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arXiv · 1011.3307

Anisotropic ultrafast electron dynamics induced by high-field terahertz pulses in n-doped InGaAs

F. Blanchard·D. Golde·F. H. Su·L. Razzari·G. Sharma·R. Morandotti·T. Ozaki·M. Reid·M. Kira·S. W. Koch·F. A. Hegmann
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Abstract

The anisotropic effective mass of electrons is directly measured using time-resolved THz- pump/THz-probe techniques in a n-doped InGaAs semiconductor thin film. A microscopic theory is used to attribute this anisotropy in the THz probe transmission to the nonparabolicity of the conduction band. Self-consistent light-matter coupling is shown to contribute significantly to the THz response.

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F. Blanchard, D. Golde, F. H. Su, L. Razzari, G. Sharma, R. Morandotti, T. Ozaki, M. Reid, M. Kira, S. W. Koch, F. A. Hegmann. 2010-11-15. Anisotropic ultrafast electron dynamics induced by high-field terahertz pulses in n-doped InGaAs. https://arxiv.org/abs/1011.3307

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