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Tomoko Ito

Publications and source records attributed to Tomoko Ito.

2 recordsLinked to original sources

Physiologically Informed Digital Auscultation for Pneumonia Detection in Long-term Care Residents

Pneumonia is difficult to diagnose in older long-term care residents; multimorbidity and atypical presentations obscure signs, motivating operationally efficient objective testing. We analyzed multi-channel digital stethoscope recordings from 185 Japanese residents (73 pneumonia, 112 symptomatic without), using radiologist-confirmed chest X-rays and clinician diagnoses as supervisory signals that train convolutional neural networks, multimodal fusion, and channel-based variants with time-domain Grad-CAM interpretability. Models were evaluated with repeated patient-level cross-validation showing models with X-ray supervision outperformed clinician supervision (F1 0.729, accuracy 0.783 vs. F1 0.637, accuracy 0.711). Additionally, a three-channel selection protocol maintained performance (F1 0.736; accuracy 0.803), with two mid-thoracic sites ranking highest and Grad-CAM attention overlapping adventitious sounds. These findings indicate automated multi-channel lung-sound analysis can aid long-term care pneumonia diagnosis, with X-ray supervision being more reliable than clinical, and fewer channels preserving performance while lowering acquisition times.

cs.SD

Beam experiments for reactive ion etching of silicon (Si)-based materials by silicon halide ions

Etching yields of Si, SiO2, and Si3N4 have been determined for silicon ion (Si+), halogen ions (F+, Cl+, and Br+) and silicon halide ions (SiF+, SiF3+, SiCl+, SiCl3+, SiBr+, and SiBr3+) irradiation in 300 to 1000 eV using a mass-selected ion beam apparatus that can irradiate a single species ion to sample surfaces under an ultra-high vacuum condition. Si+ irradiation below 1000eV deposits silicon atoms on Si, SiO2, and Si3N4 surfaces. The etching yields of silicon tri-halide ions (SiF3+, SiCl3+, and SiBr3+) above 1000 eV are larger than those of halogen ions, respectively, and these etching yields depend on the incident ion energy and the etching material (especially Si3N4). At low incident energy, silicon mono-halide ions (SiF+, SiCl+, and SiBr+) deposit silicon on substrates, and the etching threshold energy depends on the halogen species. This information contributes to a database of experimental values needed to increase the precision of an etching process and a profile simulator.

physics.plasm-ph