arXiv subjects

Kevin Eng

Publications and source records attributed to Kevin Eng.

12 recordsLinked to original sources

arXiv2026

Stochastic weather generators for high-frequency wind vector time series

Surface winds can vary substantially from one minute to the next, so there is scope for studying its variation on this fine time scale. Restricting to the month of June to minimize seasonality, this work develops a range of machine learning models for generating realistic time series of surface wind vectors at a site in Lamont, Oklahoma based on more than 30 years of high quality measurements at the minute time scale. Such a generator could be used as an input into models from a range of disciplines, notably for wind energy, but also wildfire spread and aviation, among others. The data show complex diurnal structures in both wind speed and direction that would be challenging to capture with standard time series models, so we consider a number of machine learning approaches to producing a stochastic wind generator based on time vector-quantized variational autoencoders. We consider generating a day's worth of data at a time and generating a day of wind vectors conditional on the previous day's winds. We also study methods for incorporating a discrete weather state variable in the generator. We evaluate the generators using a wide range of formal and informal methods. The best of these generators can capture many but not all of the complex features present in the observational data. In particular, the best of our approaches accurately mimic diurnal changes in wind volatility but struggle to match the observed distribution of extreme wind speeds.

stat.AP↗

arXiv2026

A digitally controlled silicon quantum processing unit

Commercially-relevant quantum computers will require large numbers of high-performing qubits that can be manufactured, integrated, and controlled at scale. Silicon exchange-only (EO) qubits are a strong candidate modality due to their control-signal simplicity and compatibility with advanced semiconductor manufacturing, but questions remain around the achievability of sufficiently low noise and a scalable control and wiring solution. Here we introduce a quantum processing unit composed of a custom-designed cryogenic CMOS controller, a novel high-density superconducting ribbon cable, and a low-noise EO qubit device. The quantum chip features a three-rail array of 54 exchange-coupled quantum dots, configurable to host up to 18 EO qubits. We integrate and use these components to demonstrate qubit performance for both single-qubit and entangling operations that advances the EO state of the art by an order of magnitude. We further validate this system by implementing a distance-5 repetition code and a quantum error detecting code then make detailed comparisons with simulations. Our approach facilitates a utility-scale quantum computer with manageable operational and capital requirements.

quant-ph↗

arXiv2025

Two-dimensional Si spin qubit arrays with multilevel interconnects

The promise of quantum computation is contingent upon physical qubits with both low gate error rate and broad scalability. Silicon-based spins are a leading qubit platform, but demonstrations to date have not utilized fabrication processes capable of extending arrays in two dimensions while maintaining complete control of individual spins. Here, we implement an interconnect process, common in semiconductor manufacturing, with multiple back-end-of-line layers to show an extendable two-dimensional array of spins with fully controllable nearest-neighbor exchange interactions. In a device using three interconnect layers, we encode exchange-only qubits and achieve average single-qubit gate fidelities consistent with single-layer devices, including fidelities greater than 99.9%, as measured by blind randomized benchmarking. Moreover, with spin connectivity in two dimensions, we show that both linear and right-angle exchange-only qubits with high performance can be formed, enabling qubit array reconfigurability in the presence of defects. This extendable device platform demonstrates that industrial manufacturing techniques can be leveraged for scalable spin qubit technologies.

quant-ph↗

arXiv2024

dapper: Data Augmentation for Private Posterior Estimation in R

This paper serves as a reference and introduction to using the R package dapper. dapper encodes a sampling framework which allows exact Markov chain Monte Carlo simulation of parameters and latent variables in a statistical model given privatized data. The goal of this package is to fill an urgent need by providing applied researchers with a flexible tool to perform valid Bayesian inference on data protected by differential privacy, allowing them to properly account for the noise introduced for privacy protection in their statistical analysis. dapper offers a significant step forward in providing general-purpose statistical inference tools for privatized data.

stat.CO↗

arXiv2022

Universal logic with encoded spin qubits in silicon

Qubits encoded in a decoherence-free subsystem and realized in exchange-coupled silicon quantum dots are promising candidates for fault-tolerant quantum computing. Benefits of this approach include excellent coherence, low control crosstalk, and configurable insensitivity to certain error sources. Key difficulties are that encoded entangling gates require a large number of control pulses and high-yielding quantum dot arrays. Here we show a device made using the single-layer etch-defined gate electrode architecture that achieves both the required functional yield needed for full control and the coherence necessary for thousands of calibrated exchange pulses to be applied. We measure an average two-qubit Clifford fidelity of $97.1 \pm 0.2\%$ with randomized benchmarking. We also use interleaved randomized benchmarking to demonstrate the controlled-NOT gate with $96.3 \pm 0.7\%$ fidelity, SWAP with $99.3 \pm 0.5\%$ fidelity, and a specialized entangling gate that limits spreading of leakage with $93.8 \pm 0.7\%$ fidelity.

quant-ph↗

arXiv2021

Fast and high-fidelity state preparation and measurement in triple-quantum-dot spin qubits

