arXiv subjects

Xia

Publications and source records attributed to Xia.

At least 19 recordsLinked to original sources

arXiv2022

Monolithically integrated 940 nm half VCSELs on bulk Ge substrates

High quality n-type AlGaAs distributed Bragg reflectors (DBRs) and lnGaAs multiple quantum wells were successfully monolithically grown on 4-inch off-cut Ge (100) wafers. The grown structures have photoluminescence spectra and reflectance spectra comparable to those grown on conventional bulk GaAs wafers and have smooth morphology and reasonable uniformity. These results strongly support full VCSEL growth and fabrication on larger-area bulk Ge substrates for the mass production of AlGaAs-based VCSELs.

cond-mat.mtrl-sci↗

arXiv2022

Study of monolithically integrated 940 nm AlGaAs distributed Bragg reflectors on graded GaAsP/bulk Si substrates

We report the fabrication of monolithically integrated 940 nm AlGaAs distributed Bragg reflectors (DBRs) on graded GaAsP/Si substrates. Low-density surface bumps and cross-hatch patterns were observed on the DBR surfaces. Cross-sectional DBR layers are smooth and flat. The reflectance spectra of the GaAsP/Si DBRs have lower intensities than the GaAs DBRs and have double peaks. Transfer matrix method calculations, surface scratch and polishing tests were conducted, which suggest that the surface cross-hatch was the cause of the inferior DBR reflectance spectra.

cond-mat.mtrl-sci↗

arXiv2021

Monolithic integration of 940 nm AlGaAs distributed Bragg reflectors on bulk Ge substrates

High quality 940 nm Al$_x$Ga$_{1-x}$As n-type distributed Bragg reflectors (DBRs) were successfully monolithically grown on off-cut Ge (100) substrates. The Ge-DBRs have reflectivity spectra comparable to those grown on conventional bulk GaAs substrates and have smooth morphology, reasonable periodicity and uniformity. These results strongly support VCSEL growth and fabrication on more scalable bulk Ge substrates for large scale production of AlGaAs-based VCSELs.

cond-mat.mtrl-sci↗

arXiv2020

Determination of the Gate Breakdown Mechanisms in p-GaN Gate HEMTs by Multiple-gate-sweep Measurements

In this work, we studied the gate breakdown mechanisms of p-GaN gate AlGaN/GaN HEMTs by a novel multiple-gate-sweep-based method. For the first time, three different breakdown mechanisms were observed and identified separately in the same devices: the metal/p-GaN junction breakdown, the p-GaN/AlGaN/GaN junction breakdown, and the passivation related breakdown. This method is an effective method to determine the breakdown mechanisms. The different BD mechanisms were further confirmed by scanning electron microscopy (SEM). Finally, the temperature dependences of the three BD mechanisms were measured and compared. This analysis method was also employed in the devices with a different passivation material and showed its applicability.

physics.app-ph↗

arXiv2019

Second-order Non-local Attention Networks for Person Re-identification

Recent efforts have shown promising results for person re-identification by designing part-based architectures to allow a neural network to learn discriminative representations from semantically coherent parts. Some efforts use soft attention to reallocate distant outliers to their most similar parts, while others adjust part granularity to incorporate more distant positions for learning the relationships. Others seek to generalize part-based methods by introducing a dropout mechanism on consecutive regions of the feature map to enhance distant region relationships. However, only few prior efforts model the distant or non-local positions of the feature map directly for the person re-ID task. In this paper, we propose a novel attention mechanism to directly model long-range relationships via second-order feature statistics. When combined with a generalized DropBlock module, our method performs equally to or better than state-of-the-art results for mainstream person re-identification datasets, including Market1501, CUHK03, and DukeMTMC-reID.

cs.CV↗

arXiv2019

Oxygen-based digital etching of AlGaN/GaN structures with AlN as etch-stop layers

O2-plamsa-based digital etching of Al0.25Ga0.75N with a 0.8 nm AlN spacer on GaN was investigated. At 40 W RF bias power and 40 sccm oxygen flow, the etch depth of Al0.25Ga0.75N was 5.7 nm per cycle. The 0.8 nm AlN spacer layer acted as an etch-stop layer in 3 cycles. The surface roughness improved to 0.33 nm after 7 digital etch cycles. Compared to the dry etch only approach, this technique causes less damages. It was shown to be effective in precisely controlling the AlGaN etch depth required for recessed-AlGaN HEMTs.

physics.app-ph↗

arXiv2019

Threshold Voltage Improvement and Leakage Reduction of AlGaN/GaN HEMTs Using Dual-Layer SiNx Stressors

In this work, AlGaN/GaN HEMTs with dual-layer SiNx stressors (composed of a low-stress layer and a high-stress layer) were investigated. The low-stress padding layer solved the surface damage problem caused during the deposition of the high-stress SiNx, and provided a good passivated interface. The HEMTs with dual-layer stressors showed a 1 V increase in the threshold voltage (Vth) with comparable on-current and RF current gain to those without stressors. Moreover, the off-current (I_off) was shown to be reduced by one to three orders of magnitude in the strained devices as a result of the lower electric field in AlGaN, which suppressed the gate injection current. The dual-layer stressor scheme supports strain engineering as an effective approach in the pursuit of the normally-off operation of AlGaN/GaN HEMTs.

