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arXiv · 1010.1368

Compensation-dependence of magnetic and electrical properties in Ga1-xMnxP

T. E. Winkler·P. R. Stone·Tian Li·K. M. Yu·A. Bonanni·O. D. Dubon
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Abstract

We demonstrate the control of the hole concentration in Ga1-xMnxP over a wide range by introducing compensating vacancies. The resulting evolution of the Curie temperature from 51 K to 7.5 K is remarkably similar to that observed in Ga1-xMnxAs despite the dramatically different character of hole transport between the two material systems. The highly localized nature of holes in Ga1-xMnxP is reflected in the accompanying increase in resistivity by many orders of magnitude. Based on variable-temperature resistivity data we present a general picture for hole conduction in which variable-range hopping is the dominant transport mechanism in the presence of compensation.

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T. E. Winkler, P. R. Stone, Tian Li, K. M. Yu, A. Bonanni, O. D. Dubon. 2010-12-14. Compensation-dependence of magnetic and electrical properties in Ga1-xMnxP. https://doi.org/10.1063/1.3535957

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