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arXiv · 1010.3924

Scanning-gate microscopy of semiconductor nanostructures: an overview

F. Martins·B. Hackens·H. Sellier·P. Liu·M. G. Pala·S. Baltazar·L. Desplanque·X. Wallart·V. Bayot·S. Huant
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Abstract

This paper presents an overview of scanning-gate microscopy applied to the imaging of electron transport through buried semiconductor nanostructures. After a brief description of the technique and of its possible artifacts, we give a summary of some of its most instructive achievements found in the literature and we present an updated review of our own research. It focuses on the imaging of GaInAs-based quantum rings both in the low magnetic field Aharonov-Bohm regime and in the high-field quantum Hall regime. In all of the given examples, we emphasize how a local-probe approach is able to shed new, or complementary, light on transport phenomena which are usually studied by means of macroscopic conductance measurements.

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F. Martins, B. Hackens, H. Sellier, P. Liu, M. G. Pala, S. Baltazar, L. Desplanque, X. Wallart, V. Bayot, S. Huant. 2010-10-19. Scanning-gate microscopy of semiconductor nanostructures: an overview. https://arxiv.org/abs/1010.3924

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