physics.app-ph↗

arXiv2019

A Method to Determine Broadband Complex Permittivity of Thin Film Dielectric Materials up to 60 GHz

This paper describes a method to determine the complex permittivity of a thin dielectric film from finite element analysis and microstrip line measurements. Two transmission line equivalent circuit models were used for the cases of an air-filled line and a lossless line, whose distributed elements can be calculated from full wave finite element simulations. With these calculated distributed elements and microstrip line measurements, the complex permittivity was extracted. The technique utilizes a simple way to separate the dielectric loss from the measured total loss and the complex permittivity was extracted using the measured propagation constant. A rational dielectric model was employed to fit the extracted complex permittivity, which ensures causality of the final solution. The best fitting results obtained through this procedure are considered as the final permittivity results, which have shown excellent match to the data sheet values. Moreover, simulations using the fitted permittivity exhibit good agreement with the experimental propagation constant data of microstrip lines up to 60 GHz. The proposed method was demonstrated on polyimide, and it can be applied to other thin film materials.

physics.app-ph↗

arXiv2019

Gate Leakage Suppression and Breakdown Voltage Enhancement in p-GaN HEMTs using Metal/Graphene Gates

In this work, single-layer intrinsic and fluorinated graphene were investigated as gate insertion layers in normally-OFF p-GaN gate HEMTs, which wraps around the bottom of the gate forming Ti/graphene/p-GaN at the bottom and Ti/graphene/ SiNx on the two sides. Compared to the Au/Ti/p-GaN HEMTs without graphene, the insertion of graphene can increase the ION/IOFF ratios by a factor of 50, increase the VTH by 0.30 V and reduce the off-state gate leakage by 50 times. Additionally, this novel gate structure has better thermal stability. After thermal annealing at 350 {\deg}C, gate breakdown voltage holds at 12.1 V, which is first reported for Schottky gate p-GaN HEMTs. This is considered to be a result of the 0.24 eV increase in Schottky barrier height and the better quality of the Ti/graphene/p-GaN and Ti/graphene/SiNx interfaces. This approach is very effective in improving the Ion/Iff ratio and gate BV of normally-OFF GaN HEMTs.

physics.app-ph↗

arXiv2019

Silicon Nitride Stress Liner Impacts on the Electrical Characteristics of AlGaN/GaN HEMTs

Due to the piezoelectric nature of GaN, the 2DEG in AlGaN/GaN HEMT could be engineered by strain. In this work, SiNx deposited using dual-frequency PECVD was used as a stressor. The output performance of the devices was dominated by the surface passivation instead of the stress effect. However, the threshold voltage was increased by the induced stress, supporting strain engineering as an effective approach to pursue the normally-off operation of AlGaN/GaN HEMTs.

physics.app-ph↗

arXiv2019

Achieving sub-1 Ohm-mm Non-Recess S/D Contact Resistance in GaN HEMTs Utilizing Simple CMOS Compatible La/Ti/Al/Ti Metal Contacts

In this paper, we report the use of lanthanum (La) in S/D contacts of GaN HEMTs, achieving 0.97 Ohm-mm contact resistance without S/D recess. The HEMTs show well-behaved electrical characteristics and satisfactory reliability. Our studies show that La, a CMOS compatible metal, is promising to lower GaN HEMT S/D contact resistance. La's low work function (3.5 eV) is beneficial for reducing the barrier between the metals and GaN. The Ohmic contact formation mechanism involved was shown to be different from conventional Ti/Al films. Spherical-shaped high-La regions formed near the surface during annealing. La diffuses into the AlGaN layer, and the overlap of La and Al peaks is significantly increased compared with that before annealing.

physics.app-ph↗

arXiv2019

Interdiffusion in Group IV Semiconductor Material Systems: Applications, Research Methods and Discoveries

Group IV semiconductor alloys and heterostructures such as SiGe, GeSn, Ge/Si and SiGe:C have been widely used and under extensive research for applications in major microelectronic and photonic devices. In the growth and processing of these materials, nanometer scale interdiffusion happens that are generally undesirable for device performance. With higher Ge molar fractions and higher compressive strains, Si-Ge interdiffusion can be much faster than dopant diffusion. However, Si-Ge interdiffusion behaviors have not been well understood until recent years. Much less studies are available for GeSn. This review starts with basic properties and the applications of major group IV semiconductors, and then reviews the progress made so far on Si-Ge and Ge-Sn interdiffusion behaviors. Theories, experimental methods, design and practical considerations are discussed together with the key findings in this field.

cond-mat.mtrl-sci↗

arXiv2019

Improved Thin Film Quality and Photoluminescence of N-Doped Epitaxial Germanium-on-Silicon using MOCVD