We demonstrate rapid, high-fidelity state preparation and measurement in exchange-only Si/SiGe triple-quantum-dot qubits. Fast measurement integration ($980$ ns) and initialization ($\approx 300$ ns) operations are performed with all-electrical, baseband control. We emphasize a leakage-sensitive joint initialization and measurement metric, developed in the context of exchange-only qubits but applicable more broadly, and report an infidelity of $2.5\pm0.5\times 10^{-3}$. This result is enabled by a high-valley-splitting heterostructure, initialization at the 2-to-3 electron charge boundary, and careful assessment and mitigation of $T_1$ during spin-to-charge conversion. The ultimate fidelity is limited by a number of comparably-important factors, and we identify clear paths towards further improved fidelity and speed. Along with an observed single-qubit randomized benchmarking error rate of $1.7\times 10^{-3}$, this work demonstrates initialization, control, and measurement of Si/SiGe triple-dot qubits at fidelities and durations which are promising for scalable quantum information processing.

quant-ph↗

arXiv2014

Undoped accumulation-mode Si/SiGe quantum dots

We report on a quantum dot device design that combines the low disorder properties of undoped SiGe heterostructure materials with an overlapping gate stack in which each electrostatic gate has a dominant and unique function -- control of individual quantum dot occupancies and of lateral tunneling into and between dots. Control of the tunneling rate between a dot and an electron bath is demonstrated over more than nine orders of magnitude and independently confirmed by direct measurement within the bandwidth of our amplifiers. The inter-dot tunnel coupling at the (0,2)<-->(1,1) charge configuration anti-crossing is directly measured to quantify the control of a single inter-dot tunnel barrier gate. A simple exponential dependence is sufficient to describe each of these tunneling processes as a function of the controlling gate voltage.

cond-mat.mes-hall↗

arXiv2011

Spatial distribution of electrons on a superfluid helium charge-coupled device

Electrons floating on the surface of superfluid helium have been suggested as promising mobile spin qubits. Three micron wide channels fabricated with standard silicon processing are filled with superfluid helium by capillary action. Photoemitted electrons are held by voltages applied to underlying gates. The gates are connected as a 3-phase charge-coupled device (CCD). Starting with approximately one electron per channel, no detectable transfer errors occur while clocking $10^9$ pixels. One channel with its associated gates is perpendicular to the other 120, providing a CCD which can transfer electrons between the others. This perpendicular channel has not only shown efficient electron transport but also serves as a way to measure the uniformity of the electron occupancy in the 120 parallel channels.

cond-mat.mes-hall↗

arXiv2011

Triangulating tunneling resonances in a point contact

We observe resonant tunneling in silicon split gate point contacts implanted with antimony and defined in a self-aligned poly-silicon double gate enhancement mode Si-MOS device structure. We identify which resonances are likely candidates for transport through the antimony donor as opposed to unintentional disorder induced potentials using capacitance triangulation. We determine the capacitances from the resonant feature to each of the conducting gates and the source/drain two dimensional electron gas regions. In our device geometry, these capacitances provide information about the resonance location in three dimensions. Semi-classical electrostatic simulations of capacitance, already used to map quantum dot size and position, identify a combination of location and confinement potential size that satisfy our experimental observations. The sensitivity of simulation to position and size allow us to triangulate possible locations of the resonant level with nanometer resolution. We discuss our results and how they may apply to resonant tunneling through a single donor.

cond-mat.mes-hall↗

arXiv2011

Extremely efficient clocked electron transfer on superfluid helium

Unprecedented transport efficiency is demonstrated for electrons on the surface of micron-scale superfluid helium filled channels by co-opting silicon processing technology to construct the equivalent of a charge-coupled device (CCD). Strong fringing fields lead to undetectably rare transfer failures after over a billion cycles in two dimensions. This extremely efficient transport is measured in 120 channels simultaneously with packets of up to 20 electrons, and down to singly occupied pixels. These results point the way towards the large scale transport of either computational qubits or electron spin qubits used for communications in a hybrid qubit system.

cond-mat.other↗

arXiv2011

Pauli spin blockade in undoped Si/SiGe two-electron double quantum dots

We demonstrate double quantum dots fabricated in undoped Si/SiGe heterostructures relying on a double top-gated design. Charge sensing shows that we can reliably deplete these devices to zero charge occupancy. Measurements and simulations confirm that the energetics are determined by the gate-induced electrostatic potentials. Pauli spin blockade has been observed via transport through the double dot in the two electron configuration, a critical step in performing coherent spin manipulations in Si.

cond-mat.mes-hall↗

arXiv2002

Effects of a Parallel Magnetic Field on the Metal-Insulator Transition in a Dilute Two-Dimensional Electron System

The temperature dependence of conductivity $σ(T)$ of a two-dimensional electron system in silicon has been studied in parallel magnetic fields B. At B=0, the system displays a metal-insulator transition at a critical electron density $n_c(0)$, and $dσ/dT >0$ in the metallic phase. At low fields ($B\lesssim 2$ T), $n_c$ increases as $n_c(B) - n_c(0) \propto B^β$ ($β\sim 1$), and the zero-temperature conductivity scales as $σ(n_s,B,T=0)/σ(n_s,0,0)=f(B^β/δ_n)$ (where $δ_n=(n_s-n_c(0))/n_c(0)$, and $n_s$ is electron density) as expected for a quantum phase transition. The metallic phase persists in fields of up to 18 T, consistent with the saturation of $n_c$ at high fields.

cond-mat.str-el↗