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arXiv · 1003.4339

Electron Paramagnetic Resonance of Boron Acceptors in Isotopically Purified Silicon

H. Tezuka·A. R. Stegner·A. M. Tyryshkin·S. Shankar·M. L. W. Thewalt·S. A. Lyon·K. M. Itoh·M. S. Brandt
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Abstract

The electron paramagnetic resonance (EPR) linewidths of B acceptors in Si are found to reduce dramatically in isotopically purified 28Si single crystals. Moreover, extremely narrow substructures in the EPR spectra are visible corresponding to either an enhancement or a reduction of the absorbed microwave on resonance. The origin of the substructures is attributed to a combination of simultaneous double excitation and spin relaxation in the four level spin system of the acceptors. A spin population model is developed which qualitatively describes the experimental results.

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H. Tezuka, A. R. Stegner, A. M. Tyryshkin, S. Shankar, M. L. W. Thewalt, S. A. Lyon, K. M. Itoh, M. S. Brandt. 2010-03-23. Electron Paramagnetic Resonance of Boron Acceptors in Isotopically Purified Silicon. https://doi.org/10.1103/physrevb.81.161203

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