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Takayuki Nozaki

Publications and source records attributed to Takayuki Nozaki.

At least 19 recordsLinked to original sources
arXiv2026

Insertion Correcting Capability for Quantum Deletion-Correcting Codes

It is conjectured that a quantum code $C$ corrects $t$ deletion errors if and only if $C$ corrects a total of $t$ insertion and deletion errors. Although this conjecture has been proved only under certain conditions, it has not been proved in general. In this paper, we prove this conjecture for general quantum codes. Specifically, we show that a quantum state after an insertion error is represented as a product state of the original multi-qudit system and the inserted quantum state. Then, we prove this conjecture by combining the previous results and this property. In addition, we define generalized insertion errors by removing the quantum channel requirement from insertion errors and present their properties.

cs.IT↗
arXiv2026

Ohm's law for information revealed by a skyrmion Maxwell's demon

Reducing the energy cost of computation-a pressing issue in the age of AI-requires a framework for circuit design based on information thermodynamics. By extending non-equilibrium statistical mechanics to information thermodynamics, it has been shown that a probability flow carrying information-hereinafter referred to as an 'information current'-is driven by its conjugate thermodynamic force, namely 'information affinity'. Since information affinity plays a role analogous to that of voltage in an electrical circuit, it is suggested that information transport also follows a linear response relationship analogous to Ohm's law. However, despite this theoretical prediction, experimentally establishing an Ohm-like constitutive relation for information transport remains an important unsolved problem. Here, we realise an information engine consisting of two magnetic skyrmions undergoing Brownian motion at room temperature. We demonstrate that the resulting information current is proportional to the information affinity generated by Maxwell's demon over a relatively wide range, establishing Ohm's law for information. Furthermore, we clarify that, in real information circuits, both Ohm's law for information and Kirchhoff's voltage law must be slightly modified to account for interactions between information carriers and the scattering of the information current.

cond-mat.mes-hall↗
arXiv2026

A Decoding Algorithm for Composite Errors Consisting of Deletions and Insertions in Quantum Deletion-Correcting Codes Based on Quantum Reed-Solomon Codes

This paper focuses on Hagiwara codes, which are quantum deletion-correcting codes constructed by the quantum Reed-Solomon codes. Although Hagiwara codes can correct composite errors consisting of deletions and insertions, an efficient decoding algorithm to such errors remains an open problem. In this paper, we provide a decoding algorithm to such errors for Hagiwara codes.

cs.IT↗
arXiv2025

Cryogenic-temperature Grain-to-grain Epitaxial Growth of High-quality Ultrathin CoFe Layer on MgO Tunnel Barrier for High-performance Magnetic Tunnel Junctions

One candidate for ultimate non-volatile memory with ultralow power consumption is magneto-resistive random-access memory (VC-MRAM). To develop VC-MRAM, it is important to fabricate high-performance magnetic tunnel junctions (MTJs), which require the epitaxial growth of an ultrathin ferromagnetic electrode on a crystalline tunnel barrier using a mass-manufacturing-compatible process. In this study, the grain-to-grain epitaxial growth of perpendicularly magnetized CoFe ultrathin films on polycrystalline MgO (001) was demonstrated using cryogenic-temperature sputtering on 300 mm Si wafers. Cryogenic-temperature sputtering at 100 K suppressed the island-like initial growth of CoFe on MgO without hampering epitaxy. Sub-nanometer-thick CoFe layers exhibited remarkable perpendicular magnetic anisotropy (PMA). An even larger PMA was obtained using an Fe-doped MgO (MgFeO) tunnel barrier owing to improved uniformity of the CoFe layer. A 0.8-nm-thick CoFe layer grown on MgFeO exhibited a magnetic damping constant as low as 0.008. The ultralow magnetic damping enables voltage-driven magnetization switching with a low write-error rate (WER) below 10^-6 at a pulse duration of 0.3 ns, and WER on the order of 10^-3 even for a relatively long pulse duration of 1.5 ns. These properties achieved using a mass-manufacturing deposition process can promote the development of VC-MRAM and other advanced spintronic devices based on MTJs.

cond-mat.mtrl-sci↗
arXiv2024

Spin polarization driven by molecular vibrations leads to enantioselectivity in chiral molecules

Chirality pervades multiple scientific domains-physics, chemistry, biology, and astronomy-and profoundly influences their foundational principles. Recently, the chirality-induced spin selectivity (CISS) phenomenon has captured significant attention in physical chemistry due to its potential applications and intriguing underlying physics. Despite its prominence, the microscopic mechanisms of CISS remain hotly debated, hindering practical applications and further theoretical advancements. Here we challenge the established view that attributes CISS-related phenomena to current-induced spin polarization and electron transport across interfaces. We propose that molecular vibrations in chiral molecules primarily drive spin polarization, thereby governing CISS. Employing an electrochemical cell paired with a precisely engineered magnetic multilayer, we demonstrate that the magnetic interactions akin to interlayer exchange coupling are crucial for CISS. Our theoretical study suggests that molecular vibrations facilitate chirality-dependent spin polarization, which plays a pivotal role in CISS-related phenomena such as magnetoresistance and enantiomer separation using ferromagnets. These findings necessitate a paradigm shift in the design and analysis of systems in various scientific fields, extending the role of spin dynamics from traditional areas such as solid-state physics to chemical reactions, molecular biology, and even drug discovery.

