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arXiv · 0806.1510

Threshold fields for antiparallel ferroelectric domain wall motion

Samrat Choudhury·Yulan Li·Nozomi Odagawa·Aravind Vasudevarao·L. Tian·Pavel Capek·Volkmar Dierolf·Anna N. Morozovska·Eugene A. Eliseev·Long-qing Chen·Yasuo Cho·Sergei Kalinin·Venkatraman Gopalan
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Abstract

While an ideal antiparallel ferroelectric wall is considered a unit cell in width (~0.5nm), we show using phase field modeling that the threshold field for moving this wall dramatically drops by 2-3 orders of magnitude if the wall were diffuse by only ~2-3nm. Since antiparallel domain walls are symmetry allowed in all ferroelectrics, and since domain wall broadening on nanometer scale is widely reported in literature, this mechanism is generally applicable to all ferroelectrics.

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Samrat Choudhury, Yulan Li, Nozomi Odagawa, Aravind Vasudevarao, L. Tian, Pavel Capek, Volkmar Dierolf, Anna N. Morozovska, Eugene A. Eliseev, Long-qing Chen, Yasuo Cho, Sergei Kalinin, Venkatraman Gopalan. 2008-06-09. Threshold fields for antiparallel ferroelectric domain wall motion. https://arxiv.org/abs/0806.1510

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