Fluctuator model of memory dip in hopping insulators

Alexander L. Burin

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arXiv · 1007.1043

Fluctuator model of memory dip in hopping insulators

Alexander L. Burin

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Abstract

We show that the non-equilibrium dynamic in two-dimensional electron glasses close to metal-dielectric transition is dramatically sensitive to electric fields confinement inside the sample, which leads to a nearly thermally activated conductance behavior and a strong non-equilibrium conductance response to the gate voltage, i. e. memory dip in a field dependence of conductance. Theory accounts qualitatively and quantitatively for the universal temperature and field dependencies of memory dip.

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Alexander L. Burin. 2010-07-08. Fluctuator model of memory dip in hopping insulators. https://arxiv.org/abs/1007.1043

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