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Yueqian Chen

Publications and source records attributed to Yueqian Chen.

2 recordsLinked to original sources

Orbital-engineered px,y-kagome lattice in a halogen monolayer

Multi-orbital kagome lattices with explicit orbital degrees of freedom remain largely unexplored, as most experimentally realized systems rely on complex d-electron manifolds that are approximated by isotropic single-orbital models. Here, we overcome this limitation by realizing a px,y-orbital kagome lattice through deposition of a Br monolayer on Ag(111), where orbital filtering selectively suppresses the pz channel. Scanning tunneling microscopy, angle-resolved photoemission spectroscopy, and density-functional-theory calculations reveal a large-area, highly ordered kagome structure whose band dispersions quantitatively match the anisotropic px,y tight-binding model. To extract the intrinsic manifold from the substrate background, we construct an effective H-passivated model, which uncover the intrinsic electronic structure and reveals nontrivial topological characteristics of the px,y kagome manifold driven by first-order spin-orbit coupling effect. Our work establishes Br/Ag(111) as an experimentally accessible platform for multi-orbital kagome physics, extending the kagome paradigm from the conventional d-orbital regime to an orbitally engineered topological setting.

cond-mat.mtrl-sci↗

Nonvolatile photoswitching of a Mott state via reversible stacking rearrangement

Nonvolatile control of the Mott transition is a central goal in correlated-electron physics, offering access to fascinating emergent states and great potential for technological applications. Compared to chemical or mechanical approaches, ultrafast optical excitation further promises a path to create and manipulate novel non-equilibrium phases with ultimate spatiotemporal precision. However, achieving a truly nonvolatile electronic phase transition in laser-excited Mott systems remains an elusive challenge. Here, we present a highly robust and reversible method for optical control of the Mott state in van der Waals systems. Specifically, using angle-resolved photoemission spectroscopy, we observe a nonvolatile Mott-to-metallic transition in the ultrafast laser-excited charge density wave (CDW) material 1T-TaSe2. Complementary theoretical calculations reveal that this transition originates from a rearrangement of the interlayer CDW stacking. This new stacking order, formed following the ultrafast quenching of the CDW, circumvents the need for large-scale atomic sliding. Intriguingly, it introduces a significant in-plane component to the electron hopping and effectively reduces the ratio of on-site Coulomb interaction to bandwidth, thereby suppressing the Mott state and stabilizing a metallic phase. Our results establish optical-control of interlayer stacking as a versatile strategy for inducing nonvolatile phase transitions, opening a new route to tailor correlated electronic phases and realize reconfigurable high-frequency devices.

cond-mat.str-el↗