arXiv subjects

Tang Su

Publications and source records attributed to Tang Su.

At least 19 recordsLinked to original sources

arXiv2026

Characterizing charge-parity detection based on an offset-charge-tunable transmon qubit via randomized benchmarking

Superconducting qubits are compelling platforms for charge-parity detection and, due to their theoretical sensitivity on the meV energy scale, hold promise for rare event searches. In this work, we realize high-fidelity mapping of charge-parity states onto qubit states using an offset-charge-tunable transmon qubit and efficiently characterize the fidelity of the charge-parity detection via randomized benchmarking. Specifically, a gate control line is applied to control offset charge, allowing us to achieve the single-qubit gate fidelity up to 99.96%. We combine a net-zero-based pulse on the gate line with a spin-echo-based sequence to realize charge-parity mapping, achieving a fidelity of 99.37%. Then, we demonstrate continuous monitoring of the charge-parity state with over 93.4% fidelity at a 4-\mu s sampling interval. Finally, an error analysis of charge-parity detection is performed, and it is found that qubit readout is currently the largest source of error. We believe this work lays the foundation for future exploration of ultra-low energy particles.

quant-ph↗

arXiv2025

High-performance quantum interconnect between bosonic modules beyond transmission loss constraints

Distributed quantum computing architectures require high-performance quantum interconnects between quantum information processing units, while previous implementations have been fundamentally limited by transmission line losses. Here, we demonstrate a low-loss interconnect between two superconducting modules using an aluminum coaxial cable, achieving a bus mode quality factor of 1.7e6. By employing SNAIL as couplers, we realize inter-modular state transfer in 0.8 {\mu}s via a three-wave mixing process. The state transfer fidelity reaches 98.2% for quantum states encoded in the first two energy levels, achieving a Bell state fidelity of 92.5%. Furthermore, we show the capability to transfer high-dimensional states by successfully transmitting binomially encoded logical states. Systematic characterization reveals that performance constraints have shifted from transmission line losses (contributing merely 0.2% infidelity) to module-channel interface effects and local Kerr nonlinearities. Our work advances the realization of quantum interconnects approaching fundamental capacity limits, paving the way for scalable distributed quantum computing and efficient quantum communications.

quant-ph↗

arXiv2025

Mitigating Measurement Crosstalk via Pulse Shaping

Quantum error correction protocols require rapid and repeated qubit measurements. While multiplexed readout in superconducting quantum systems improves efficiency, fast probe pulses introduce spectral broadening, leading to signal leakage into neighboring readout resonators. This crosstalk results in qubit dephasing and degraded readout fidelity. Here, we introduce a pulse shaping technique inspired by the derivative removal by adiabatic gate (DRAG) protocol to suppress measurement crosstalk during fast readout. By engineering a spectral notch at neighboring resonator frequencies, the method effectively mitigates spurious signal interference. Our approach integrates seamlessly with existing readout architectures, enabling fast, low-crosstalk multiplexed measurements without additional hardware overhead - a critical advancement for scalable quantum computing.

quant-ph↗

arXiv2025

Exact Decoding of Repetition Code under Circuit Level Noise

Repetition code forms a fundamental basis for quantum error correction experiments. To date, it stands as the sole code that has achieved large distances and extremely low error rates. Its applications span the spectrum of evaluating hardware limitations, pinpointing hardware defects, and detecting rare events. However, current methods for decoding repetition codes under circuit level noise are suboptimal, leading to inaccurate error correction thresholds and introducing additional errors in event detection. In this work, we establish that repetition code under circuit level noise has an exact solution, and we propose an optimal maximum likelihood decoding algorithm called planar. The algorithm is based on the exact solution of the spin glass partition function on planar graphs and has polynomial computational complexity. Through extensive numerical experiments, we demonstrate that our algorithm uncovers the exact threshold for depolarizing noise and realistic superconductor SI1000 noise. Furthermore, we apply our method to analyze data from recent quantum memory experiments conducted by Google Quantum AI, revealing that part of the error floor was attributed to the decoding algorithm used by Google. Finally, we implemented the repetition code quantum memory on superconducting systems with a 72-qubit quantum chip lacking reset gates, demonstrating that even with an unknown error model, the proposed algorithm achieves a significantly lower logical error rate than the matching-based algorithm.

quant-ph↗

arXiv2024

Multi-Purpose Architecture for Fast Reset and Protective Readout of Superconducting Qubits

