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Takashi Taniguchi

Publications and source records attributed to Takashi Taniguchi.

At least 91 records · Page 5Linked to original sources
arXiv2026

Non-universal localization transition in the quantum Hall effect probed through broken-symmetry states of graphene

The quantum Hall effect hosts quantum phase transitions in which the localization length, that is the size of disorder-induced bulk localized states, is governed by universal scaling from percolation theory. However, this universal character is not systematically observed in experiments, including very recent ones in extremely clean devices. Here we explore this non-universality by systematically measuring the localization length in broken-symmetry quantum Hall states of graphene. Depending on the nature and gap size of these states, we observe differences of up to a tenfold in the minimum localization length, accompanied by clear deviations from universal scaling. Our results, as well as the previously observed non-universality, are fully captured by a simple picture based on the co-existence of localized states from two successive sub-Landau levels.

cond-mat.mes-hall↗
arXiv2026

A substrate booster for P-type 2D ferromagnetic semiconductor

Spin transistors with its both charge and spin properties tuned via electrostatic gating are believed capable for widespread use, which however have proven challenging due to the extreme rareness of their physical base -- magnetic semiconductors. The latter are limited within very few systems including diluted magnetic semiconductors (DMS) and two-dimensional ferromagnetic semiconductors (2D-FMS), and known to suffer from inadequate gate-tunability of their electric and/or magnetic properties. Here, we show a substrate engineering paradigm by interfacing few-layered Cr$_{2}$Ge$_{2}$Te$_{6}$ (FL-CGT) with an antiferromagnetic insulator CrOCl. Owing to the subtle interfacial charge transfer couplings, CGT can be drastically turned from an ambipolar semiconductor into a high performance P-type semiconductor. When cooled below the Curie temperature, the ON-OFF ratio in such substrate-boosted FMS field-effect transistor (FET) reaches 10$^{5}$ with its coercive field $H_{c}$ of magnetic hysteresis loop tunable by a factor of more than 200$\%$, enabling {gate-assisted magnetic switching in the prototype semiconducting spin transistor architecture}. A crossover from critical power-law scaling to a dual power-law behaviour under heavy hole doping was further observed. Our findings {signify} an efficient interfacial charge transfer and electrically modulated magnetic anisotropy energy supported by calculations. This high performance P-type FMS-FET system suggests that active substrate-boosting paradigm might be a powerful path for the investigation of future gate-tunable spintronic devices.

cond-mat.mes-hall↗
arXiv2026

Hilbert-space selected switch of helical edges in an artificial quantum Hall insulator

Quantum Hall effects (QHE) host one-dimensional topologically-protected edge channels, which can serve as an essential ingredient in exotic quantum electronic systems. Yet the manual reconstruction of Landau-level topology, by electrostatic confinement or symmetry breaking, remains experimentally challenging. Here, we show that interfacial charge transfer in between CrOCl and large-angle twisted bilayer graphene offsets the two otherwise decoupled Dirac Landau-level ladders in each graphene layer, creating a new sequence of composite filling configurations. At charge neutrality, the composited $(+2,-2)$ state involves only the zeroth Landau levels and becomes fully insulating, with longitudinal resistance reaching the G$Ω$ regime. By contrast, higher composite zero-filling quantum Hall states, including $(+6,-6)$ and $(+10,-10)$, retain counter-propagating helical edge channels and exhibit pronounced non-local transport, reaching up to $50\%$ of the local response. We attribute such switching-behavior to the Landau-spinor Hilbert space -- as the filling is reduced from $(+6,-6)$ to $(+2,-2)$, the orthogonal $N=\pm1$ orbital components are removed, eliminating the edge-compatible channel and gapping both bulk and boundary transport. The interaction nature of the observed gapped sates was further examined both experimentally and theoretically. Our results suggest that charge transfer provides a direct route to engineer artificial quantum Hall insulators, opening possibilities for wavefunction-selective control of helical edge modes.