cond-mat.mtrl-sci↗
arXiv2024

Coherent Driving of a Single Nitrogen Vacancy Center by a Resonant Magnetic Tunnel Junction

Nitrogen-vacancy (NV) centers, atomic spin defects in diamond, represent an active contender for advancing transformative quantum information science (QIS) and innovations. One of the major challenges for designing NV-based hybrid systems for QIS applications results from the difficulty of realizing local control of individual NV spin qubits in a scalable and energyefficient way. To address this bottleneck, we introduce magnetic tunnel junction (MTJ) devices to establish coherent driving of an NV center by a resonant MTJ with voltage controlled magnetic anisotropy. We show that the oscillating magnetic stray field produced by a resonant micromagnet can be utilized to effectively modify and drive NV spin rotations when the NV frequency matches the corresponding resonance conditions of the MTJ. Our results present a new pathway to achieve all-electric control of an NV spin qubit with reduced power consumption and improved solid-state scalability for implementing cutting-edge QIS technological applications.

cond-mat.mes-hall↗
arXiv2023

Interfacial Fe segregation and its influence on magnetic properties of CoFeB/MgFeO multilayers

We investigated the effect of Fe segregated from partially Fe-substituted MgO (MgFeO) on the magnetic properties of CoFeB/MgFeO multilayers. X-ray photoelectron spectroscopy (XPS) as well as magnetic measurements revealed that the segregated Fe was reduced to metal and exhibited ferromagnetism at the CoFeB/MgFeO interface. The CoFeB/MgFeO multilayer showed more than 2-fold enhancement in perpendicular magnetic anisotropy (PMA) energy density compared with a standard CoFeB/MgO multilayer. The PMA energy density was further enhanced by inserting an ultrathin MgO layer in between CoFeB and MgFeO layers. Ferromagnetic resonance measurement also revealed a remarkable reduction of magnetic damping in the CoFeB/MgFeO multilayers.

cond-mat.mes-hall↗
arXiv2023

Cryogenic temperature deposition of high-performance CoFeB/MgO/CoFeB magnetic tunnel junctions on 300 mm wafers

We developed a cryogenic temperature deposition process for high-performance CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) on 300 mm thermally oxidized silicon wafers. The effect of the deposition temperature of the CoFeB layers on the nanostructure, magnetic and magneto-transport properties of the MTJs were investigated in detail. When CoFeB was deposited at 100 K, the MTJs exhibited a perpendicular magnetic anisotropy (PMA) of 214 uJ/m2 and a voltage-controlled magnetic anisotropy (VCMA) coefficient of -45 fJ/Vm, corresponding to 1.4- and 1.7-fold enhancements in PMA and VCMA, respectively, compared to the case of room-temperature deposition of CoFeB. The improvement in the MTJ properties was not simply due to the morphology of the MTJ films. The interface-sensitive magneto-transport properties indicated that interfacial qualities such as intermixing and oxidation states at the MgO/CoFeB interfaces were improved by the cryogenic temperature deposition. Cryogenic-temperature sputtering deposition is expected to be a standard manufacturing process for next-generation magnetoresistive random-access memory.

cond-mat.mes-hall↗
arXiv2022

Weight Enumerators and Cardinalities for Number-Theoretic Codes

The number-theoretic codes are a class of codes defined by single or multiple congruences. These codes are mainly used for correcting insertion and deletion errors, and for correcting asymmetric errors. This paper presents a formula for a generalization of the complete weight enumerator for the number-theoretic codes. This formula allows us to derive the weight enumerators and cardinalities for the number-theoretic codes. As a special case, this paper provides the Hamming weight enumerators and cardinalities of the non-binary Tenengolts' codes, correcting single insertion or deletion. Moreover, we show that the formula deduces the MacWilliams identity for the linear codes over the ring of integers modulo $r$.

cs.IT↗
arXiv2022

The origin of enhanced interfacial perpendicular magnetic anisotropy in LiF-inserted Fe/MgO interface

The Fe/MgO interface is an essential ingredient in spintronics as it shows giant tunneling magnetoresistance and strong perpendicular magnetic anisotropy (PMA). A recent study demonstrated that the insertion of an ultra-thin LiF layer between the Fe and MgO layers enhances PMA significantly. In this study, we perform x-ray magnetic circular dichroism measurements on Fe/LiF/MgO multilayers to reveal the origin of the PMA enhancement. We find that the LiF insertion increases the orbital-magnetic-moment anisotropy and thus the magnetic anisotropy energy. We attribute the origin of this orbital-magnetic-moment-anisotropy enhancement to the stronger electron localization and electron-electron correlation or the better interface quality with fewer defects.

