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arXiv · 0809.0578

Band bending and quasi-2DEG in the metallized $β$-SiC(001) surface

R. Rurali·E. Wachowicz·P. Hyldgaard·P. Ordejón
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Abstract

We study the mechanism leading to the metallization of the $β$-SiC(001) Si-rich surface induced by hydrogen adsorption. We analyze the effects of band bending and demonstrate the existence of a quasi-2D electron gas, which originates from the donation of electrons from adsorbed hydrogen to bulk conduction states. We also provide a simple model that captures the main features of the results of first-principles calculations, and uncovers the basic physics of the process.

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R. Rurali, E. Wachowicz, P. Hyldgaard, P. Ordejón. 2008-09-03. Band bending and quasi-2DEG in the metallized $β$-SiC(001) surface. https://doi.org/10.1002/pssr.200802166

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