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arXiv · 1005.0113

Reversible Fluorination of Graphene: towards a Two-Dimensional Wide Bandgap Semiconductor

S. -H. Cheng·K. Zou·F. Okino·H. R. Gutierrez·A. Gupta·N. Shen·P. C. Eklund·J. O. Sofo·J. Zhu
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Abstract

We report the synthesis and evidence of graphene fluoride, a two-dimensional wide bandgap semiconductor derived from graphene. Graphene fluoride exhibits hexagonal crystalline order and strongly insulating behavior with resistance exceeding 10 G$\Omega$ at room temperature. Electron transport in graphene fluoride is well described by variable-range hopping in two dimensions due to the presence of localized states in the band gap. Graphene obtained through the reduction of graphene fluoride is highly conductive, exhibiting a resistivity of less than 100 k$\Omega$ at room temperature. Our approach provides a new path to reversibly engineer the band structure and conductivity of graphene for electronic and optical applications.

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S. -H. Cheng, K. Zou, F. Okino, H. R. Gutierrez, A. Gupta, N. Shen, P. C. Eklund, J. O. Sofo, J. Zhu. 2010-05-01. Reversible Fluorination of Graphene: towards a Two-Dimensional Wide Bandgap Semiconductor. https://doi.org/10.1103/physrevb.81.205435

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