Ge-on-Si structures in-situ doped with phosphorus or arsenic via metal organic chemical vapor deposition (MOCVD) were investigated. Surface roughness, strain, threading dislocation desnity, Si-Ge interdiffusion, dopant diffusion, and photoluminescence were characterized to study the impacts of defect annealing and Si substrate offcut effects on the Ge film quality and most importantly, the light emission properties. All samples have a smooth surface (roughness < 1.5 nm), and the Ge films have a small tensile strain of 0.2%. As-grown P and As-doped Ge films have threading dislocaiton densities from 2.8e8 to 1.1e9 cm^(-2) without defect annealing. With thermal cycling, these values reduced to 1-1.5e8 cm^(-2). The six degree offcut of the Si substrate was shown to have little impact. In contrast to delta doping, the out-diffusion of dopants has been successfully suppressed to retain the doping concentration upon defect annealing. However, the photoluminescence intensity decreases mostly due to Si-Ge interdiffusion, which also causes a blue-shift in the emission wavelength. Compared to a benckmarking sample from the first Ge laser work doped by delta doping method in 2012, the as-grown P or As-doped Ge films have similar photoluminescence intensity at a 25% doping concentration and smoother surface, which are promising for Ge lasers with better light emission efficiencies.

cond-mat.mtrl-sci↗

arXiv2019

A wet etching method for few-layer black phosphorus with an atomic accuracy and compatibility with major lithography techniques

This paper reports a few-layer black phosphorus thickness pattern fabricated by a top-down nanofabrication approach. This was achieved by a new wet etching process that can etch selected regions of few-layer black phosphorus with an atomic layer accuracy. This method is deep-UV and e-beam lithography process compatible,and is free of oxygen and other common doping sources. It provides a feasible patterning approach for largescale manufacturing of few-layer BP materials and devices.

cond-mat.mtrl-sci↗

arXiv2018

Experiments and Modeling of Mass Transport Phenomena in SiGe Devices

Recent experiments and continuum modeling work on dopant diffusion and segregation, Si-Ge interdiffusion, and defect engineering in SiGe material systems are reviewed. Doping impact on Ge thin film quality and interdiffusion is also discussed. These are relevant to SiGe-based semiconductor devices including SiGe hetero-junction bipolar transistors, metal-oxidesemiconductor field-effect transistors, and Ge-on-Si based photonic devices.

cond-mat.mtrl-sci↗

arXiv2018

Interlayer coupling effect in twisted stacked few layer black phosphorus revealed by abnormal blue shifts in Raman spectra

Twisted stacked few layer black phosphorus heterostructures were successfully fabricated in this work. Abnormal blue shifts in their Ag1 and Ag2 Raman peaks and unique optical reflections were observed in these samples. The phonon behavior difference can be explained by our density functional theory calculations, which suggest that interlayer coupling has a significant effect in twisted bilayer black phosphorus. According to the calculations, the interlayer interactions are not simply van der Waals interactions. Additional interactions, such as weak valence bonding between the top and bottom flakes, are considered to be the cause of the blue shifts in their Raman spectra.

cond-mat.mtrl-sci↗

arXiv2017

Impacts of Doping on Epitaxial Germanium Thin Film Quality and Si-Ge Interdiffusion

Ge-on-Si structures with three different dopants (P, As and B) and those without intentional doping were grown and annealed. Several different materials characterization methods have been performed to characterize the Ge film quality. All samples have a smooth surface (roughness < 1.5 nm), and the Ge films are almost entirely relaxed. On the other hand, B doped Ge films have threading dislocations above 1 x 10^8 cm-2. While P and As doping can reduce the threading dislocation density to be less than 10^6 cm-2 without annealing. The interdiffusion of Si and Ge of different films have been investigated experimentally and theoretically. A quantitative model of Si-Ge interdiffusion under extrinsic conditions across the full x_Ge range and with the dislocation mediated diffusion term was established. The Kirkendall effect has been observed. The results are of technical significance for the structure, doping, and process design of Ge-on-Si based devices, especially for photonic applications.

cond-mat.mtrl-sci↗

arXiv2016

Study Of Si-Ge Interdiffusion With a High Phosphorus Doping Concentration

Si-Ge interdiffusion with a high phosphorus doping level was investigated by both experiments and modeling. Ge/Si1-xGex/Ge multi-layer structures with 0.75<x_Ge<1 , a mid-10^18 to low-10^19 cm-3 P doping and a dislocation density of 10^8 to 10^9 cm-2 range were studied. The P-doped sample shows an accelerated Si-Ge interdiffusivity, which is 2-8 times of that of the undoped sample. The doping dependence of the Si-Ge interdiffusion was modelled by a Fermi-enhancement factor. The results show that Si-Ge interdiffusion coefficient is proportional to n^2/n_i^2 for the conditions studied, which indicates that the interdiffusion in high Ge fraction range with n-type doping is dominated by V^(2-) defects. The Fermi-enhancement factor was shown to have a relatively weak dependence on the temperature and the Ge fraction. The results are relevant to structure and thermal processing condition design of n-type doped Ge/Si and Ge/SiGe based devices such as Ge/Si lasers.

cond-mat.mtrl-sci↗