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arXiv · 1004.0568

Hysteresis in the magneto-transport of Manganese-doped Germanium: evidence for carrier-mediated ferromagnetism

Shengqiang Zhou·Danilo Buerger·Arndt Muecklich·Christine Baumgart·Wolfgang Skorupa·Carsten Timm·Peter Oesterlin·Manfred Helm·Heidemarie Schmidt
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Abstract

We report the fabrication of Ge:Mn ferromagnetic semiconductors by Mn-ion implantation into Ge followed by pulsed laser annealing. Benefiting from the short time annealing, the hole concentration in Mn-implanted Ge has been increased by two orders of magnitude from 10$^{18}$ to over 10$^{20}$ cm$^{-3}$. Likely due to the high hole concentration, we observe that the longitudinal and Hall resistances exhibit the same hysteresis as the magnetization, which is usually considered as a sign of carrier-mediated ferromagnetism.

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Shengqiang Zhou, Danilo Buerger, Arndt Muecklich, Christine Baumgart, Wolfgang Skorupa, Carsten Timm, Peter Oesterlin, Manfred Helm, Heidemarie Schmidt. 2010-04-05. Hysteresis in the magneto-transport of Manganese-doped Germanium: evidence for carrier-mediated ferromagnetism. https://doi.org/10.1103/physrevb.81.165204

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