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arXiv2026

Real-space Visualization of Emergent Electron Crystals in Rhombohedral Graphene

Strongly interacting electrons can spontaneously break spatial symmetries to form electron crystals, exemplified by the Wigner crystal. Recent studies of topological flat bands in rhombohedral graphene have suggested more exotic forms of crystallization, including anomalous Hall crystals that entangle charge order with nontrivial topology and metallic electron crystals in which localized and itinerant carriers coexist. Direct real-space observation of these states, however, has remained elusive. Here we use scanning tunneling microscopy and spectroscopy to visualize emergent electron crystals in rhombohedral hexalayer graphene. At low electric fields and over a finite range of hole doping, we observe electronic lattice patterns that evolve from honeycomb to oblique order through a first-order quantum phase transition with increasing hole density. The Fermi surface extracted from quasiparticle-interference measurements lacks the geometry needed to account for these patterns through conventional nesting. Together with metallic transport and a crystal-site density much lower than the doped carrier density, this supports metallic electron crystals in which a subset of carriers crystallizes. The honeycomb crystal occupies the same phase space as the multiferroic orbital magnetism observed previously in transport and exhibits domain stabilization by a small magnetic field, which may suggest a possible metallic anomalous Hall crystal. With increasing magnetic field, the oblique phase develops a $\sqrt{2}\times\sqrt{2}$ reconstruction with a crystal-sublattice energy splitting that increases linearly with field, corresponding to a $g$-factor of 16. This may reflect an orbital-antiferromagnetic electron crystal with alternating orbital magnetization across the lattice. These results establish a new paradigm of electron crystallization in which charge order is intertwined with orbital magnetism.

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arXiv2026

Facile hBN-hBN Interfacial Overlap Engineering for Enhanced Quantum Emitter Formation

Quantum emitters in two-dimensional materials, particularly hBN, are promising platforms for quantum technologies. However, achieving high-density emitters at predetermined locations while preserving optical quality remains challenging. Here, we introduce a facile, cost-effective double-layer all-dry transfer approach to deterministically create overlap regions between hBN flakes. These pre-defined capped regions exhibit a significantly enhanced emitter density, with up to a 15-fold increase compared to uncapped areas. Importantly, this method does not compromise emitter quality: emitters within overlap regions demonstrate excellent optical performance, including high signal-to-background and signal-to-noise ratios, large Debye-Waller factors, high brightness, and strong spectral stability. Possible defect configurations are also discussed to contextualize the observed emission characteristics. This scalable strategy enables preferential formation of quantum emitters in targeted regions, achieving higher densities than simple treatments such as plasma irradiation while avoiding the complexity of advanced fabrication techniques. The approach provides a practical pathway for integrating high-quality quantum emitters into scalable quantum photonic platforms.

cond-mat.mtrl-sci↗
arXiv2026

Dimensional Control of Excitonic Interactions in Exfoliated 2D Molecular Crystals

Two-dimensional (2D) materials provide unique opportunities to tailor excited-state properties through reduced dimensionality, altered dielectric screening and layer-dependent structural reconstruction. While such effects have been widely explored in norganic systems, their realization in molecular crystals has been limited by the difficulty of controlling thickness at the atomic scale while preserving crystalline order. Here we show that tetracene and three other molecular crystals can be mechanically exfoliated into mono-, few- or multilayer flakes, while retaining crystalline order. This capability enables new studies of molecular crystals across a well defined thickness range within the same structural organization. Thickness-dependent spectra of these samples reveal how out-of-plane confinement modifies the excited-state energy landscape of tetracene: With decreasing thickness, the Davydov splitting diminishes, the Stokes shift increases, and signatures of more delocalized excitons emerge. Electron diffraction and exciton model-based analyses correlate these trends to changes in molecular packing, intermolecular coupling and dielectric screening. Our results also demonstrate that key features of molecular excitons can be systematically tuned by layer number, extending dimensional control from inorganic 2D materials to molecular crystals.

cond-mat.mtrl-sci↗
arXiv2026

Quantum Phase Transitions and Fractional Quantized Anomalous Hall Insulators in Rhombohedral Graphene

Fractional quantum anomalous Hall effect (FQAHE) has been discovered in twisted MoTe$_2$ and rhombohedral graphene/hBN moiré superlattices. Such van der Waals heterostructures feature a tuning knob of gate displacement field $D$, which is absent from the conventional fractional quantum Hall systems in two-dimensional electron gases. $D$ plays a critical role in engineering FQAHE and other emergent quantum states and provides an exciting new opportunity to explore their quantum phase transitions. However, the microscopic details of such transitions and temperature-dependent transport have remained mostly elusive. Here we report systematic resistance measurements in rhombohedral pentalayer graphene/hBN moiré superlattices. We found that the displacement field-driven phase transitions between Composite Fermi liquid, Fermi liquid, Fractional Chern insulators, and insulating states are described by semi-circle relations of the longitudinal and transverse resistivities (or conductivities), largely unexplored in the fractional quantum Hall systems. This agrees with a spatially separated two-phase picture for the phase transitions and further indicates a new insulator phase--fractional quantized anomalous Hall insulator. By comparing the temperature-dependence of longitudinal resistance with the thermal activation model, we estimated the transport gap sizes in three fractional Chern insulator states. Our work shed light on the quantum and temperature evolutions of fractional Chern insulator states--providing necessary background for anyon-braiding and gate-defined junctions in rhombohedral graphene.

