGT, the alternation flexibility between the volatile and nonvolatile memory behavior is achieved. The interfacial TMR can be tuned efficiently in amplitude and even sign under different bias currents and temperatures. These findings show precise magnetoelectric manipulation in MTJs based on 2D antiferromagnets and highlight the promise of 2D antiferromagnets for spintronic devices.

cond-mat.mes-hall↗

arXiv2025

Configurable antiferromagnetic domains and lateral exchange bias in atomically thin CrPS4

Interfacial exchange coupling between antiferromagnets (AFMs) and ferromagnets (FMs) crucially makes it possible to shift the FM hysteresis, known as exchange bias, and to switch AFM states. Two-dimensional magnets unlock opportunities to combine AFM and FM materials; however, the buried AFM-FM interfaces obtained by stacking remains challenging to understand. Here we demonstrate interfacial control via intralayer exchange coupling in the layered AFM CrPS$_4$, where connected even and odd layers realize pristine lateral interfaces between AFM-like and FM-like regions. We distinguish antiphase even-layer states by scanning nitrogen-vacancy centre (NV) magnetometry due to a weak surface magnetization. This surface magnetization enables control over the even-layer state, with different regions switching at distinct fields due to their own lateral couplings. We toggle three AFM domains adjacent to a FM-like region and demonstrate a tunable multilevel exchange bias. Our nanoscale visualization unveils the microscopic origins of exchange bias and advances single two-dimensional crystals for hybrid AFM-FM technologies.

cond-mat.mes-hall↗

arXiv2025

Precise Twist Angle Determination in twisted WSe2 via Optical Moiré Phonons

Twisted bilayers of transition metal dichalcogenides (TMDC) form moiré superlattices resulting in moiré minibands in momentum space and hosting localized excitons in real space. While moiré superlattices provide access to Mott-Hubbard physics, their energy potential landscape and electronic correlations are highly sensitive to fluctuations of the twist angle, disorder and lattice reconstructions. However, fast and non-invasive experimental access to local twist angle and its spatial variations is challenging. Here, we systematically correlate twist angle variations of twisted WSe2 bilayers across micrometer length scales using a combined lateral force microscopy (LFM) and a micro- Raman spectroscopy approach. These measurements uncover lateral variations in the twist angle by more than 1° across length scales relevant to optical and transport measurements. We demonstrate that twist angles in the range of 3° < $α$ < 12° show distinct Raman response from scattering on optical moiré phonons allowing twist angle determination with high precision and sub-micrometer spatial resolution under ambient conditions. These modes are particularly sensitive in the low-angle twist regime, predicted to host emergent quantum phases. Our results establish micro-Raman spectroscopy of optical moiré phonons as a rapid, non-invasive probe to determine twist angle and to screen local twist angle variations with a precision better than $\pm$ 0.3° and a lateral resolution below one micrometer. This methodology is also applicable to fully hBN-encapsulated heterostructures.

cond-mat.mtrl-sci↗