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arXiv · 0805.1394

Significant enhancement of hole mobility in [110] silicon nanowires compared to electrons and bulk silicon

A. K. Buin·A. Verma·A. Svizhenko·M. P Anantram
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Abstract

Utilizing sp3d5s* tight-binding band structure and wave functions for electrons and holes we show that acoustic phonon limited hole mobility in [110] grown silicon nanowires (SiNWs) is greater than electron mobility. The room temperature acoustically limited hole mobility for the SiNWs considered can be as high as 2500 cm2/Vs, which is nearly three times larger than the bulk acoustically limited silicon hole mobility. It is also shown that the electron and hole mobility for [110] grown SiNWs exceed that of similar diameter [100] SiNWs, with nearly two orders of magnitude difference for hole mobility. Since small diameter SiNWs have been seen to grow primarily along [110] direction, results strongly suggest that these SiNWs may be useful in future electronics. Our results are also relevant to recent experiments measuring SiNW mobility.

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A. K. Buin, A. Verma, A. Svizhenko, M. P Anantram. 2008-06-02. Significant enhancement of hole mobility in [110] silicon nanowires compared to electrons and bulk silicon. https://doi.org/10.1021/nl0727314

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