Search arXiv⌕ Search
Home/Archive/arXiv

arXiv · 0704.1903

Growth window and possible mechanism of millimeter-thick single-walled carbon nanotube forests

Kei Hasegawa·Suguru Noda·Hisashi Sugime·Kazunori Kakehi·Shigeo Maruyama·Yukio Yamaguchi
View original source ↗Read source document ↗Export metadata ↓

Abstract

Our group recently reproduced the water-assisted growth method, so-called "super growth", of millimeter-thick single-walled carbon nanotube (SWNT) forests by using C2H4/ H2/ H2O/ Ar reactant gas and Fe/ Al2O3 catalyst. In this current work, a parametric study was carried out on both reaction and catalyst conditions. Results revealed that a thin Fe catalyst layer (about 0.5 nm) yielded rapid growth of SWNTs only when supported on Al2O3, and that Al2O3 support enhanced the activity of Fe, Co, and Ni catalysts. The growth window for the rapid SWNT growth was narrow, however. Optimum amount of added H2O increased the SWNT growth rate but further addition of H2O degraded both the SWNT growth rate and quality. Addition of H2 was also essential for rapid SWNT growth, but again, further addition decreased both the SWNT growth rate and quality. Because Al2O3 catalyzes hydrocarbon reforming, Al2O3 support possibly enhances the SWNT growth rate by supplying the carbon source to the catalyst nanoparticles. The origin of the narrow window for rapid SWNT growth will also be discussed.

Explore related subjects

cond-mat.mtrl-sci

Keep this discovery

Explore connections, maps & timelines

BibTeXRIS

Kei Hasegawa, Suguru Noda, Hisashi Sugime, Kazunori Kakehi, Shigeo Maruyama, Yukio Yamaguchi. 2007-04-15. Growth window and possible mechanism of millimeter-thick single-walled carbon nanotube forests. https://arxiv.org/abs/0704.1903

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

arXiv2026

Bond-selective modulation of scalar spin chirality in strained Mn4N

Scalar spin chirality (SSC) underlies a variety of Berry-phase-driven transport phenomena in noncoplanar magnets. Mn4N is a unique ferrimagnetic system in which both collinear and noncoplanar magnetic configurations have been reported at different lattice parameters, featuring vanishing and finite SSC, respectively. However, the microscopic mechanism governing the competition between these magnetic states and the associated modulation of SSC remains unclear. This issue is particularly important for Mn4N because its high magnetic ordering temperature (TN = 740 K) provides an attractive platform for exploring chiral magnetic states and their associated topological functionalities at elevated temperatures. Here, using first-principles calculations, we investigate the strain-driven evolution of the magnetic ground state and SSC in Mn4N and uncover the microscopic origin of the collinear-to-noncoplanar magnetic transition. We demonstrate that tensile strain continuously stabilizes the noncoplanar configuration and enhances SSC, as quantified by the magnitude of the chirality-order vector. Orbital-resolved crystal orbital Hamilton population and charge-density-difference analyses reveal that strain selectively weakens the Mn3c-N hybridization while preserving direct Mn3c-Mn3c interactions, leading simultaneously to the activation of the Mn3c in-plane magnetic moment and the suppression of N-mediated ferromagnetic superexchange between nearest-neighbor Mn3c atoms. This bond-selective electronic response governs the magnetic ground state and consequently controls the emergence and enhancement of SSC in Mn4N. Our work establishes bond selectivity as an effective strategy for engineering SSC in high-temperature ferrimagnetic materials.

cond-mat.mtrl-sci↗
arXiv2026

Ab Initio Spinor Kadanoff-Baym Approach to Nonequilibrium Electron, Phonon and Magnon Dynamics in Itinerant Ferromagnets

This work introduces a theoretical framework based on the Kadanoff-Baym equations in spinor space to study ultrafast magnetization dynamics in itinerant ferromagnetic systems from first principles. By incorporating spin-orbit coupling into the ab initio Hamiltonian and generalizing the self-energies to include terms beyond the charge sector, I derive scattering integrals within the Markov approximation and quasiparticle renormalizations for electrons and phonons in the presence of spin-dependent effective interactions within a many-body perturbation theory approach. I explicitly discuss how magnons emerge in this framework, and derive, through suitable approximations, a closed and tractable set of equations for coupled electron, phonon and magnon dynamics that can be solved from first principles. I discuss the equations of motion within a minimal ferromagnetic model, where the coupled equations are solved numerically. This approach allows one to treat coherent and incoherent magnetic dynamics on an equal footing, paving the way for a first principles understanding of ultrafast magnetic dynamics and demagnetization, and opening to a truly predictive theory of femtomagnetism in periodic systems.

cond-mat.mtrl-sci↗
arXiv2026

On the physical origins of switching diversity in Cu-embedded SiO$_x$ memristive devices

Resistive switching devices with sub-stoichiometric SiO$_x$ and pancake-like Cu nanoparticles (Cu-PCs) exhibit distinct macroscopic current-voltage characteristics classified as capacitive or gradual (interface-type switching) and abrupt or resistive (filamentary-type switching), motivating an analysis of the microscopic processes underlying this diversity. It is proposed that the device defect landscape is largely shaped by two charged defect types, mobile oxygen vacancies and immobile Cu-related defects, whose distributions jointly govern interfacial and bulk transport. An effective one-dimensional cloud-in-a-cell simulation framework is employed to reproduce the phenomenological picture of both interface-type and filamentary-type switching by incorporating the dominant coupled ionic and electronic processes underlying these mechanisms. The model includes oxygen-vacancy drift-diffusion, Schottky-limited injection at the metal/oxide interfaces, and bulk trap-assisted transport via Poole-Frenkel conduction, with Cu-PCs near the top interface treated effectively. A simulation-based parametric study varying voltage stress, sweep rate, and oxide thickness is used to examine how these factors rebalance voltage partitioning and the spatiotemporal electric field distribution, thereby altering vacancy redistribution and the relative contributions of interface- and bulk-limited conduction. Using representative, physically motivated parameter sets informed by prior device-level studies, the simulations accurately reproduce the characteristic $I$-$V$ signatures of seven different experimentally observed switching responses. Overall, the findings help to link microscopic defect landscapes and transport processes to experimentally measured macroscopic responses within a single, self-consistent modeling framework.

cond-mat.mtrl-sci↗