The ability to fast reset a qubit state is crucial for quantum information processing. However, to actively reset a qubit requires engineering a pathway to interact with a dissipative bath, which often comes with the cost of reduced qubit protection from the environment. Here, we present a novel multi-purpose architecture that enables fast reset and protection of superconducting qubits during control and readout. In our design, two on-chip diplexers are connected by two transmission lines. The high-pass branch provides a flat passband for convenient allocation of readout resonators above the qubit frequencies, which is preferred for reducing measurement-induced state transitions. In the low-pass branch, we leverage a standing-wave mode below the maximum qubit frequency for a rapid reset. The qubits are located in the common stopband to inhibit dissipation during coherent operations. We demonstrate resetting a transmon qubit from its first excited state to the ground state in 100 ns, achieving a residual population of 2.7%. The reset time may be further shortened to 27 ns by exploiting the coherent population inversion effect. We further extend the technique to resetting the qubit from its second excited state. Our approach promises scalable implementation of fast reset and qubit protection during control and readout, adding to the toolbox of dissipation engineering.

quant-ph↗

arXiv2023

Error per single-qubit gate below $10^{-4}$ in a superconducting qubit

Implementing arbitrary single-qubit gates with near perfect fidelity is among the most fundamental requirements in gate-based quantum information processing. In this work, we fabric a transmon qubit with long coherence times and demonstrate single-qubit gates with the average gate error below $10^{-4}$, i.e. $(7.42\pm0.04)\times10^{-5}$ by randomized benchmarking (RB). To understand the error sources, we experimentally obtain an error budget, consisting of the decoherence errors lower bounded by $(4.62\pm0.04)\times10^{-5}$ and the leakage rate per gate of $(1.16\pm0.04)\times10^{-5}$. Moreover, we reconstruct the process matrices for the single-qubit gates by the gate set tomography (GST), with which we simulate RB sequences and obtain single-qubit fedlities consistent with experimental results. We also observe non-Markovian behavior in the experiment of long-sequence GST, which may provide guidance for further calibration. The demonstration extends the upper limit that the average fidelity of single-qubit gates can reach in a transmon-qubit system, and thus can be an essential step towards practical and reliable quantum computation in the near future.

quant-ph↗

arXiv2023

Mapping Topology-Localization Phase Diagram with Quasiperiodic Disorder Using a Programmable Superconducting Simulator

We explore topology-localization phase diagram by simulating one-dimensional Su-Schrieffer-Heeger (SSH) model with quasiperiodic disorder using a programmable superconducting simulator. We experimentally map out and identify various trivial and topological phases with extended, critical, and localized bulk states. We find that with increasing disorder strength, some extended states can be first replaced by localized states and then by critical states before the system finally becomes fully localized. The critical states exhibit typical features such as multifractality and self-similarity, which lead to surprisingly rich phases with different types of mobility edges and scaling behaviors on the phase boundaries. Our results shed new light on the investigation of the topological and localization phenomena in condensed-matter physics.

quant-ph↗

arXiv2021

Vacuum-gap transmon qubits realized using flip-chip technology

Significant progress has been made in building large-scale superconducting quantum processors based on flip-chip technology. In this work, we use the flip-chip technology to realize a modified transmon qubit, donated as the "flipmon", whose large shunt capacitor is replaced by a vacuum-gap parallel plate capacitor. To further reduce the qubit footprint, we place one of the qubit pads and a single Josephson junction on the bottom chip and the other pad on the top chip which is galvanically connected with the single Josephson junction through an indium bump. The electric field participation ratio can arrive at nearly 53% in air when the vacuum-gap is about 5 microns, and thus potentially leading to a lower dielectric loss. The coherence times of the flipmons are measured in the range of 30-60 microseconds, which are comparable with that of traditional transmons with similar fabrication processes. The electric field simulation indicates that the metal-air interface's participation ratio increases significantly and may dominate the qubit's decoherence. This suggests that more careful surface treatment needs to be considered. No evidence shows that the indium bumps inside the flipmons cause significant decoherence. With well-designed geometry and good surface treatment, the coherence of the flipmons can be further improved.

quant-ph↗

arXiv2021

Transmon qubit with relaxation time exceeding 0.5 milliseconds

By using the dry etching process of tantalum (Ta) film, we had obtained transmon qubit with the best lifetime (T1) 503 us, suggesting that the dry etching process can be adopted in the following multi-qubit fabrication with Ta film. We also compared the relaxation and coherence times of transmons made with different materials (Ta, Nb and Al) with the same design and fabrication processes of Josephson junction, we found that samples prepared with Ta film had the best performance, followed by those with Al film and Nb film. We inferred that the reason for this difference was due to the different loss of oxide materials located at the metal-air interface.

quant-ph↗

arXiv2020

Current-induced CrI3 surface spin-flop transition probed by proximity magnetoresistance in Pt

