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arXiv · 1101.0652

Anomalous Hall effect in field-effect structures of (Ga,Mn)As

D. Chiba·A. Werpachowska·M. Endo·Y. Nishitani·F. Matsukura·T. Dietl·H. Ohno
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Abstract

The anomalous Hall effect in metal-insulator-semiconductor structures having thin (Ga,Mn)As layers as a channel has been studied in a wide range of Mn and hole densities changed by the gate electric field. Strong and unanticipated temperature dependence, including a change of sign, of the anomalous Hall conductance $σ_{xy}$ has been found in samples with the highest Curie temperatures. For more disordered channels, the scaling relation between $σ_{xy}$ and $σ_{xx}$, similar to the one observed previously for thicker samples, is recovered.

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D. Chiba, A. Werpachowska, M. Endo, Y. Nishitani, F. Matsukura, T. Dietl, H. Ohno. 2011-01-08. Anomalous Hall effect in field-effect structures of (Ga,Mn)As. https://doi.org/10.1103/physrevlett.104.106601

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