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arXiv · 1107.4769

Doping of epitaxial graphene on SiC intercalated with hydrogen and its magneto-oscillations

S. Kopylov·V. I. Fal'ko·Th. Seyller
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Abstract

We study the charge transfer between a quasi-free-standing monolayer graphene, produced by hydrogen intercalation, and surface acceptor states. We consider two models of acceptor density of states to explain the high hole densities observed in graphene and find the density responsivity to the gate voltage. By studying magneto-oscillations of the carrier density we provide an experimental way to determine the relevant model.

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S. Kopylov, V. I. Fal'ko, Th. Seyller. 2011-07-24. Doping of epitaxial graphene on SiC intercalated with hydrogen and its magneto-oscillations. https://arxiv.org/abs/1107.4769

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