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arXiv · 1103.0355

Experimental Investigation of Spin Transport Properties in Silicon by Using a Non-local Geometry

Masashi Shiraishi·Yoshiya Honda·Eiji Shikoh·Yoshishige Suzuki·Teruya Shinjo·Tomoyuki Sasaki·Tohru Oikawa·Kiyoshi Noguchi·Toshio Suzuki
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Abstract

A systematic investigation of spin transport properties in silicon at 8 K by using a non-local geometry is presented. The spin injection signal in the non-local scheme is found to increase in proportion to the evolution of bias electric currents. Theoretical fittings using the Hanle-type spin precession signals reveal that the spin polarization of the transported spin in the Si is much less affected by the change in the bias electric current compared with a case of the other spin devices, which induces a unique bias dependence of the spin signals.

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Masashi Shiraishi, Yoshiya Honda, Eiji Shikoh, Yoshishige Suzuki, Teruya Shinjo, Tomoyuki Sasaki, Tohru Oikawa, Kiyoshi Noguchi, Toshio Suzuki. 2011-03-02. Experimental Investigation of Spin Transport Properties in Silicon by Using a Non-local Geometry. https://arxiv.org/abs/1103.0355

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