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arXiv · 1009.4224

Single Color Centers Implanted in Diamond Nanostructures

Birgit J. M. Hausmann·Thomas M. Babinec·Jennifer T. Choy·Jonathan S. Hodges·Sungkun Hong·Irfan Bulu·A. Yacoby·M. D. Lukin·Marko Lončar
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Abstract

The development of materials processing techniques for optical diamond nanostructures containing a single color center is an important problem in quantum science and technology. In this work, we present the combination of ion implantation and top-down diamond nanofabrication in two scenarios: diamond nanopillars and diamond nanowires. The first device consists of a 'shallow' implant (~20nm) to generate Nitrogen-vacancy (NV) color centers near the top surface of the diamond crystal. Individual NV centers are then isolated mechanically by dry etching a regular array of nanopillars in the diamond surface. Photon anti-bunching measurements indicate that a high yield (>10%) of the devices contain a single NV center. The second device demonstrates 'deep' (~1μm) implantation of individual NV centers into pre-fabricated diamond nanowire. The high single photon flux of the nanowire geometry, combined with the low background fluorescence of the ultrapure diamond, allows us to sustain strong photon anti-bunching even at high pump powers.

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Birgit J. M. Hausmann, Thomas M. Babinec, Jennifer T. Choy, Jonathan S. Hodges, Sungkun Hong, Irfan Bulu, A. Yacoby, M. D. Lukin, Marko Lončar. 2010-09-21. Single Color Centers Implanted in Diamond Nanostructures. https://doi.org/10.1088/1367-2630%2F13%2F4%2F045004

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