arXiv subjects

Zhong Yan

Publications and source records attributed to Zhong Yan.

5 recordsLinked to original sources

arXiv2026

Rubidium referenced Kerr comb with cavity phase matching

Phase matching is a fundamental problem in nonlinear optics that is normally constrained by material dispersion. The limited operation wavelengths within phase matching window limits the application, including the precise metrology using Kerr combs. Demanding applications like compact optical clock and astronomical spectroscopy requires atomic reference around 800 nm, where the natural phase matching is challenging. Here we revisit the concept of cavity phase matching (CPM), and fully reveal its advantage to engineer artificial phase matching beyond material dispersion. With the access of CPM condition in a monolithic high-Q fiber Fabry-Pérot resonator featuring a macroscopic cavity length, we achieve low noise Kerr comb generation around 800 nm, within the power budget of a single-mode laser diode. Inside a pump-integrated package of 19 cm3, low phase noise of -125 dBc/Hz at 100 kHz offset frequency is achieved for a 10.1 GHz repetition rate. Most importantly, the generated Kerr comb has been directly referenced to rubidium atomic transition for long-term stable operation. This result not only opens a new way for Kerr comb generation at arbitrary wavelengths, but also can be generalized to any other nonlinear optical frequency conversion application.

physics.optics↗

arXiv2026

Optically locked low-noise photonic microwave oscillator

The next-generation sensing and communication applications rely on high-frequency microwave generation with low-noise. The microwave photonic technology is promising by the practical application is limited by its complex architecture so far. Here, we demonstrate an optically locked low-noise photonic microwave oscillator, so that all the optical components are packaged within a small module of 166 mL, and low noise microwave generation is achieved at 10.4 GHz with single-sideband phase noise of -54 dBc/Hz at 10 Hz, -141 dBc/Hz at 10 kHz, and -162 dBc/Hz at 10 MHz offset. Above performance arises from a dual-laser self-injection-locking scheme to a single Fabry-Perot cavity with high Q exceeding 10^8, with over 20 dB common-mode noise suppression. The low-noise nature of such reference is coherently transferred to the X-band through a high-performance TFLN electro-optic comb chip, thereby overcoming long-standing barriers in photonic microwave integration to enable truly field-deployable low-noise microwave generation.

physics.optics↗

arXiv2025

High-gain optical parametric amplification with a continuous-wave pump using a domain-engineered thin-film lithium niobate waveguide

While thin film lithium niobate (TFLN) is known for efficient signal generation, on-chip signal amplification remains challenging from fully integrated optical communication circuits. Here we demonstrate the continuous-wave-pump optical parametric amplification (OPA) using an x-cut domain-engineered TFLN waveguide, with high gain over the telecom band up to 13.9 dB, and test it for high signal-to-noise ratio signal amplification using a commercial optical communication module pair. Fabricated in wafer scale using common process as devices including modulators, this OPA device marks an important step in TFLN photonic integration.

physics.optics↗

arXiv2015

Review of Thermal Properties of Graphene and Few-Layer Graphene: Applications in Electronics

We review thermal properties of graphene and few-layer graphene, and discuss applications of these materials in thermal management of advanced electronics. The intrinsic thermal conductivity of graphene - among the highest of known materials - is dominated by phonons near the room temperature. The examples of thermal management applications include the few-layer graphene heat spreaders integrated near the heat generating areas of the high-power density transistors. It has been demonstrated that few-layer graphene heat spreaders can lower the hot-spot temperature during device operation resulting in improved performance and reliability of the devices.

cond-mat.mes-hall↗

arXiv2012

Graphene-Graphite Quilts for Thermal Management of High-Power GaN Transistors

Self-heating is a severe problem for high-power GaN electronic and optoelectronic devices. Various thermal management solutions, e.g. flip-chip bonding or composite substrates have been attempted. However, temperature rise still limits applications of the nitride-based technology. Here we demonstrate that thermal management of GaN transistors can be substantially improved via introduction of the alternative heat-escaping channels implemented with few-layer graphene - an excellent heat conductor. We have transferred few-layer graphene to AlGaN/GaN heterostructure field-effect transistors on SiC substrates to form the "graphene-graphite quilts" - lateral heat spreaders, which remove heat from the channel regions. Using the micro-Raman spectroscopy for in-situ monitoring we have shown that temperature can be lowered by as much as ~ 20oC in such devices operating at ~13-W/mm power density. The simulations suggest that the efficiency of the "graphene quilts" can be made even higher in GaN devices on thermally resistive sapphire substrates and in the designs with the closely located heat sinks. Our results open a novel application niche for few-layer graphene in high-power electronics.

cond-mat.mtrl-sci↗