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arXiv2026

Excitons probe intrinsic flat band Mottness in a van der Waals heterostructure

Excitons provide a sensitive optical probe of electronic correlations in nearby two-dimensional materials, yet their coupling to intrinsic flat-band Mott systems remains largely unexplored. Here we combine gate-tunable optical spectroscopy with first-principles calculations to study monolayer WSe$_2$ in direct contact with the van der Waals Mott insulator Nb$_3$Cl$_8$. The gate evolution of WSe$_2$ excitonic resonances reveals signatures of a correlation-reconstructed Mott gap in Nb$_3$Cl$_8$ that is absent from the single-particle band picture. In the electron-doped regime, the WSe$_2$ 2s Rydberg exciton undergoes a multistage evolution and develops into interlayer attractive and repulsive polaron branches, showing that a Rydberg exciton can be dressed by strongly correlated flat-band electrons in an adjacent Mott layer. Under an out-of-plane magnetic field, spin-polarized Nb$_3$Cl$_8$ states further induce valley-selective exciton coupling, producing a strongly enhanced circular polarization of the WSe$_2$ exciton emission. These results extend exciton-based sensing and exciton-polaron physics to intrinsic flat-band Mott materials, providing an optical route to probe and engineer correlation-driven interfacial quasiparticles.

cond-mat.mtrl-sci↗
arXiv2026

Signatures of a ferro-Josephson effect in twisted graphene

When a spin-polarized current is driven across a magnetic domain wall, the resulting spin-transfer torque may, beyond a critical threshold, set the wall's moments into precession. This precession modulates the Berry curvature experienced by electrons traversing the wall, producing an electromotive force that is topological in nature and proportional to the precession frequency, mapping precisely onto the DC Josephson effect and leading to the name ferro-Josephson effect. We report signatures consistent with this effect in a twisted graphene van der Waals heterostructure, where spin and valley textures are linked by exchange, Hund's coupling, and spin-orbit interactions. Tuned to fillings where the isospin degeneracy is spontaneously broken, the samples develop a sharp peak in the longitudinal resistance within a fraction of a millitesla of $B_\parallel=0$---a peak that disappears as the current is reduced toward zero. In differential resistance the feature resolves into sharp resonances that disperse with $B_\parallel$ on microtesla and picoampere scales. We argue that these arise from the current-driven precession of spin-domain-wall moments, in competition with the in-plane anisotropy set by a minuscule applied field, and that they establish nonlinear transport as a sensitive probe of isospin domain-wall dynamics at energy scales far below $k_BT$.

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arXiv2026

Metastable magnetic domains and the anomalous $B_\parallel=0$ resistance peak in twisted double bilayer graphene

In graphene moirés, valley polarization gives rise to orbital magnetism, manifested as an anomalous Hall effect and resulting in Barkhausen jumps in longitudinal resistance when changing domain configurations modify quasiparticle scattering. Beyond a simple picture of polarized domains, however, spin and valley textures within and between the domains are less well understood, as is the effect of these textures on transport. In the valley-polarized quarter-metal state of twisted double bilayer graphene, a sharp and metastable peak in longitudinal resistance often appears at zero in-plane magnetic field, whose microscopic origin has yet to be identified. Here, we show that this peak depends on the configuration of domains of orbital magnetism, which is itself set by the gate-voltage trajectory used to enter the ordered state and by the magnetic field --- particularly the in-plane component --- present during that trajectory. The sensitivity of the effect to in-plane magnetic field components points to spin, linked to valley polarization through spin-orbit coupling, as the key degree of freedom in both the domain formation and the resistance peak.

cond-mat.mes-hall↗
arXiv2026

Anderson Lattice in Incommensurate $\bf{Nb_3Cl_8}$/Graphene van der Waals Heterostructures

