Search arXivSearch

arXiv · 1106.3715

Electric field and tip geometry effects on dielectrophoretic growth of carbon nanotube nanofibrils on scanning probes

Abstract

Single-wall carbon nanotube (SWNT) nanofibrils were assembled onto a variety of conductive scanning probes including atomic force microscope (AFM) tips and scanning tunnelling microscope (STM) needles using positive dielectrophoresis (DEP). The magnitude of the applied electric field was varied in the range of 1-20 V to investigate its effect on the dimensions of the assembled SWNT nanofibrils. Both length and diameter grew asymptotically as voltage increased from 5 to 18 V. Below 4 V, stable attachment of SWNT nanofibrils could not be achieved due to the relatively weak DEP force versus Brownian motion. At voltages of 20 V and higher, low quality nanofibrils resulted from incorporating large amounts of impurities. For intermediate voltages, optimal nanofibrils were achieved, though pivotal to this assembly is the wetting behaviour upon tip immersion in the SWNT suspension drop. This process was monitored in situ to correlate wetting angle and probe geometry (cone angles and tip height), revealing that probes with narrow cone angles and long shanks are optimal. It is proposed that this results from less wetting of the probe apex, and therefore reduces capillary forces and especially force transients during the nanofibril drawing process. Relatively rigid probes (force constant >= 2 N/m) exhibited no perceivable cantilever bending upon wetting and de-wetting, resulting in the most stable process control.

Explore related subjects

Keep this discovery

Explore connections, maps & timelines

BibTeXRIS

Haoyan Wei, Anna Craig, Bryan D Huey, Fotios Papadimitrakopoulos, Harris Marcus. 2011-06-19. Electric field and tip geometry effects on dielectrophoretic growth of carbon nanotube nanofibrils on scanning probes. https://doi.org/10.1088/0957-4484%2F19%2F45%2F455303

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

Uncertainty quantification design principles for machine learning interatomic potentials: lessons learned from hierarchical Bayesian inference

Reliable uncertainty quantification (UQ) remains a major challenge for machine learning interatomic potentials (MLIPs). Here, we benchmark UQ strategies for message passing neural networks such as MACE and Gaussian process (GP)-based interatomic potentials using coupled-cluster reference data for argon as a test case. We develop a hierarchical GP potential combining physics-informed priors with Bayesian propagation of hyperparameter uncertainty that retains useful discrimination of prediction errors while remaining conservative rather than overconfident, with a probabilistic structure that allows the sources of predictive uncertainty to be explicitly dissected. These results expose important distinctions between accuracy, calibration, sharpness, and error discrimination and provide practical design principles for MLIP UQ in uncertainty-critical applications.

cond-mat.mtrl-sci

Bottlenecks in Hamiltonian-Adaptive Resolution Simulation Method for Modeling Interfaces

The Hamiltonian-Adaptive Resolution Simulation (H-AdResS) method allows to combine atomistic and particle-based coarse-grained models in a single simulation box, which makes it very attractive to model systems containing interfaces or reactive regions surrounded by an interacting environment. In our previous work [J. Chem. Inf. Model. (2026) 66 (15): 9215-9225], we implemented H-AdResS in LAMMPS (2 Aug 2023 version) and extended its use to interfaces, focusing on MOF/CO$_2$ interfaces as an example. We found that, despite its advantages, using this method properly for this kind of systems is not trivial. In this work, an in-depth analysis of the impact of the choice of thermostatting schemes and long-range electrostatics models is presented. Even though its Hamiltonian formulation enables performing H-AdResS simulations within constant temperatures ensembles, not every thermostat is appropriate. We demonstrate that Langevin thermostat is a reliable choice for this method, while Nosé-Hoover results in artifacts. In addition, we show that using short-range models such as the Damped Shifted Force method for electrostatics, a popular choice for H-AdResS simulations, can lead to non-physical results when modeling interfaces. The need of capping strategies to deal with discontinuities in forces and energies arising from abrupt changes in resolution is also discussed. Finally, the impossibility of changing the definition of the H-AdResS Hamiltonian to include a gradual interpolation of the bonded degrees of freedom is discussed. We hope that this contribution helps the reader to appropriately set up H-AdResS simulations and to assess if this method can be used to accurately model their system of interest.

cond-mat.mtrl-sci

High-Mobility Ge-Doped $β$-Ga$_2$O$_3$ Growth on Sapphire by Low-Pressure Chemical Vapor Deposition

In this work, high-quality Ge-doped (-201) $β$-Ga$_2$O$_3$ thin films were heteroepitaxially grown on c-plane sapphire substrates with offcut angles of 0 deg, 2 deg, 6 deg, and 8 deg using low-pressure chemical vapor deposition (LPCVD). Increasing sapphire offcut promoted step-flow growth, resulting in improved terrace alignment, reduced surface roughness, and enhanced crystalline quality. Phase-pure monoclinic $β$-Ga$_2$O$_3$ with strong (-201) preferential orientation was confirmed by X-ray diffraction and Raman spectroscopy, while X-ray photoelectron spectroscopy revealed near-stoichiometric composition with an O/Ga ratio of 1.48. Electrical transport properties exhibited a strong dependence on substrate offcut angle, with room-temperature Hall mobility increasing from 15 to 117 cm$^2$/V s as the offcut angle increased from 0 deg to 6 deg, across carrier concentrations spanning $1.43 \times 10^{17}$ to $2.75 \times 10^{18}$ cm$^{-3}$. The 6 deg offcut sample achieved a room-temperature mobility of 117 cm$^2$/V s at a carrier concentration of $1.43 \times 10^{17}$ cm$^{-3}$ and a peak low-temperature mobility of 337 cm$^2$/V s at 128 K with a carrier concentration of $8.96 \times 10^{16}$ cm$^{-3}$, representing the highest reported room-temperature and low-temperature mobilities for Ge-doped $β$-Ga$_2$O$_3$ films grown on sapphire substrates. Carrier concentration and mobility data were analyzed using charge-neutrality and Boltzmann transport models incorporating donor activation together with polar optical phonon, ionized impurity, neutral impurity, acoustic deformation potential, and dislocation scattering mechanisms. The fitting revealed shallow donor activation energies of 12.5-19 meV, a deeper donor level at 80 meV, low acceptor compensation ($< 5 \times 10^{15}$ cm$^{-3}$), and threading dislocation densities on the order of $10^9$ cm$^{-2}$.

cond-mat.mtrl-sci