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arXiv · 1007.2977

Growth of monolayer graphene on 8deg off-axis 4H-SiC (000-1) substrates with application to quantum transport devices

N. Camara·B. Jouault·A. Caboni·B. Jabakhanji·W. Desrat·E. Pausas·C. Consejo·N. Mestres·P. Godignon·J. Camassel
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Abstract

Using high temperature annealing conditions with a graphite cap covering the C-face of an 8deg off-axis 4H-SiC sample, large and homogeneous single epitaxial graphene layers have been grown. Raman spectroscopy shows evidence of the almost free-standing character of these monolayer graphene sheets, which was confirmed by magneto-transport measurements. We find a moderate p-type doping, high carrier mobility and half integer Quantum Hall effect typical of high quality graphene samples. This opens the way to a fully compatible integration of graphene with SiC devices on the wafers that constitute the standard in today's SiC industry.

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N. Camara, B. Jouault, A. Caboni, B. Jabakhanji, W. Desrat, E. Pausas, C. Consejo, N. Mestres, P. Godignon, J. Camassel. 2010-07-18. Growth of monolayer graphene on 8deg off-axis 4H-SiC (000-1) substrates with application to quantum transport devices. https://doi.org/10.1063/1.3480610

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