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arXiv · 1002.0775

Directed self-organization of graphene nanoribbons on SiC

M. Sprinkle·M. Ruan·X. Wu·Y. Hu·M. Rubio-Roy·J. Hankinson·N. K. Madiomanana·C. Berger·W. A. de Heer
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Abstract

Realization of post-CMOS graphene electronics requires production of semiconducting graphene, which has been a labor-intensive process. We present tailoring of silicon carbide crystals via conventional photolithography and microelectronics processing to enable templated graphene growth on 4H-SiC{1-10n} (n = 8) crystal facets rather than the customary {0001} planes. This allows self-organized growth of graphene nanoribbons with dimensions defined by those of the facet. Preferential growth is confirmed by Raman spectroscopy and high-resolution transmission electron microscopy (HRTEM) measurements, and electrical characterization of prototypic graphene devices is presented. Fabrication of > 10,000 top-gated graphene transistors on a 0.24 cm2 SiC chip demonstrates scalability of this process and represents the highest density of graphene devices reported to date.

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M. Sprinkle, M. Ruan, X. Wu, Y. Hu, M. Rubio-Roy, J. Hankinson, N. K. Madiomanana, C. Berger, W. A. de Heer. 2010-02-03. Directed self-organization of graphene nanoribbons on SiC. https://doi.org/10.1038/nnano.2010.192

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