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Thomas Pardoen

Publications and source records attributed to Thomas Pardoen.

2 recordsLinked to original sources

Deformation-induced amorphous complexion transitions elevate strength and ductility

Grain boundary engineering is a major avenue for tailoring the mechanical behavior of polycrystalline materials. Grain boundary complexions, including amorphous intergranular films, are classically accessed through thermal driving forces and solute segregation. Here, we discover that plastic deformation can drive amorphous complexion transitions at room temperature in a chemically primed nanocrystalline binary CuZr alloy. High-resolution and four-dimensional scanning transmission electron microscopy reveal that the amorphous complexions preferentially emerge at incoherent twin boundaries. Spatially-resolved electron pair distribution function analysis at the atomic scale, the local-order characterization of amorphous complexions, demonstrates short-range and medium-range order gradients from crystal-templated interfaces to a metallic-glass-like core. We thus uncover a novel amorphous complexion transformation-induced plasticity mechanism that concurrently increases the yield strength, fracture strain, and tensile toughness about a factor of two relative to a designed reference material. Our findings establish mechanical deformation as a non-thermal pathway to trigger amorphous interfacial states for enhancing damage tolerance in nanostructured metals.

cond-mat.mtrl-sci

Band gap reduction in highly-strained silicon beams predicted by first-principles theory and validated using photoluminescence spectroscopy

A theoretical study of the band gap reduction under tensile stress is performed and validated through experimental measurements. First-principles calculations based on density functional theory (DFT) are performed for uniaxial stress applied in the [001], [110] and [111] directions. The calculated band gap reductions are equal to 126, 240 and 100 meV at 2$\%$ strain, respectively. Photoluminescence spectroscopy experiments are performed by deformation applied in the [110] direction. Microfabricated specimens have been deformed using an on-chip tensile technique up to ~1$\%$ as confirmed by back-scattering Raman spectroscopy. A fitting correction based on the band gap fluctuation model has been used to eliminate the specimen interference signal and retrieve reliable values. Very good agreement is observed between first-principles theory and experimental results with a band gap reduction of, respectively, 93 and 91 meV when the silicon beam is deformed by 0.95$\%$ along the [110] direction.

cond-mat.mtrl-sci