By exploiting proximity coupling, we probe the spin state of the surface layers of CrI3, a van der Waals magnetic semiconductor, by measuring the induced magnetoresistance (MR) of Pt in Pt/CrI3 nano-devices. We fabricate the devices with clean and stable interfaces by placing freshly exfoliated CrI3 flake atop pre-patterned thin Pt strip and encapsulating the Pt/CrI3 heterostructure with hexagonal boron nitride (hBN) in a protected environment. In devices consisting of a wide range of CrI3 thicknesses (30 to 150 nm), we observe that an abrupt upward jump in Pt MR emerge at a 2 T magnetic field applied perpendicularly to the layers when the current density exceeds 2.5x10^10 A/m2, followed by a gradual decrease over a range of 5 T. These distinct MR features suggest a spin-flop transition which reveals strong antiferromagnetic interlayer coupling in the surface layers of CrI3. We study the current dependence by holding the Pt/CrI3 sample at approximately the same temperature to exclude the joule heating effect, and find that the MR jump increases with the current density, indicating a spin current origin. This spin current effect provides a new route to control spin configurations in insulating antiferromagnets, which is potentially useful for spintronic applications.

cond-mat.mes-hall↗

arXiv2019

Coexistence of Magnetic Orders in Two-Dimensional Magnet CrI$_3$

The magnetic properties in two-dimensional van der Waals materials depend sensitively on structure. CrI3, as an example, has been recently demonstrated to exhibit distinct magnetic properties depending on the layer thickness and stacking order. Bulk CrI3 is ferromagnetic (FM) with a Curie temperature of 61 K and a rhombohedral layer stacking, while few-layer CrI3 has a layered antiferromagnetic (AFM) phase with a lower ordering temperature of 45 K and a monoclinic stacking. In this work, we use cryogenic magnetic force microscopy to investigate CrI3 flakes in the intermediate thickness range (25 - 200 nm) and find that the two types of magnetic orders hence the stacking orders can coexist in the same flake, with a layer of ~13 nm at each surface being in the layered AFM phase similar to few-layer CrI3 and the rest in the bulk FM phase. The switching of the bulk moment proceeds through a remnant state with nearly compensated magnetic moment along the c-axis, indicating formation of c-axis domains allowed by a weak interlayer coupling strength in the rhombohedral phase. Our results provide a comprehensive picture on the magnetism in CrI3 and point to the possibility of engineering magnetic heterostructures within the same material.

cond-mat.mes-hall↗

arXiv2019

Probing Magnetism in Insulating Cr2Ge2Te6 by Induced Anomalous Hall Effect in Pt

Two-dimensional ferromagnet Cr2Ge2Te6 (CGT) is so resistive below its Curie temperature that probing its magnetism by electrical transport becomes extremely difficult. By forming heterostructures with Pt, however, we observe clear anomalous Hall effect (AHE) in 5 nm thick Pt deposited on thin (< 50 nm) exfoliated flakes of CGT. The AHE hysteresis loops persist to ~ 60 K, which matches well to the Curie temperature of CGT obtained from the bulk magnetization measurements. The slanted AHE loops with a narrow opening indicate magnetic domain formation, which is confirmed by low-temperature magnetic force microscopy (MFM) imaging. These results clearly demonstrate that CGT imprints its magnetization in the AHE signal of the Pt layer. Density functional theory calculations of CGT/Pt heterostructures suggest that the induced ferromagnetism in Pt may be primarily responsible for the observed AHE. Our results establish a powerful way of investigating magnetism in 2D insulating ferromagnets which can potentially work for monolayer devices.

cond-mat.mes-hall↗

arXiv2019

Highly efficient spin-orbit torque and switching of layered ferromagnet Fe3GeTe2

Among van der Waals (vdW) layered ferromagnets, Fe3GeTe2 (FGT) is an excellent candidate material to form FGT/heavy metal heterostructures for studying the effect of spin-orbit torques (SOT). Its metallicity, strong perpendicular magnetic anisotropy built in the single atomic layers, relatively high Curie temperature (Tc about 225 K) and electrostatic gate tunability offer a tantalizing possibility of achieving the ultimate high SOT limit in monolayer all-vdW nanodevices. The spin current generated in Pt exerts a damping-like SOT on FGT magnetization. At about 2.5x1011 A/m2 current density,SOT causes the FGT magnetization to switch, which is detected by the anomalous Hall effect of FGT. To quantify the SOT effect, we measure the second harmonic Hall responses as the applied magnetic field rotates the FGT magnetization in the plane. Our analysis shows that the SOT efficiency is comparable with that of the best heterostructures containing three-dimensional (3D) ferromagnetic metals and much larger than that of heterostructures containing 3D ferrimagnetic insulators. Such large efficiency is attributed to the atomically flat FGT/Pt interface, which demonstrates the great potential of exploiting vdW heterostructures for highly efficient spintronic nanodevices.

cond-mat.mes-hall↗

arXiv2018

Experimental Signatures of Spin Superfluid Ground State in Canted Antiferromagnet Cr2O3 via Nonlocal Spin Transport

