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arXiv · 0809.5099

Mobility in Graphene Double Gate Field Effect Transistors

M. C. Lemme·T. J. Echtermeyer·M. Baus·B. N. Szafranek·J. Bolten·M. Schmidt·T. Wahlbrink·H. Kurz
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Abstract

In this work, double-gated field effect transistors manufactured from monolayer graphene are investigated. Conventional top-down CMOS-compatible processes are applied except for graphene deposition by manual exfoliation. Carrier mobilities in single- and double gated graphene field effect transistors are compared. Even in double-gated graphene FETs, the carrier mobility exceeds the universal mobility of silicon over nearly the entire measured range. At comparable dimensions, reported mobilities for ultra thin body silicon-on-insulator MOSFETs can not compete with graphene FET values.

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M. C. Lemme, T. J. Echtermeyer, M. Baus, B. N. Szafranek, J. Bolten, M. Schmidt, T. Wahlbrink, H. Kurz. 2008-09-30. Mobility in Graphene Double Gate Field Effect Transistors. https://doi.org/10.1016/j.sse.2007.10.054

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