arXiv subjects

William C. Tegge

Publications and source records attributed to William C. Tegge.

3 recordsLinked to original sources

arXiv2026

RAPID: Row-Parallel Arithmetic Processing in DRAM

Processing-using-memory (PUM) architectures perform computation directly within DRAM to reduce costly data movement between memory and processors. Because charge-sharing operations are confined to individual bitlines, existing DRAM-PUM architectures reorganize data into column-oriented, bit-serial representations. This organization is fundamentally incompatible with the row-oriented, word-parallel layouts used by conventional processors and accelerators, requiring expensive data-layout transformations whenever computation transitions between PUM and conventional execution. In this paper, we present RAPID, a Row-parallel Arithmetic Processing-In-DRAM architecture. RAPID augments the DRAM subarray with two lightweight extensions: migration cells that enable localized horizontal data movement between neighboring bitlines and inversion cells that provide efficient in-array logical inversion. These primitives enable RAPID to operate directly on row-parallel, bit-parallel data, preserving CPU-compatible layouts while exploiting the massive parallelism of the DRAM subarray. In particular, RAPID demonstrates that localized horizontal communication is sufficient to realize shallow arithmetic networks and efficient parallel reduction for multiplication, reducing arithmetic latency while preserving throughput and eliminating costly data-layout transformations, all while maintaining the conventional DRAM array organization. We demonstrate the feasibility and overhead of augmenting DRAM subarrays with migration and inversion cells through detailed transistor-level layout and SPICE-validated circuit simulations. Using the RAPID compiler it is possible to evaluate the performance and data reorganization tradeoffs to ensure the best execution across combined CPU and PUM. Evaluating RAPID on 19 MLPerf benchmarks, there is a 5.9x higher end-to-end performance compared to SIMDRAM for DDR4 PUM execution.

cs.AR↗

arXiv2026

YAVIN: A Unified Architecture for Secure Edge Processing in Memory

Secure, private multi-tenant execution spanning processors, memory, and accelerators remains one of the most significant challenges in modern edge computing systems. Simultaneously, processing-in-memory (PIM) has emerged as an effective approach for reducing the Von Neumann bottleneck by moving computation closer to data. Existing trusted execution environments (TEEs) establish trust only within the processor, protecting data while it traverses untrusted resources such as the memory bus. Consequently, trusted computation cannot be performed directly within memory. We present YAVIN, a unified trusted computing base (TCB) that extends the TEE beyond the processor to encompass both processor execution and a dedicated memory region supporting trusted processing-in-memory execution while treating the memory bus as untrusted. Leveraging the dedicated protected memory regions already established by conventional TEE architectures, YAVIN enables data to be decrypted, processed, and re-encrypted by either processor or PIM execution while remaining within the TEE. To realize this unified TCB, YAVIN presents the first PIM implementations of the LightSaber KEM post-quantum cryptosystem and ASCON-128 authenticated encryption, co-designing both algorithms for efficient DRAM execution to establish and maintain shared cryptographic state. Finally, we demonstrate how cryptography-PIM co-design for tensor-based workloads reorganizes computation to satisfy the ordering constraints imposed by authenticated encryption with minimal performance overhead while simultaneously enabling bit-sliced ordering that limits temporary plaintext exposure. Compared to the latest PIM AES implementation, YAVIN achieves more than a 20x speedup while incurring only 34% and 9.3% overhead when executing INT8 and INT32 quantized edge-class LLMs, respectively, relative to plaintext execution.

cs.AR↗

arXiv2026

Shifting in-DRAM

Processing-in-Memory (PIM) architectures enable computation directly within DRAM and help combat the memory wall problem. Bit-shifting is a fundamental operation that enables PIM applications such as shift-and-add multiplication, adders using carry propagation, and Galois field arithmetic used in cryptography algorithms like AES and Reed-Solomon error correction codes. Existing approaches to in-DRAM shifting require adding dedicated shifter circuits beneath the sense amplifiers to enable horizontal data movement across adjacent bitlines or vertical data layouts which store operand bits along a bitline to implement shifts as row-copy operations. In this paper, we propose a novel DRAM subarray design that enables in-DRAM bit-shifting for open-bitline architectures. In this new design, we built upon prior work that introduced a new type of cell used for row migration in asymmetric subarrays, called a "migration cell". We repurpose and extend the functionality by adding a row of migration cells at the top and bottom of each subarray which enables bidirectional bit-shifting within any given row. This new design maintains compatibility with standard DRAM operations. Unlike previous approaches to shifting, our design operates on horizontally-stored data, eliminating the need and overhead of data transposition, and our design leverages the existing cell structures, eliminating the need for additional complex logic and circuitry. We present an evaluation of our design that includes timing and energy analysis using NVMain, circuit-level validation of the in-DRAM shift operation using LTSPICE, and a VLSI layout implementation in Cadence Virtuoso.

cs.AR↗