Search arXiv⌕ Search

arXiv · 0706.0094

Mean field theory of spin glasses: statics and dynamics

Abstract

In these lectures I will review some theoretical results that have been obtained for spin glasses. I will concentrate my attention on the formulation of the mean field approach and on its numerical and experimental verifications. I will present the various hypothesis at the basis of the theory and I will discuss their mathematical and physical status.

Explore related subjects

Keep this discovery

Explore connections, maps & timelines

BibTeXRIS

Giorgio Parisi. 2007-06-01. Mean field theory of spin glasses: statics and dynamics. https://arxiv.org/abs/0706.0094

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

Boundary shape controls the stress distribution in two-component elastic materials

We investigate how the shape and arrangement of high-stiffness regions govern stress redistribution in two-component triangular elastic spring networks subjected to spatially correlated and uncorrelated random prestress. We compare boundary roughness, partitioning into disconnected regions, and graded transitions between regions of different stiffness. Our simulations identify interface bonds as channels for energy transfer: increasing their number provides additional transfer paths and reduces stress concentration in mechanically rigid regimes, while offering little benefit in compliant subnetworks. This is analogous to defects in naturally occurring crystal structures, where the defects themselves isolate stress. At a fixed fraction of high-stiffness material, partitioning reduces stress concentration for both correlated and uncorrelated prestress. The benefit diminishes with further subdivision as the number of interface bonds becomes comparable to the number of interior nodes. Stress reduction, however, depends on the spatial correlations of the imposed prestress: random prestress generally yields a stronger effect, though the difference diminishes in some regimes. Graded interfaces further reduce peak stress by distributing the stiffness transition over a broader region. Together, these results suggest design strategies based on increasing interface area, matching subdivision scale to prestress correlations, and grading stiffness transitions. This minimal framework identifies how internal structure controls energy transfer and stress redistribution, suggesting design principles for mechanical robustness under both internal and external loading.

cond-mat.dis-nn↗

Symmetry-Preserving Local Representation for Short-Range Interaction in Complex Materials

Modeling short-range interactions in highly disordered materials remains challenging due to the immense configuration space and the disruption of local symmetry in truncated theoretical models. Here, we propose a symmetry-preserving local representation framework that strictly enforces topological continuity and translational invariance via boundary passivation. Applied to high-entropy alloys, this approach autonomously unravels the nonlinear ligand effects modulating local reactivity and accurately captures coverage-dependent many-body interactions without explicit periodic expansion. By resolving the conflict between localized chemical environments and extended periodic boundaries, this framework not only reduces computational complexity by an order of magnitude but also provides a physically transparent paradigm for deciphering short-range order in complex condensed matter systems.

cond-mat.dis-nn↗

Localization Contrast As a Fundamental Limit of Radiative Quantum Efficiency

Disorder can localize valence- and conduction-band states to different degrees, yet whether such localization contrast has observable consequences remains poorly understood. Here, we show that localization contrast strongly impacts competing carrier-recombination channels. We illustrate this behavior in random In$_x$Ga$_{1-x}$N alloys. Increasing the In content from $x=13.5\%$ to $x=22\%$ progressively localizes the valence-band maximum state while leaving the conduction-band minimum state comparatively delocalized. This contrasting localization decreases the interband optical momentum matrix element underlying radiative recombination. For Auger-Meitner recombination, however, localization alone does not determine the coupling; atomic-scale disorder also breaks primitive-cell translational symmetry and modifies the momentum-space and phase structure of the states. This generates additional low-$Q$ components and enhances the Auger coupling by more than five orders of magnitude relative to pristine GaN. Thus, we provide a microscopic explanation for the competing trends in radiative and Auger recombination. More broadly, our results establish localization contrast as a mechanism through which disorder can control optical and carrier-carrier interactions in semiconductors.

cond-mat.dis-nn↗