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Yilin Wang

Publications and source records attributed to Yilin Wang.

223 records · Page 13Linked to original sources
arXiv2012

Dynamical screening in strongly correlated metal SrVO3

The consequences of dynamical screening of Coulomb interaction among correlated electrons in realistic materials have not been widely considered before. In this letter we try to incorporate a frequency dependent Coulomb interaction into the state-of-the-art ab initio electronic structure computing framework of local density approximation plus dynamical mean-field theory, and then choose SrVO3 as a prototype material to demonstrate the importance of dynamical screening effect. It is shown to renormalise the spectral weight near the Fermi level, to increase the effective mass, and to suppress the t2g quasiparticle band width apparently. The calculated results are in accordance with very recent angle-resolved photoemission spectroscopy experiments and Bose factor ansatz calculations.

cond-mat.str-el↗
arXiv2012

Driven polymer translocation through a cylindrical nanochannel: Interplay between the channel length and the chain length

Using analytical techniques and Langevin dynamics simulations, we investigate the dynamics of polymer translocation through a nanochannel embedded in two dimensions under an applied external field. We examine the translocation time for various ratio of the channel length $L$ to the polymer length $N$. For short channels $L\ll N$, the translocation time $τ\sim N^{1+ν}$ under weak driving force $F$, while $τ\sim F^{-1}L$ for long channels $L\gg N$, independent of the chain length $N$. Moreover, we observe a minimum of translocation time as a function of $L/N$ for different driving forces and channel widths. These results are interpreted by the waiting time of a single segment.

cond-mat.soft↗
arXiv2011

Pressure-Driven Orbital Selective Insulator to Metal Transition and Spin State Crossover in Cubic CoO

The metal-insulator and spin state transitions of CoO under high pressure are studied by using density functional theory combined with dynamical mean-field theory. Our calculations predict that the metal-insulator transition in CoO is a typical orbital selective Mott transition, where the $t_{2g}$ orbitals of Co 3d shell become metallic firstly around 60 GPa while the $e_g$ orbitals still remain insulating until 170 GPa. Further studies of the spin states of Co 3d shell reveal that the orbital selective Mott phase in the intermediate pressure regime is mainly stabilized by the high-spin state of the Co 3d shell and the transition from this phase to the full metallic state is driven by the high-spin to low-spin transition of the Co$^{2+}$ ions. Our results are in good agreement with the most recent transport and x-ray emission experiments under high pressure.

cond-mat.str-el↗
arXiv2011

Landau quantization and the thickness limit of topological insulator thin films of Sb2Te3

We report the experimental observation of Landau quantization of molecular beam epitaxy grown Sb2Te3 thin films by a low-temperature scanning tunneling microscope. Different from all the reported systems, the Landau quantization in Sb2Te3 topological insulator is not sensitive to the intrinsic substitutional defects in the films. As a result, a nearly perfect linear energy dispersion of surface states as 2D massless Dirac fermion system is achieved. We demonstrate that 4 quintuple layers are the thickness limit for Sb2Te3 thin film being a 3D topological insulator. The mechanism of the Landau level broadening is discussed in terms of enhanced quasiparticle lifetime.

cond-mat.mtrl-sci↗
arXiv2011

Fermi Level Tuning of Epitaxial Sb2Te3 Thin Films on Graphene by Regulating Intrinsic Defects and Substrate Transfer Doping

High-quality Sb2Te3 films are obtained by molecular beam epitaxy on graphene substrate and investigated by in situ scanning tunneling microscopy/spectroscopy. Intrinsic defects responsible for the natural p-type conductivity of Sb2Te3 are identified to be the Sb vacancies and SbTe antisites in agreement with first-principles calculations. By minimizing defect densities, coupled with a transfer doping by the graphene substrate, the Fermi level of Sb2Te3 thin films can be tuned over the entire range of the bulk band gap. This establishes the necessary condition to explore topological insulator behaviors near the Dirac point.

cond-mat.mtrl-sci↗
arXiv2010

Landau Quantization of Massless Dirac Fermions in Topological Insulator

The recent theoretical prediction and experimental realization of topological insulators (TI) has generated intense interest in this new state of quantum matter. The surface states of a three-dimensional (3D) TI such as Bi_2Te_3, Bi_2Se_3 and Sb_2Te_3 consist of a single massless Dirac cones. Crossing of the two surface state branches with opposite spins in the materials is fully protected by the time reversal (TR) symmetry at the Dirac points, which cannot be destroyed by any TR invariant perturbation. Recent advances in thin-film growth have permitted this unique two-dimensional electron system (2DES) to be probed by scanning tunneling microscopy (STM) and spectroscopy (STS). The intriguing TR symmetry protected topological states were revealed in STM experiments where the backscattering induced by non-magnetic impurities was forbidden. Here we report the Landau quantization of the topological surface states in Bi_2Se_3 in magnetic field by using STM/STS. The direct observation of the discrete Landau levels (LLs) strongly supports the 2D nature of the topological states and gives direct proof of the nondegenerate structure of LLs in TI. We demonstrate the linear dispersion of the massless Dirac fermions by the square-root dependence of LLs on magnetic field. The formation of LLs implies the high mobility of the 2DES, which has been predicted to lead to topological magneto-electric effect of the TI.

cond-mat.mes-hall↗