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Xia Wen

Publications and source records attributed to Xia Wen.

2 recordsLinked to original sources

ODPure: Backdoor Purification for Object Detection via Ensemble Corruption Consensus

With the development of applications like autonomous driving, object detection has gained significant attention, while also highlighting critical vulnerabilities like backdoor attacks that severely compromise model integrity. Specifically, such attacks involve altering the categories of objects (i.e., object misclassification), removing bounding boxes (i.e., object disappearance), or generating bounding box proposals for non-existent objects (i.e., object generation) when a predefined trigger is present in the input. Although backdoor defenses for image classification are well-established, the research for object detection remains comparatively underexplored. Existing defenses address these threats by scanning outputs or models for potential backdoors but require discarding either malicious data or models. This remedy fails to enable a continuous and accurate perceptual stream for the object detection pipeline. To address such limitations, we propose ODPure, a novel input-stage black-box defense for object detection, which is based on input purification that ensures stable perception flows. Tailored to the dense prediction nature of object detectors, our Corruption-Reconstruction-Selection (CRS) paradigm operates by neutralizing triggers through a diverse portfolio of corruptions to generate a massive pool of redundant proposals, then recovering fine-grained structural cues via generative priors, and finally employing voting to reach a consensus on the resulting detections. Comprehensive experiments demonstrate that our method provides robust defense against diverse backdoor attacks and trigger types while preserving baseline accuracy. Our code is available at https://github.com/Alex66366/ODPure.

cs.CV↗

Fe-assisted epitaxial growth of 4-inch single-crystal transition-metal dichalcogenides on c-plane sapphire without miscut angle

Epitaxial growth and controllable doping of wafer-scale single-crystal transition-metal dichalcogenides (TMDCs) are two central tasks for extending Moore's law beyond silicon. However, despite considerable efforts, addressing such crucial issues simultaneously under two-dimensional (2D) confinement is yet to be realized. Here we design an ingenious epitaxial strategy to synthesize record-breaking 4-inch single-crystal Fe-doped TMDCs monolayers on industry-compatible c-plane sapphire without miscut angle. In-depth characterizations and theoretical calculations reveal that the introduction of Fe significantly decreases the formation energy of parallel steps on sapphire surfaces and contributes to the edge-nucleation of unidirectional TMDCs domains (>99%). The ultrahigh electron mobility (~86 cm2 V -1 s-1) and remarkable on/off current ratio (~108) are discovered on 4-inch single-crystal Fe-MoS2 monolayers due to the ultralow contact resistance and perfect Ohmic contact with metal electrodes. This work represents a substantial leap in terms of bridging the synthesis and doping of wafer-scale single-crystal 2D semiconductors without the need for substrate miscut, which should promote the further device downscaling and extension of Moore's law.

physics.app-ph↗