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arXiv · 1101.5664

Chemical Vapor Deposition Growth of Graphene using Other Hydrocarbon Sources

Zhancheng Li·Ping Wu·Chenxi Wang·Xiaodong Fan·Wenhua Zhang·Xiaofang Zhai·Changgan Zeng·Zhenyu Li·Jinlong Yang·J. G. Hou
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Abstract

Graphene has attracted a lot of research interests due to its exotic properties and a wide spectrum of potential applications. Chemical vapor deposition (CVD) from gaseous hydrocarbon sources has shown great promises for large-scale graphene growth. However, high growth temperature, typically 1000°C, is required for such growth. Here we demonstrate a revised CVD route to grow graphene on Cu foils at low temperature, adopting solid and liquid hydrocarbon feedstocks. For solid PMMA and polystyrene precursors, centimeter-scale monolayer graphene films are synthesized at a growth temperature down to 400°C. When benzene is used as the hydrocarbon source, monolayer graphene flakes with excellent quality are achieved at a growth temperature as low as 300°C. The successful low-temperature growth can be qualitatively understood from the first principles calculations. Our work might pave a way to undemanding route for economical and convenient graphene growth.

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Zhancheng Li, Ping Wu, Chenxi Wang, Xiaodong Fan, Wenhua Zhang, Xiaofang Zhai, Changgan Zeng, Zhenyu Li, Jinlong Yang, J. G. Hou. 2011-02-28. Chemical Vapor Deposition Growth of Graphene using Other Hydrocarbon Sources. https://arxiv.org/abs/1101.5664

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