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arXiv · 0908.0063

Phosphorous alloying: controlling the magnetic anisotropy in ferromagnetic (Ga,Mn)(As,P) Layers

M. Cubukcu·H. J. von Bardeleben·Kh. Khazen·J. L. Cantin·O. Mauguin·L. Largeau·A. Lemaitre
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Abstract

Phosphorous alloying of GaMnAs thin films has been used for the manipulation of the magnetic anisotropies in ferromagnetic Ga0.93Mn0.07As1-yPy layers. We have determined the anisotropy constants as a function of temperature for phosphorous alloying levels between 0 and 8.8 at % for a Mn doping level of ~ 7at%. We show that it is possible to obtain layers with robust ferromagnetism and either in-plane or out-of plane easy axes with small barriers for magnetization reorientation by phosphorous alloying with y< 6at% or y> 6at%. The critical temperatures are not significantly increased by the P alloying.

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M. Cubukcu, H. J. von Bardeleben, Kh. Khazen, J. L. Cantin, O. Mauguin, L. Largeau, A. Lemaitre. 2009-08-10. Phosphorous alloying: controlling the magnetic anisotropy in ferromagnetic (Ga,Mn)(As,P) Layers. https://arxiv.org/abs/0908.0063

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