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Wojciech Szuszkiewicz

Publications and source records attributed to Wojciech Szuszkiewicz.

4 recordsLinked to original sources

Paramagnetic phase of MnTe$_2$: complete one phonon Raman spectrum

In this study we present a complete first-order Raman scattering spectrum of paramagnetic phase of MnTe$_2$- a material, where new type of spin texture induced by noncoplanar antiferromagnetic ordering below the Néel temperature ($T_N \approx 90$ K) gives rise to unconventional scenario of magnetism. Basic properties of all five phonon modes ($A_g$, $E_g$ and three $T_g$) predicted by the group theory have been successfully approached through polarization, excitation and temperature dependent measurements. In particular, the ever-missing phonon mode of $T_g$ symmetry has been unambiguously resolved in the room temperature Raman spectrum at approximately 107 cm$^{-1}$, just 1.5 cm$^{-1}$ higher in frequency compared to the $E_g$ mode. Density functional theory calculations reproduce the observed Raman-active phonon spectrum and support the assignment of all five first-order Raman modes, including the near-degeneracy of the $E_g$ and one of the $T_g$ vibrations. The calculations further reveal a dense manifold of low-energy antiferromagnetic spin configurations, separated from the ground state by only a few meV per formula unit. Furthermore, strong signals of inelastically scattered light from the paramagnetic (PM) phase of MnTe$_2$ were acquired with long wavelength excitations, i.e. 633 nm and 785 nm, revealing the $2A_g$ overtone at approx. 360 cm$^{-1}$. The enhanced absorption of the light in the near infrared range could be a putative reason behind the anomalous angular dependence of scattered intensity of the highest frequency $T_g$ phonon mode (183 cm$^{-1}$) measured in PM MnTe$_2$ with parallelly aligned polarizers. Finally, upon cooling just below the $T_N$, the measured properties of phonons remained basically unperturbed by the incipient long-range antiferromagnetic ordering.

cond-mat.mtrl-sci↗

Electron-phonon coupling and a resonant-like optical observation of a band inversion in topological crystalline insulator Pb$_{1-x}$Sn$_x$Se

The optical reflectivity of Pb$_{0.865}$Sn$_{0.135}$Se and Pb$_{0.75}$Sn$_{0.25}$Se solid solutions was measured in the THz spectral region energetically corresponding to bulk optical phonon excitations and in the temperature range from 40 K to 280 K. The analysis of Pb$_{0.75}$Sn$_{0.25}$Se data performed within the dynamic dielectric function formalism revealed a new effect due to the electron-phonon coupling resulting in resonant changes of LO phonon frequency for energy gap equal to zero or to LO phonon energy. This effect is absent for Pb$_{0.865}$Sn$_{0.135}$Se that exhibits an open energy gap with trivial band ordering at all temperatures. These results show that reflectivity in the THz range constitute a versatile experimental method for precise determination of band inversion in narrow-gap topological materials. For Pb$_{0.75}$Sn$_{0.25}$Se the transition from trivial insulator to topological crystalline insulator phase takes place at temperature T$_0$ = (172 $\pm$ 2) K.

cond-mat.mtrl-sci↗

All-wurtzite (In,Ga)As-(Ga,Mn)As core-shell nanowires grown by molecular beam epitaxy

Structural and magnetic properties of (In,Ga)As-(Ga,Mn)As core-shell nanowires grown by molecular beam epitaxy on GaAs(111)B substrate with gold catalyst have been investigated.(In,Ga)As core nanowires were grown at high temperature (500 °C) whereas (Ga,Mn)As shells were deposited on the {1-100} side facets of the cores at much lower temperature (220 °C). High resolution transmission electron microscopy images and high spectral resolution Raman scattering data show that both the cores and the shells of the nanowires have wurtzite crystalline structure. Scanning and transmission electron microscopy observations show smooth (Ga,Mn)As shells containing 5% of Mn epitaxially deposited on (In,Ga)As cores containing about 10% of In, without any misfit dislocations at the core-shell interface. With the In content in the (In,Ga)As cores larger than 5% the (In,Ga)As lattice parameter is higher than that of (Ga,Mn)As and the shell is in the tensile strain state. Elaborated magnetic studies indicate the presence of ferromagnetic coupling in (Ga,Mn)As shells at the temperatures in excess of 33 K. This coupling is maintained only in separated mesoscopic volumes resulting in an overall superparamagnetic behavior which gets blocked below ~17 K.

cond-mat.mtrl-sci↗

Structural and optical properties of self-catalytic GaAs:Mn nanowires grown by molecular beam epitaxy on silicon substrates

Mn-doped GaAs nanowires were grown in the self-catalytic growth mode on oxidized Si(100) surface by molecular beam epitaxy and characterized by scanning and transmission electron microscopy, Raman scattering, photoluminescence, cathodoluminescence, and electron transport measurements. The transmission electron microscopy studies evidenced the substantial accumulation of Mn inside the catalyzing Ga droplets at the top of the nanowires. Optical and transport measurements revealed that the limit of Mn content for self-catalysed growth of GaAs nanowires corresponds to the doping level, i.e., is much lower than the Mn/Ga flux ratio (about 3%) used during the MBE growth. The resistivity measurements of individual nanowires confirmed that they are conductive, in accordance with the photoluminescence measurements which showed the presence of Mn2+ acceptors located at Ga sites of the GaAs host lattice of the nanowires. An anomalous temperature dependence of the photoluminescence related to excitons was demonstrated for Mn-doped GaAs nanowires.

cond-mat.mtrl-sci↗