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arXiv · 0806.2295

Strain-Induced Conduction Band Spin Splitting in GaAs from First Principles Calculations

Athanasios N. Chantis·Manuel Cardona·Niels E. Christensen·Darryl L. Smith·Mark van Schilfgaarde·Takao Kotani·Axel Svane·Robert C. Albers
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Abstract

We use a recently developed self-consistent GW approximation to present first principles calculations of the conduction band spin splitting in GaAs under [110] strain. The spin orbit interaction is taken into account as a perturbation to the scalar relativistic hamiltonian. These are the first calculations of conduction band spin splitting under deformation based on a quasiparticle approach; and because the self-consistent GW scheme accurately reproduces the relevant band parameters, it is expected to be a reliable predictor of spin splittings. We also discuss the spin relaxation time under [110] strain and show that it exhibits an in-plane anisotropy, which can be exploited to obtain the magnitude and sign of the conduction band spin splitting experimentally.

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Athanasios N. Chantis, Manuel Cardona, Niels E. Christensen, Darryl L. Smith, Mark van Schilfgaarde, Takao Kotani, Axel Svane, Robert C. Albers. 2008-06-26. Strain-Induced Conduction Band Spin Splitting in GaAs from First Principles Calculations. https://doi.org/10.1103/physrevb.78.075208

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