Spin superfluid is a novel emerging quantum matter arising from the Bose-Einstein condensate (BEC) of spin-1 bosons. We demonstrate the spin superfluid ground state in canted antiferromagnetic Cr2O3 thin film at low temperatures via nonlocal spin transport. A large enhancement of the nonlocal spin signal is observed below ~ 20 K, and it saturates from ~ 5 K down to 2 K. We show that the spins can propagate over very long distances (~ 20 micro meters) in such spin superfluid ground state and the nonlocal spin signal decreases very slowly as the spacing increases with an inverse relationship, which is consistent with theoretical prediction. Furthermore, spin superfluidity has been investigated in the canted antiferromagnetic phase of the (11-20)-oriented Cr2O3 film, where the magnetic field dependence of the associated critical temperature follows a two-thirds power law near the critical point. The experimental demonstration of the spin superfluid ground state in canted antiferromagnet will be extremely important for the fundamental physics on the BEC of spin-1 bosons and paves the way for future spin supercurrent devices, such as spin-Josephson junctions.

cond-mat.mtrl-sci↗

arXiv2018

Role of La doping for Topological Hall Effect in Epitaxial EuO Films

We report the critical role of La doping in the topological Hall effect observed in LaxEu1-xO thin films (~ 50 nm) grown by molecular beam epitaxy. When the La doping exceeds 0.036, topological Hall effect emerges, which we attribute to the formation of magnetic skyrmions. Besides, the La doping is found to play a critical role in determining the phases, densities, and sizes of the skyrmions in the LaxEu1-xO thin films. The maximum region of the skyrmion phase diagram is observed on the La0.1Eu0.9O thin film. As the La doping increases, the skyrmion density increases while the skyrmion size decreases. Our findings demonstrate the important role of La doping for the skyrmions in EuO films, which could be important for future studies of magnetic skyrmions in Heisenberg ferromagnets.

cond-mat.mtrl-sci↗

arXiv2017

The Role of Oxygen in Ionic Liquid Gating on 2D Cr2Ge2Te6: a Non-Oxide Material

Ionic liquid gating can markedly modulate the materials' carrier density so as to induce metallization, superconductivity, and quantum phase transitions. One of the main issues is whether the mechanism of ionic liquid gating is an electrostatic field effect or an electrochemical effect, especially for oxide materials. Recent observation of the suppression of the ionic liquid gate-induced metallization in the presence of oxygen for oxide materials suggests the electrochemical effect. However, in more general scenarios, the role of oxygen in ionic liquid gating effect is still unclear. Here, we perform the ionic liquid gating experiments on a non-oxide material: two-dimensional ferromagnetic Cr2Ge2Te6. Our results demonstrate that despite the large increase of the gate leakage current in the presence of oxygen, the oxygen does not affect the ionic liquid gating effect (< 5 % difference), which suggests the electrostatic field effect as the mechanism on non-oxide materials. Moreover, our results show that the ionic liquid gating is more effective on the modulation of the channel resistances compared to the back gating across the 300 nm thick SiO2.

cond-mat.mtrl-sci↗

arXiv2017

Observation of long phase-coherence length in epitaxial La-doped CdO thin films

The search for long electron phase coherence length, which is the length that an electron can keep its quantum wave-like properties, has attracted considerable interest in the last several decades. Here, we report the long phase coherence length of ~ 3.7 micro meters in La-doped CdO thin films at 2 K. Systematical investigations of the La doping and the temperature dependences of the electron mobility and the electron phase coherence length reveal contrasting scattering mechanisms for these two physical properties. Furthermore, these results show that the oxygen vacancies could be the dominant scatters in CdO thin films that break the electron phase coherence, which would shed light on further investigation of phase coherence properties in oxide materials.

cond-mat.mtrl-sci↗

arXiv2017

Electric Field Effect in Multilayer Cr2Ge2Te6: a Ferromagnetic Two-Dimensional Material

The emergence of two-dimensional (2D) materials has attracted a great deal of attention due to their fascinating physical properties and potential applications for future nanoelectronic devices. Since the first isolation of graphene, a Dirac material, a large family of new functional 2D materials have been discovered and characterized, including insulating 2D boron nitride, semiconducting 2D transition metal dichalcogenides and black phosphorus, and superconducting 2D bismuth strontium calcium copper oxide, molybdenum disulphide and niobium selenide, etc. Here, we report the identification of ferromagnetic thin flakes of Cr2Ge2Te6 (CGT) with thickness down to a few nanometers, which provides a very important piece to the van der Waals structures consisting of various 2D materials. We further demonstrate the giant modulation of the channel resistance of 2D CGT devices via electric field effect. Our results illustrate the gate voltage tunability of 2D CGT and the potential of CGT, a ferromagnetic 2D material, as a new functional quantum material for applications in future nanoelectronics and spintronics.

cond-mat.mtrl-sci↗