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arXiv · 1105.0236

Ultra-low threshold, electrically pumped quantum dot photonic crystal nanocavity laser

Bryan Ellis·Marie Mayer·Gary Shambat·Tomas Sarmiento·James Harris·Eugene Haller·Jelena Vuckovic
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Abstract

Efficient, low threshold, and compact semiconductor laser sources are being investigated for many applications in high-speed communications, information processing, and optical interconnects. The best edge-emitting and vertical cavity surface-emitting lasers (VCSELs) have thresholds on the order of 100 \muA[1,2] but dissipate too much power to be practical for many applications, particularly optical interconnects[3]. Optically pumped photonic crystal (PC) nanocavity lasers represent the state of the art in low-threshold lasers[4,5]; however, in order to be practical, techniques to electrically pump these structures must be developed. Here we demonstrate a quantum dot photonic crystal nanocavity laser in gallium arsenide pumped by a lateral p-i-n junction formed by ion implantation. Continuous wave lasing is observed at temperatures up to 150 K. Thresholds of only 181 nA at 50 K and 287 nA at 150 K are observed - the lowest thresholds ever observed in any type of electrically pumped laser.

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Bryan Ellis, Marie Mayer, Gary Shambat, Tomas Sarmiento, James Harris, Eugene Haller, Jelena Vuckovic. 2011-05-02. Ultra-low threshold, electrically pumped quantum dot photonic crystal nanocavity laser. https://doi.org/10.1038/nphoton.2011.51

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