Spin torque and charge resistance of ferromagnetic semiconductor $2π$ and $π$ domain walls

E. A. Golovatski; M. E. Flatté

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arXiv · 0909.3831

Spin torque and charge resistance of ferromagnetic semiconductor $2π$ and $π$ domain walls

E. A. Golovatski·M. E. Flatté

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Abstract

Charge resistance and spin torque are generated by coherent carrier transport through ferromagnetic 360 degree domain walls, although they follow qualitatively different trends than for 180 degree domain walls. The charge resistance of 360 degree domain walls reaches a maximum at an intermediate wall thickness, unlike 180 degree domain walls, whose resistance decreases monotonically with wall thickness. The peak amplitude of the spin torque and the optimal thickness of the domain wall to maximize torque for a 360 degree wall are more than twice as large as found for a 180 degree domain wall in the same material, producing a larger domain wall velocity for the 360 degree wall and suggesting unexpected nonlinearities in magnetoelectronic devices incorporating domain wall motion.

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E. A. Golovatski, M. E. Flatté. 2009-09-21. Spin torque and charge resistance of ferromagnetic semiconductor $2π$ and $π$ domain walls. https://arxiv.org/abs/0909.3831

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