Search arXivSearch

arXiv subjects

Zhiguo Liu

Publications and source records attributed to Zhiguo Liu.

9 recordsLinked to original sources

A Real-Calibrated Synthetic-First Data Engine

Modern computer vision systems increasingly encounter performance limitations in data-scarce domains, where collecting large-scale, high-quality labeled data is costly or impractical. While controllable diffusion models enable scalable synthetic image generation, directly applying synthetic augmentation often leads to unstable performance gains due to dataset-level quality issues and insufficient feedback mechanisms. In this work, we present a Real-Calibrated Synthetic-First Data Engine, a modular data engineering framework that combines controllable diffusion generation and multi-stage curation/filtering within a unified pipeline, with optional support for uncertainty-driven selection and human verification. Instead of introducing new generative algorithms, our approach focuses on systematic dataset construction for improving the practical reliability of synthetic augmentation in low-data regimes. The framework is implemented as a modular CLI-based pipeline, where generation, filtering, selection, and validation components can be independently configured and replaced. This design emphasizes reproducibility, flexibility, and practical deployment in real-world data workflows. Through empirical evaluation centered on human pose estimation, we show that synthetic data improves a real-data baseline when used as near-zero-human-annotation-cost augmentation alongside real anchors, while synthetic-only training remains substantially below real-only performance. Supplementary segmentation diagnostics show the same domain-gap pattern. These results highlight the practical value of data-centric orchestration for low-data augmentation.

eess.IV

Highly anisotropic nonrelativistic charge-to-spin conversion in altermagnets

The charge-to-spin conversion provides an efficient way to manipulate the magnetization by electrical means. In this work, we report on a study on the anisotropic nonrelativistic charge-to-spin conversion response to the current direction in altermagnets. We prove that the spin conductivity dictating the charge-to-spin conversion is equivalent to the spin-polarized conductivity difference in the nonrelativistic limit. Based on the general spin-group analysis, we derive analytical expressions for the anisotropic conversion ratio and identify its maximum value. We then exemplify those phenomena in representative altermagnets based on the density functional theory calculations. The highly anisotropic charge-to-spin conversion efficiency, varying from zero to several tens of percent, was demonstrated. Our work shines more light on the exploration of the nonrelativistic generation of spin currents in altermagnets.

cond-mat.other

New proofs of theorems on q-orthogonal functions

In this paper, we establish a $q$-integral formula by using the orthogonality relation, and also provide a new proof of the $q$-orthogonality relation for the continuous $q$-ultraspherical polynomials. A new $q$-beta integral with five parameters is evaluated.

math.CA

Digital Transformation of High Voltage Isolation Control and Monitoring System for HVE-400 Ion Implanter

HVE-400 ion implanter is special ion implantation equipment for semiconductor materials boron and phosphorus doping. The ion source and extraction deflection system are at high voltage platform, while the corresponding control system is at ground voltage position. The control signals and measurement signals of various parameters at the high-voltage end need to be transmitted between ground voltage and high voltage through optical fibers to isolate high voltage. Upgrading is carried out due to the aging of the optical fiber transmission control and monitoring system, which cannot work stably. The transformation replaces the original distributed single-point control method with an advanced distributed centralized control method, and integrates all control and monitoring functions into an industrial control computer for digital operation and display. In the computer software, two kinds of automatic calculation of ion mass number are designed. After upgrading, the implanter high-voltage platform control and monitoring system features digitalization, centralized control, high reliability, strong anti-interference, fast communication speed, and easy operation.

physics.ins-det

Improvements in Micro-CT Method for Characterizing X-ray Monocapillary Optics

Accurate characterization of the inner surface of X-ray monocapillary optics (XMCO) is of great significance in X-ray optics research. Compared with other characterization methods, the micro computed tomography (micro-CT) method has its unique advantages but also has some disadvantages, such as a long scanning time, long image reconstruction time, and inconvenient scanning process. In this paper, sparse sampling was proposed to shorten the scanning time, GPU acceleration technology was used to improve the speed of image reconstruction, and a simple geometric calibration algorithm was proposed to avoid the calibration phantom and simplify the scanning process. These methodologies will popularize the use of the micro-CT method in XMCO characterization.

physics.ins-det

Quasi-parallel X-ray microbeam obtained using a parabolic monocapillary X-ray lens with an embedded square-shaped lead occluder

A parabolic monocapillary X-ray lens (PMXRL) is designed to effectively constrain a laboratory point X-ray source into a parallel beam. A square-shaped lead occluder (SSLO) is used to block direct X-rays in the PMXRL. To design the PMXRL, we use Python to simulate the conic parameter (p = 0.001 mm) of the lens and then use a drawing machine to draw a corresponding lens (p = 0.000939 mm) with a total length of 60.8 mm. We place the SSLO at the lens inlet for optical testing. The results show that the controlled outgoing beam has a divergence of less than 0.4 mrad in the range of 15-45 mm of the lens outlet, which achieves excellent optical performance in X-ray imaging methodology. The design details are reported in this paper.

physics.optics

A Se vacancy induced localized Raman mode in two-dimensional MoSe2 grown by CVD

Defects play a significant role in optical properties of semiconducting two-dimensional transition metal dichalcogenides (TMDCs). In ultra-thin MoSe2, a remarkable feature at ~250 cm-1 in Raman spectra is ascribed to be a defect-related mode. Recent attempts failed to explain the origin of this peak, leaving it being a mystery. Here in this work, we demonstrate that this peak is a Se vacancy induced defect mode. Heat effect and hydrogen etching are two main factors to introduce Se vacancies in CVD process of growing MoSe2. A phonon confinement model can well explain the behaviors of intrinsic Raman modes. Density functional theory (DFT) calculation reveals that single Se vacancy (VSe) is responsible for the appearance of Raman peak at ~250 cm-1 and this mode is an A1g-like localized mode which is also confirmed by polarized Raman scattering experiment. The relative strength of this mode can be a characterization of the quality of 2D MoSe2. This work may offer a simple method to tailor chalcogenide vacancies in 2D TMDCs and provide a way to study their vibrational properties.

cond-mat.mtrl-sci

Robust Dirac Point in Honeycomb Structure Nanoribbons with Zigzag Edges

The zigzag edge graphene nanoribbon, which is an antiferromagnetic insulator, is found from the density-function theory calculation to display a robust Dirac point after N and B doping at the zigzag edge. More interestingly, we found that the robust Dirac point is a common feature of the honeycomb structure nanoribbon with appropriate edge sites. The zigzag edge honeycomb nanoribbon is therefore expected to provide a very useful platform for material design and development.

cond-mat.mes-hall

Unipolar Resistance Switching in Amorphous High-k dielectrics Based on Correlated Barrier Hopping Theory

We have proposed a kind of nonvolatile resistive switching memory based on amorphous LaLuO3, which has already been established as a promising candidate of high-k gate dielectric employed in transistors. Well-developed unipolar switching behaviors in amorphous LaLuO3 make it suited for not only logic but memory applications using the conventional semiconductor or the emerging nano/CMOS architectures. The conduction transition between high- and low- resistance states is attributed to the change in the separation between oxygen vacancy sites in the light of the correlated barrier hopping theory. The mean migration distances of vacancies responsible for the resistive switching are demonstrated in nanoscale, which could account for the ultrafast programming speed of 6 ns. The origin of the distributions in switching parameters in oxides can be well understood according to the switching principle. Furthermore, an approach has also been developed to make the operation voltages predictable for the practical applications of resistive memories.

cond-mat.mtrl-sci