The periodic Anderson model}, traditionally realized in rare-earth compounds with limited tunability, have hindered systematic exploration of correlated quantum phenomena. Here, we introduce a strategy for {realizing and }engineering {this model} in incommensurate van der Waals heterostructures by coupling a Mott insulator (Nb$_3$Cl$_8$) with itinerant electrons (from monolayer graphene), circumventing strict lattice-matching requirements. Through magnetotransport and slave spin mean-field calculations, we demonstrate the hybridization gap ($Δ\approx30$ meV), gate-tunable metal-insulator transition, and band-selective electron effective mass enhancement, hallmarks of Kondo coherence. The heterostructure exhibits a nearly order-of-magnitude enhancement in the effective electron mass between hybridized and conventional graphene-like regimes, alongside in-plane magnetic field-induced metal-insulator transitions. Top gate-temperature phase mapping reveals competing correlated states, including insulating and hidden-order phases. This work establishes an electrically tunable van der Waals platform for studying correlated states generated by coupling a Mott-insulating layer to an itinerant-electron system, providing a materials route for exploring low-dimensional correlated quantum phases.

cond-mat.str-el↗
arXiv2026

Activated Migration of Localized Ligand-Field Excitons in Atomically Thin CrCl3

Two-dimensional crystals with densely packed atoms exhibit a range of emerging properties, particularly a wide variety of excitonic behaviors. Thickness-variable layered chromium trihalides with finite surface recombination sites provide an ideal system for understanding how excitons confined in octahedral ligand fields migrate on nanometer length scales, a regime that defies conventional transport probes. In this work, we demonstrate that Cr3+-derived photoluminescence in CrCl3 is spectrally thickness-independent, but its relaxation dynamics are strongly sensitive to thickness and temperature, thereby indicating significant activated migration. A diffusion-coupled surface recombination model reveals an effective out-of-plane diffusivity of 4.5 x 10-6 cm2/s for the ligand-field excitons and a diffusion activation energy of 130 meV. The latter is comparable to the reorganization energy independently estimated from optical Stokes shifts, suggesting that exciton transport is coupled to local lattice relaxation. Furthermore, we show that the relaxation dynamics can be systematically tuned by either enhancing or suppressing surface recombination through controlled surface reactions or encapsulation. This work not only reveals the nanoscopic transport of localized ligand-field excitons but also establishes a spectroscopic transport probe applicable to various 2D materials.

cond-mat.mtrl-sci↗
arXiv2026

Low-Frequency Charge Noise in Bilayer Graphene Quantum Dots

Bilayer graphene (BLG) quantum dots (QDs) are a promising platform for semiconductor qubits. However, the low-frequency charge noise that may ultimately limit coherence has remained largely unexplored. Here, we systematically characterize charge noise in gate-defined BLG QDs using transport-based noise spectroscopy. We extract a median amplitude of $ S_μ^{1/2} (1~\text{Hz}) = 1.16~μ\text{eV}/\sqrt{\text{Hz}}$, placing BLG well within the range reported for established semiconductor quantum-dot platforms. Across variations in charge occupation, confinement, source-drain bias, and charge-sensor operating conditions, neither the noise amplitude nor the spectral dependence shows a reproducible trend in electrostatic tuning, indicating that we extracted the intrinsic semiconductor noise. Consistent noise levels are further observed in double QDs and confirmed using an independent superconducting resonator-based dispersive readout. Extending the study to BLG devices incorporating transition metal dichalcogenide layers reveals no measurable charge noise increase in weakly proximitized QDs. These results validate BLG as a viable platform for coherent quantum information processing.

cond-mat.mes-hall↗
arXiv2026

Persistence and emergence of quantum defects through pressure-induced phase changes

Extreme pressures can transform materials and their properties, but probing these in-situ is made challenging by the small sample volumes and access requirements demanded by diamond anvil cells. Quantum defects offer a route to local measurements under such conditions, yet their sensing performance can be dictated by pressure-induced changes in their own host material. On the other hand, pressure may also be harnessed as a tool to engineer and stabilize new quantum defects with emergent functionalities. Here, we demonstrate both aspects within a unified platform based on optically active spin-pair defects in hexagonal boron nitride (hBN). As robust quantum sensors under pressure, these spin-1/2 systems retain pressure-independent spin resonances up to 20 GPa while maintaining or even enhancing their optical emission, in stark contrast to the spin-1 boron-vacancy centre in the same material. Simultaneously, we show that compression acts as a means of quantum defect engineering: the starting hBN undergoes an irreversible transformation into wurtzite boron nitride (wBN), during which the defect landscape is reconfigured. Spin-pair sensors are seen to persist across this structural transition, however, depending on the starting material we also observe new, highly fluorescent defects in the wBN phase. These results establish spin-pair defects in boron nitride as pressure-resilient quantum sensors while highlighting high pressure itself as a versatile pathway for creating and tuning quantum emitters.