cond-mat.mtrl-sci↗
arXiv2022

Electric-Field-Induced Coherent Control of Nitrogen Vacancy Centers

Enabling scalable and energy-efficient control of spin defects in solid-state media is desirable for realizing transformative quantum information technologies. Exploiting voltage-controlled magnetic anisotropy, we report coherent manipulation of nitrogen-vacancy (NV) centers by the spatially confined magnetic stray fields produced by a proximate resonant magnetic tunnel junction (MTJ). Remarkably, the coherent coupling between NV centers and the MTJ can be systematically controlled by a DC bias voltage, allowing for appreciable electrical tunability in the presented hybrid system. In comparison with current state-of-the-art techniques, the demonstrated NV-based quantum operational platform exhibits significant advantages in scalability, device compatibility, and energy-efficiency, further expanding the role of NV centers in a broad range of quantum computing, sensing, and communications applications.

cond-mat.mes-hall↗
arXiv2021

Efficient Encoding Algorithm of Binary and Non-Binary LDPC Codes Using Block Triangulation

We propose an efficient encoding algorithm for the binary and non-binary low-density parity-check codes. This algorithm transforms the parity part of the parity-check matrix into a block triangular matrix with low weight diagonal submatrices by row and column permutations in the preprocessing stage. This algorithm determines the parity part of a codeword by block back-substitution to reduce the encoding complexity in the encoding stage. Numerical experiments show that this algorithm has a lower encoding complexity than existing encoding algorithms. Moreover, we show that this algorithm encodes the non-binary cycle codes in linear time.

cs.IT↗
arXiv2021

Distance Enumerators for Number-Theoretic Codes

The number-theoretic codes are a class of codes defined by single or multiple congruences and are mainly used for correcting insertion and deletion errors. Since the number-theoretic codes are generally non-linear, the analysis method for such codes is not established enough. The distance enumerator of a code is a unary polynomial whose $i$th coefficient gives the number of the pairs of codewords with distance $i$. The distance enumerator gives the maximum likelihood decoding error probability of the code. This paper presents an identity of the distance enumerators for the number-theoretic codes. Moreover, as an example, we derive the Hamming distance enumerator for the Varshamov-Tenengolts (VT) codes.

cs.IT↗
arXiv2020

Construction and Encoding Algorithm for Maximum Run-Length Limited Single Insertion/Deletion Correcting Code

Maximum run-length limited codes are constraint codes used in communication and data storage systems. Insertion/deletion correcting codes correct insertion or deletion errors caused in transmitted sequences and are used for combating synchronization errors. This paper investigates the maximum run-length limited single insertion/deletion correcting (RLL-SIDC) codes. More precisely, we construct efficiently encodable and decodable RLL-SIDC codes. Moreover, we present its encoding algorithm and show the redundancy of the code.

cs.IT↗
arXiv2019

High frequency voltage-induced ferromagnetic resonance in magnetic tunnel junctions

Voltage-induced ferromagnetic resonance (V-FMR) in magnetic tunnel junctions (MTJs) with a W buffer is investigated. Perpendicular magnetic anisotropy (PMA) energy is controlled by both thickness of a CoFeB free layer deposited directly on the W buffer and a post-annealing process at different temperatures. The PMA energy as well as the magnetization damping are determined by analysing field-dependent FMR signals in different field geometries. An optimized MTJ structure enabled excitation of V-FMR at frequencies exceeding 30 GHz. The macrospin modelling is used to analyse the field- and angular-dependence of the V-FMR signal and to support experimental magnetization damping extraction.

physics.app-ph↗
arXiv2019

Deterministic magnetization switching by voltage-control of magnetic anisotropy and Dzyaloshinskii-Moriya interaction under in-plane magnetic field

Based on the micromagnetic simulations the magnetization switching in a triangle magnetic element by voltage-control of magnetic anisotropy and Dzyaloshinskii-Moriya interaction under in-plane magnetic field is proposed. The proposed switching scheme is not the toggle switching but the deterministic switching where the magnetic state is determined by the polarity of the applied voltage pulse. The mechanism and conditions for the switching are clarified. The results provide a fast and low-power writing method for magnetoresistive random access memories.

cond-mat.mes-hall↗
arXiv2018

Symmetry and polarity of the voltage-controlled magnetic anisotropy studied by the Anomalous Hall effect

The voltage-controlled magnetic anisotropy (VCMA) effect in FeB and FeB/W films was measured by four independent methods. All measurements are consistent and show the same tendency. The coercive field, Hall angle, anisotropy field, the magnetization switching time and retention time linearly decrease when the gate voltage increases and they linearly increase when the gate voltage decreases.

cond-mat.mtrl-sci↗