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arXiv · 0810.4272

Polarization dependent interface properties of ferroelectric Schottky barriers studied by soft X-ray absorption spectroscopy

H. Kohlstedt·A. Petraru·M. Meier J. Denlinger·J. Guo·Y. Wanli·A. Scholl·B. Freelon·T. Schneller·R. Waser·P. Yu·R. Ramesh·T. Learmonth·P. -A. Glans·K. E. Smith
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Abstract

We applied soft X-ray absorption spectroscopy to study the Ti L-edge in ferroelectric capacitors using a modified total electron yield method. The inner photo currents and the X-ray absorption spectra were polarization state dependent. The results are explained on the basis of photo electric effects and the inner potential in the ferroelectric capacitors as a result of back-to-back Schottky barriers superimposed by the potential due to the depolarization field. In general, the presented method offers the opportunity to investigate the electronic structure of buried metal-insulator and metal-semiconductor interfaces in thin film devices. Corresponding author: h.h.kohlstedt@fz-juelich.de

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H. Kohlstedt, A. Petraru, M. Meier J. Denlinger, J. Guo, Y. Wanli, A. Scholl, B. Freelon, T. Schneller, R. Waser, P. Yu, R. Ramesh, T. Learmonth, P. -A. Glans, K. E. Smith. 2008-10-23. Polarization dependent interface properties of ferroelectric Schottky barriers studied by soft X-ray absorption spectroscopy. https://arxiv.org/abs/0810.4272

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