cond-mat.mes-hall↗
arXiv2026

Twist as a Mechanical Switch for Reconfigurable Stacking in h-BN

Twistronics of layered materials has emerged as a highly active field due to its profound implications for quantum electronics and materials engineering. However, the controllable manipulation of interlayer stacking remains a significant experimental challenge. Here, the homogeneous contact between hexagonal boron nitride layers is shown to be reproducibly switched between two distinct stable stacking configurations via an externally applied torque. Combining experiments and computational modelling, we identify the stacking order of these stable states as the commensurate AA and AB modes. These two states are associated with different rotational torque maxima, exhibiting an asymmetry ratio of 0.7, and distinct dynamics as a function of the twist angle. Moreover, the peak torque values scale linearly with contact area, highlighting the dominant role of edge elasticity in the twisting process. Given that the AA and AB stacking modes correspond to different out-of-plane electric polarization states, our findings offer a pathway for reconfigurable nano- and micro-electromechanical devices.

cond-mat.mes-hall↗
arXiv2026

Antiferromagnetism-altered plasmon dynamics

The interaction between plasmons and magnons is a long-sought phenomenon with implications for fundamental physics and spintronics applications. In three-dimensional systems, this coupling is suppressed by the large mismatch in energy scales, but two-dimensional (2D) plasmons with gapless dispersion can overlap with magnons over a broad spectral range. Despite numerous theoretical predictions, experimental observation of magnon-plasmon interaction has remained elusive. In this work, we study a first-of-its-kind hybrid plasmon-magnon platform based on 2D materials. By deploying scattering-type scanning near-field optical microscopy (s-SNOM) with terahertz radiation, we image propagating plasmon wavepackets at a graphene/NiPS$_3$ interface and track their dynamics across the antiferromagnetic transition of NiPS$_3$. We observe a clear renormalization of the plasmon-polariton dispersion concurrent with the onset of antiferromagnetic order. With complementary Raman scattering and nano-terahertz spectroscopy, we unveil spectral weight redistribution and dielectric screening changes, potentially associated with the multi-magnon continuum, as the underlying mechanism. These results provide solid evidence of coupling between plasmon and antiferromagnetic order, marking a cornerstone for a potential platform for hybrid magnon-plasmon interactions in 2D materials, opening avenues for coherent spin-plasmon devices and tunable terahertz spintronic components.

cond-mat.str-el↗
arXiv2026

Direct observation of flat bands in near-magic-angle twisted bilayer CVD graphene

Advances in chemical vapor deposition (CVD) growth have driven graphene crystal quality to unprecedented levels, yet it is still unknown whether this route can realize the fragile flat-band and correlated states of the magic-angle (MA) twisted bilayer graphene (TBG). Here, we report on the experimental observation by room-temperature nano-angle-resolved photoemission spectroscopy (nano-ARPES) of flat bands in a TBG sample close to the MA, assembled via a grow-and-stack protocol based on low-pressure CVD of graphene on copper. Our study indicates electronic bands fully comparable to those measured in exfoliation-based samples and determines the size of the largest near-MA domain to be compatible with electronic transport experiments, motivating further experiments on flat band physics in CVD-graphene.

cond-mat.mes-hall↗
arXiv2026

Optical Voltage Profiling of 2D Semiconductors via Proximal Exciton Sensing

High contact resistances in atomically thin semiconductors often mask intrinsic electrical transport properties, particularly at low carrier densities where exotic correlated states emerge. We introduce optical voltage profiling, a noninvasive wide-field technique that replaces local voltage probes with a proximal monolayer MoSe$_2$ exciton sensor. Isolated by thin hexagonal boron nitride, this sensor converts the target's local electrostatic potential into spatially resolved modulations of exciton reflectance. Through pixel-wise in situ calibration, these signals yield quantitative two-dimensional voltage maps of an actively biased semiconductor device. Using this method, we demonstrate the carrier-density-driven metal-insulator transition in bilayer MoSe$_2$ and obtain channel resistances below 1 k$Ω$ despite M$Ω$-scale two-terminal resistances in the metallic region. The optically derived resistance exhibits a metal-insulator crossover near the resistance quantum $h/e^2$, and the voltage maps and reconstructed local conductivity reveal pronounced spatial heterogeneity in both insulating and metallic regimes. Beyond resolving channel resistance under high contact-resistance conditions, the technique provides spatially resolved access to microscopic transport heterogeneity in functional van der Waals devices.

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