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arXiv · 0901.0145

Direct Measurement of Piezoelectric Response around Ferroelectric Domain Walls in Crystals with Engineered Domain Configuration

Haiyan Guo·Alexei A. Bokov·Zuo-Guang Ye
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Abstract

We report the first investigation of the piezoelectric response on a nanoscale in the poled ferroelectric crystals with engineered configuration of domains. Piezoresponse force microscopy of tetragonal 0.63PMN-0.37PT relaxor-based ferroelectric crystals reviled that the d33 piezoelectric coefficient is significantly reduced within the distance of about 1 um from the uncharged engineered domain wall. This finding is essential for understanding the mechanisms of the giant piezoresponse in relaxor-based crystals and for designing new piezoelectric materials.

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Haiyan Guo, Alexei A. Bokov, Zuo-Guang Ye. 2008-12-31. Direct Measurement of Piezoelectric Response around Ferroelectric Domain Walls in Crystals with Engineered Domain Configuration. https://doi.org/10.1103/physrevb.81.024114

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