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arXiv · 0906.4495

Defect induced rigidity enhancement in layered semiconductors

Zs. Rak·S. D. Mahanti·K. C. Mandal·N. C. Fernelius
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Abstract

We discuss the mechanism responsible for the observed improvement in the structural properties of In doped GaSe, a layered material of great current interest. Formation energy calculations show that by tuning the Fermi energy, In can substitute for Ga or can go as an interstitial charged defect$(\text{In}_{\text{i}}^{\text{3+}})$. We find that $\text{In}_{\text{i}}^{\text{3+}}$ dramatically increases the shear stiffness of GaSe, explaining the observed enhancement in the rigidity of In doped p-GaSe. The mechanism responsible for rigidity enhancement discussed here is quite general and applicable to a large class of layered solids with weak interlayer bonding.

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Zs. Rak, S. D. Mahanti, K. C. Mandal, N. C. Fernelius. 2009-06-24. Defect induced rigidity enhancement in layered semiconductors. https://doi.org/10.1016/j.ssc.2010.04.011

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