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arXiv · 1106.6285

Pauli spin blockade in undoped Si/SiGe two-electron double quantum dots

Matthew G. Borselli·Kevin Eng·Edward T. Croke·Brett M. Maune·Biqin Huang·Richard S. Ross·Andrey A. Kiselev·Peter W. Deelman·Ivan Alvarado-Rodriguez·Adele E. Schmitz·Marko Sokolich·Kevin S. Holabird·Thomas M. Hazard·Mark F. Gyure·Andrew T. Hunter
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Abstract

We demonstrate double quantum dots fabricated in undoped Si/SiGe heterostructures relying on a double top-gated design. Charge sensing shows that we can reliably deplete these devices to zero charge occupancy. Measurements and simulations confirm that the energetics are determined by the gate-induced electrostatic potentials. Pauli spin blockade has been observed via transport through the double dot in the two electron configuration, a critical step in performing coherent spin manipulations in Si.

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Matthew G. Borselli, Kevin Eng, Edward T. Croke, Brett M. Maune, Biqin Huang, Richard S. Ross, Andrey A. Kiselev, Peter W. Deelman, Ivan Alvarado-Rodriguez, Adele E. Schmitz, Marko Sokolich, Kevin S. Holabird, Thomas M. Hazard, Mark F. Gyure, Andrew T. Hunter. 2011-06-30. Pauli spin blockade in undoped Si/SiGe two-electron double quantum dots. https://doi.org/10.1063/1.3623479

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